Operating Temperature Range .......................... -40NC to +85NC
Storage Temperature Range............................ -65NC to +150NC
Junction Temperature .....................................................+150NC
Lead Temperature (soldering, 10s) ................................+300NC
Soldering Temperature (reflow) ......................................+260NC
Note 1:
Signals on SEL_, NO_, NC_, or COM_ exceeding V
CC
, V
DD
, or V
GND
are clamped by internal diodes. Limit forward-diode
current to maximum current rating.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
(V
CC
= +3.0V to +5.5V, V
DD
= +3.0V to +3.6V, T
A
= -40NC to +85NC, unless otherwise noted. Typical values are at V
CC
= V
DD
= +3.3V,
T
A
= +25NC.) (Note 2)
PARAMETER
Power-Supply Range
Supply Current
Shutdown Supply Current, I
CC
Increase in Supply Current, I
CC
,
with V
SEL1
, V
EN
Voltage
V
COM_
,
V
NO_
,
V
NC_
V
FP
SYMBOL
V
CC
V
DD
I
CC
I
DD
I
SHDN
V
SEL1
= 0V or V
CC
, V
EN
= 0V V
CC
= 3.0V
V
SEL2
= 0V or V
DD
V
DD
= 3.3V
0.1
Hi-Speed USB switches, switch disabled
(V
EN
= V
CC
)
Hi-Speed USB switches, 0V
P
V
SEL1
P
V
IL
or V
IH
P
V
SEL1
P
V
CC
or 0V
P
V
EN
P
V
IL
or
V
IH
P
V
EN
P
V
CC
Hi-Speed USB switches, V
EN
= 0V
(Note 3)
SuperSpeed USB switches
Hi-Speed USB switches, COMD_ only,
T
A
= +25NC
Hi-Speed USB switches,
V
COMD_
= 0V to V
CC
On-Resistance
R
ON
Hi-Speed USB switches, V
CC
= 3.0V,
V
COMD_
= 3.6V
SuperSpeed USB switches, V
DD
= 3.0V,
I
COM_
= 15mA, V
NO_
= V
NC_
= 0V, 1.8V
0
-0.3
V
CC
+
0.6
V
CC
+
0.8
5
5.5
7
CONDITIONS
MIN
3.0
3.0
0.6
TYP
MAX
5.5
3.6
1.5
60
UNITS
V
FA
FA
1
FA
V
CC
V
DD
-
1.2
V
CC
+1
10
I
V
Analog Signal Range
Fault-Protection Trip Threshold
V
2
SuperSpeed USB Passive Switch
(Low/Full/Hi/SuperSpeed)
ELECTRICAL CHARACTERISTICS (continued)
(V
CC
= +3.0V to +5.5V, V
DD
= +3.0V to +3.6V, T
A
= -40NC to +85NC, unless otherwise noted. Typical values are at V
CC
= V
DD
= +3.3V,
T
A
= +25NC.) (Note 2)
PARAMETER
SYMBOL
CONDITIONS
Hi-Speed USB switches, V
CC
= 3.0V,
V
COMD_
= 2.0V (Notes 4, 5)
DR
ON
SuperSpeed USB switches, V
DD
= 3.0V,
I
COM_
= 15mA, V
NO_
or V
NC_
= 0V
(Notes 4, 5)
SuperSpeed USB switches, V
DD
= 3.0V,
I
COM_
= 15mA, V
NO_
or V
NC_
= 0V
(Notes 4, 5)
Hi-Speed USB switches, V
CC
= 3.0V,
V
COMD_
= 0V to V
CC
(Note 6)
On-Resistance Flatness
R
FLAT
SuperSpeed USB switches, V
DD
= 3.0V,
I
COM_
= 15mA, V
NO_
or V
NC_
= 0V
(Notes 5, 6)
Hi-Speed USB switches, V
CC
= 5.5V,
V
COMD_
= 0V or 5.5V, V
NOD_
,
V
NCD_
= 5.5V or 0V
SuperSpeed USB switches, V
DD
= 3.6V,
V
COM_
= 0V, 1.8V; V
NO_
or V
NC_
= 1.8V,
0V
Hi-Speed USB switches, V
CC
= 5.5V,
V
COMD_
= 0V or 5.5V, V
NOD_
,
V
NCD_
= unconnected
SuperSpeed USB switches, V
DD
= 3.6V,
V
COM_
= 0V, 1.8V; V
NO_
or V
NC_
= V
COM_
or unconnected
Hi-Speed USB switches, R
L
= R
S
= 50I,
signal = 0dBm
SuperSpeed USB
switches, R
L
= R
S
= 50I,
unbalanced
Hi-Speed USB switches,
V
NOD_
, V
NCD_
= 0dBm,
R
L
= R
S
= 50I, Figure 1
SuperSpeed USB
switches, signal = 0dBm,
R
S
= R
L
= 50I
1MHz < f <
100MHz
500MHz < f <
1.25GHz
f = 10MHz
f = 250MHz
f = 500MHz
f = 10MHz
f = 1.25GHz
-250
MIN
TYP
0.1
MAX
1
I
0.6
2
UNITS
MAX14978
On-Resistance Match Between
Channels
On-Resistance Match Between
Pairs of Same Channels
DR
ON
0.1
1
I
0.1
I
0.06
2
+250
nA
Off-Leakage Current
I
COM(OFF)
-1
+1
FA
-250
+250
nA
On-Leakage Current
I
COM(ON)
-1
+1
FA
AC PERFORMANCE
On-Channel -3dB Bandwidth
BW
950
-0.5
dB
-1.4
-48
-20
-17
-56
-26
dB
MHz
On-Loss
G
LOSS
Off-Isolation
V
ISO
3
SuperSpeed USB Passive Switch
(Low/Full/Hi/SuperSpeed)
MAX14978
ELECTRICAL CHARACTERISTICS (continued)
(V
