SEMICONDUCTOR
TECHNICAL DATA
For EMI Filtering and ESD Protection.
PF1010DF8
Silicon Planar Type Diode
F
E
4
FEATURES
EMI/RFI filtering.
ESD Protection to IEC 61000-4-2 Level 4.
Low insertion loss.
Good attenuation of high frequency signals.
Low clamping voltage.
Low operating and leakage current.
Four elements in one package
D
B
A
G
1
H
GND PAD
I
8
5
H
Top View
DIM
A
B
C
D
E
F
G
H
I
Bottom View
MILLIMETERS
_
2.0
+
0.05
_
2.0
+
0.05
_
0.75
+
0.05
_
0.2
+
0.02
0.5
_
0.23
+
0.05
_
0.35
+
0.05
_
0.05
1.2
+
_
0.6
+
0.05
C
APPLICATIONS
Cell phone handsets.
RF communications equipment.
Side View
1,8 : Filter channel 1
2,7 : Filter channel 2
3,6 : Filter channel 3
4,5 : Filter channel 4
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Power Dissipation
Operating Temperature
Storage Temperature
)
SYMBOL
P
D
T
j
T
stg
RATING
300
-55 150
-55 150
UNIT
mW
DFN-8
EQUIVALENT CIRCUIT
FILTERn*
100Ω
FILTERn*
10pF
10pF
GND
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Cutoff Frequency
Attenuation Frequency
Resistance
Capacitance
SYMBOL
V
RWM
V
BR
I
R
f
3dB
f
25dB
R
C
)
TEST CONDITION
-
I
t
=1mA
V
RWM
=3V
V
R
=0V, Z
SOURCE
=50 , Z
LOAD
=50
V
R
=0V, Z
SOURCE
=50 , Z
LOAD
=50
Between Input and Output
V
R
=2.5V, Between I/O Pins and GND
MIN.
-
6
-
-
800
-
-
TYP.
-
-
-
150
-
100
20
MAX.
5
-
0.1
-
3,000
-
-
pF
UNIT
V
V
A
MHz
MHz
2006. 8. 8
Revision No : 2
1/2
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