SEMICONDUCTOR
TECHNICAL DATA
HIGH CURRENT APPLICATION.
FEATURE
・Complementary
to MPS8550.
B
MPS8050
EPITAXIAL PLANAR NPN TRANSISTOR
C
A
N
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
*Cu Lead-Frame : 625mW
Fe Lead-Frame : 400mW
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
C
*
T
j
T
stg
RATING
40
25
6
1.5
625
mW
400
150
-55½150
℃
℃
UNIT
V
V
V
A
L
K
D
G
E
H
F
F
M
1
2
3
C
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
MILLIMETERS
4.70 MAX
4.80 MAX
3.70 MAX
0.45
1.00
1.27
0.85
0.45
_
14.00 + 0.50
0.55 MAX
2.30
0.45 MAX
1.00
J
1. EMITTER
2. BASE
3. COLLECTOR
TO-92
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
SYMBOL
I
CBO
I
EBO
V
(BR)CBO
V
(BR)CEO
h
FE
(1)
DC Current Gain
h
FE
(2) (Note)
h
FE
(3)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
Collector Output Capacitance
Note : h
FE
(2) Classification
V
CE(sat)
V
BE(sat)
V
BE
f
T
C
ob
TEST CONDITION
V
CB
=35V, I
E
=0
V
EB
=6V, I
C
=0
I
C
=100μ I
E
=0
A,
I
C
=2mA, I
B
=0
V
CE
=1V, I
C
=5mA
V
CE
=1V, I
C
=100mA
V
CE
=1V, I
C
=800mA
I
C
=800mA, I
B
=80mA
I
C
=800mA, I
B
=80mA
V
CE
=1V, I
C
=10mA
V
CE
=10V, I
C
=50mA
V
CB
=10V, f=1MHz, I
E
=0
MIN.
-
-
40
25
45
85
40
-
-
-
100
-
TYP.
-
-
-
-
135
160
110
0.28
0.98
0.66
190
9
MAX.
100
100
-
-
-
300
-
0.5
1.2
1.0
-
-
V
V
V
MHz
pF
UNIT
nA
nA
V
V
B:85½160 , C : 120½200 , D : 160½300
2010. 6. 10
Revision No : 3
1/2
测试/测量
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