CC
= +3.0V to +5.5V, V
DD
= +3.0V to +3.6V, T
A
= -40NC to +85NC, unless otherwise noted. Typical values are at V
CC
= V
DD
= +3.3V,
T
A
= +25NC.) (Note 2)
PARAMETER
SYMBOL
CONDITIONS
Hi-Speed USB switches,
V
NOD_
, V
NCD_
= 0dBm,
R
L
= R
S
= 50I, Figure 1
Crosstalk (Note 7)
V
CT
SuperSpeed USB switch-
es, crosstalk between any
two pairs,
R
S
= R
L
= 50I, unbal-
anced, Figure 1
f = 10MHz
f = 250MHz
f = 500MHz
f = 50MHz
f = 1.25GHz
MIN
TYP
-73
-54
-33
-53
-32
5.0
1.4
0.5
Hi-Speed USB switches
Input Leakage Current
Input Logic Hysteresis
DYNAMIC PERFORMANCE
Hi-Speed USB switches,
V
NOD
_ or V
NCD_
= 1.5V, R
L
= 300I,
C
L
= 35pF, V
EN
= V
CC
to 0V, Figure 2
SuperSpeed USB switches,
V
NO_
or V
NC_
= 1.0V, R
L
= 50I, Figure 2
V
NOD_
or V
NCD_
= 1.5V, R
L
= 300I,
C
L
= 35pF, V
EN
= 0V to V
CC
, Figure 2
SuperSpeed USB switches,
V
NO_
or V
NC_
= 1.0V, R
L
= 50I, Figure 2
Hi-Speed USB switches, R
L
= R
S
= 50I,
Figure 3
SuperSpeed USB switches, R
L
= R
S
= 50I
Output Skew Between Switches
t
SK
Hi-Speed USB switches, skew between
switch 1 and 2, R
L
= R
S
= 50I, Figure 3
SuperSpeed USB switches, R
S
= R
L
= 50I,
unbalanced; skew between any two pairs,
Figure 3
SuperSpeed USB switches, R
S
= R
L
= 50I,
unbalanced; skew between two lines on
same pair, Figure 3
Hi-Speed USB switches,
V
COMD_ =
0V to 5V step, R
L
= R
S
= 50I,
V
CC
= 3.3V, Figure 4
0.5
20
100
Fs
I
IN
V
HYST
SuperSpeed USB switches,
V
SEL2
= 0V or V
DD
SuperSpeed USB switches
-250
-1
100
+250
+1
Gbps
V
V
nA
FA
mV
dB
MAX
UNITS
Signaling Data Rate
LOGIC INPUT
Input Logic-High
Input Logic-Low
BR
V
IH
V
IL
SuperSpeed USB switches, R
S
= R
L
= 50I
Turn-On Time
t
ON
90
1
10
100
50
40
250
5
50
ns
Fs
ns
Turn-Off Time
t
OFF
Propagation Delay
t
PLH
, t
PHL
ps
ps
Output Skew Between Pairs
t
SK1
50
ps
Output Skew Between Same Pair
t
SK2
10
ps
Fault-Protection Response Time
t
FP
5.0
Fs
4
SuperSpeed USB Passive Switch
(Low/Full/Hi/SuperSpeed)
ELECTRICAL CHARACTERISTICS (continued)
(V
CC
= +3.0V to +5.5V, V
DD
= +3.0V to +3.6V, T
A
= -40NC to +85NC, unless otherwise noted. Typical values are at V
CC
= V
DD
= +3.3V,
T
A
= +25NC.) (Note 2)
PARAMETER
SYMBOL
CONDITIONS
Hi-Speed USB switches, V
COMD_
= 5V
to 0V step, R
L
= R
S
= 50I, V
CC
= 3.3V,
Figure 4
Hi-Speed USB switches, f = 1MHz,
Figure 5
SuperSpeed USB switches, Figure 5
Hi-Speed USB switches, f = 1MHz,
Figure 5
Hi-Speed USB switches, f = 240MHz,
Figure 5
Hi-Speed USB switches, f = 1MHz,
Figure 5
COM_ On-Capacitance
C
COM(ON)
Hi-Speed USB switches, f = 240MHz,
Figure 5
SuperSpeed USB switches, Figure 5
Total Harmonic Distortion Plus
Noise
ESD PROTECTION
Human Body Model
COMD+, COMD-
COM0_, COM1_
All Pins
Note
Note
Note
Note
Note
2:
3:
4:
5:
6:
IEC 61000-4-2 Air Gap Discharge
IEC 61000-4-2 Contact Discharge
Human Body Model
Human Body Model
±15
±15
±8
±6
±2
kV
kV
kV
THD+N
Hi-Speed USB switches, V
COMD
_ = 1V
P-P
,
V
BIAS
= 1V, R
L
= R
S
= 50I,
f = 20Hz to 20kHz
2
1
5.5
pF
4.8
6.5
5.5
2
0.03
%
pF
MIN
TYP
MAX
UNITS
MAX14978
Fault-Protection Recovery Time
t
FPR
100
Fs
NO_ or NC_ Off-Capacitance
C
NO(OFF)
or
C
NC(OFF)
pF
COM_ Off-Capacitance
C
COM(OFF)
All devices are 100% production tested at T
A
= +25NC. All temperature limits are guaranteed by design.
The switch turns off for voltages above V
FP
, protecting downstream circuits in case of a fault condition.
DR
ON(MAX)
= |R
ON(CH1)
- R
ON(CH2)
|.
Guaranteed by design. Not production tested.
Flatness is defined as the difference between the maximum and minimum value of on-resistance, as measured over spec-
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