SEMICONDUCTOR
TECHNICAL DATA
EMI Filtering TVS For Wireless Headsets.
PF0165UDF8
EMI Filtering TVS
TENTATIVE
A
1
FEATURES
EMI/RFI filtering.
ESD Protection to IEC 61000-4-2 Level 4.
Low insertion loss.
Pin 1
C
E
4
B
Good attenuation of high frequency signals.
Low clamping voltage.
Low operating and leakage current.
TOP VIEW
F
GND PAD
8
D
5
BOTTEM VIEW
K
J
L
SIDE VIEW
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Power Dissipation
Junction Temperature
Storage Temperature
* Total Package Power Dissipation
)
SYMBOL
*P
D
T
j
T
stg
RATING
400
150
-55 150
UNIT
mW
1,8 : Filter channel 1
2,7 : Filter channel 2
3,6 : Filter channel 3
4,5 : Filter channel 4
DIM
A
B
C
D
E
F
G
H
J
K
L
MILLIMETERS
1.80
1.20
_
1.00
+
0.10
_
0.20
+
0.05
0.40
_
0.30
+
0.10
_
0.25
+
0.05
0.20 Min
_
0.50
+
0.05
0.125
0.03+0.02/-0.03
UDFN-8
EQUIVALENT CIRCUIT
10Ω
MARKING
Type Name
FILTERn*
FILTERn*
65pF
65pF
T4
0 A
Lot No.
GND
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Resistance
Capacitance
C
2.5V
SYMBOL
V
RWM
V
BR
I
R
R
C
0V
)
TEST CONDITION
-
I
t
=1mA
V
RWM
=3.3V
Between Input and Output
V
R
=0V, Between I/O Pins and GND
V
R
=2.5V, Between I/O Pins and GND
MIN.
-
6
-
-
-
-
TYP.
-
-
-
10
200
130
MAX.
5
-
0.5
-
-
pF
-
UNIT
V
V
A
2007. 1. 8
Revision No : 0
H
G
1/1
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