SID9575
Elektronische Bauelemente
-15A , -60V , R
DS(ON)
90 mΩ
Ω
P-Channel Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen-free
DESCRIPTION
The SID9575 provide the designer with the best
combination of fast switching, ruggedized device
design, low on-resistance and cost-effectiveness.
TO-251
FEATURES
Simple Drive Requirement
Lower On-resistance
Fast Switching Characteristic
A
B
C
D
APPLICATION
The through-hole version (TO-251) is available for
low-profile applications and suited for low voltage
applications such as DC / DC converters.
2
K
GE
F
H
MARKING:
9575
Date code
Drain
M
J
P
1
Gate
REF.
A
B
C
D
E
F
3
Source
Millimeter
Min.
Max.
6.40
6.80
5.20
5.50
2.20
2.40
0.45
0.55
6.80
7.20
7.20
7.80
REF.
G
H
J
K
M
P
Millimeter
Min.
Max.
5.40
5.80
0.90
1.50
2.30
0.60
0.90
0.50
0.70
0.45
0.60
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
1
Symbol
V
DS
V
GS
Ratings
-60
±25
-15
Unit
V
V
A
A
A
W
°C
/ W
°C
/ W
W /
°C
°C
V
GS
=10V, T
C
=25°C
V
GS
=10V, T
C
=100°C
I
D
I
DM
P
D
R
θJC
R
θJA
-9.5
-45
36
3.5
110
0.29
Total Power Dissipation @ T
C
= 25°C
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Linear Derating Factor
Operating Junction & Storage temperature
T
J
, T
STG
-55~150
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
12-May-2011 Rev. B
Page 1 of 4
SID9575
Elektronische Bauelemente
-15A , -60V , R
DS(ON)
90 mΩ
Ω
P-Channel Enhancement Mode Power MOSFET
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Breakdown
Coefficient
Voltage
Temperature
Symbol
BV
DSS
∆BV
DSS
/
∆T
J
V
GS(th)
g
fs
I
GSS
I
DSS
Min
-60
-
-1
-
-
-
-
-
-
Typ
-
-0.06
-
14
-
-
-
-
-
17
5
6
10
19
46
53
1660
160
100
Max
-
-
-3
-
±100
-1
-25
90
120
27
-
-
-
-
-
-
2660
-
-
Unit
V
V/°
C
V
S
nA
uA
Test Conditions
V
GS
=0, I
D
= -250µA
Reference to 25° I
D
= -1mA
C,
V
DS
=V
GS
, I
D
= -250
µA
V
DS
= -10V, I
D
= -9A
V
GS
= ±25V
V
DS
= -60 V, V
GS
=0
V
DS
= -48 V, V
GS
=0
V
GS
= -10 V, I
D
= -12A
V
GS
= -4.5 V, I
D
= -9 A
I
D
= -9 A
V
DS
= -48 V
V
GS
= -4.5 V
V
DS
= -30 V
I
D
= -9 A
V
GS
= -10 V
R
G
=3.3
Ω
R
D
=3.3
Ω
V
GS
=0
V
DS
= -25V
f =1 MHz
Gate Threshold Voltage
Forward Trans-conductance
Gate-Source Leakage Current
Drain-Source
Current
Leakage T
J
=25℃
T
J
=150℃
2
Static Drain-Source On-Resistance
Total Gate Charge
2
R
DS(ON)
Q
g
Q
gs
Q
gd
T
d(on)
T
r
T
d(off)
T
f
C
iss
C
oss
C
rss
m
-
-
-
-
-
-
-
-
-
-
Gate-Source Charge
Gate-Drain (“Miller”) Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
2
nC
nS
pF
Source-Drain Diode
Forward On Voltage
2
2
V
SD
T
rr
Q
rr
-
-
-
-
56
159
-1.2
-
-
V
nS
nC
I
S
= -9A, V
GS
=0
I
S
= -9 A, V
GS
=0
dl/dt=100A /
µs
Reverse Recovery Time
Reverse Recovery Charge
Notes:
1. Pulse width limited by safe operating area.
2. Pulse width≦300us, duty cycle≦2%
.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
12-May-2011 Rev. B
Page 2 of 4
SID9575
Elektronische Bauelemente
-15A , -60V , R
DS(ON)
90 mΩ
Ω
P-Channel Enhancement Mode Power MOSFET
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
12-May-2011 Rev. B
Page 3 of 4
SID9575
Elektronische Bauelemente
-15A , -60V , R
DS(ON)
90 mΩ
Ω
P-Channel Enhancement Mode Power MOSFET
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
12-May-2011 Rev. B
Page 4 of 4
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