SID3055
Elektronische Bauelemente
15A, 30V,R
DS(ON)
80m
Ω
N-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
TO-251
6.6
±0.2
5.3
±0.2
2.3
±0.1
0.5
±0.05
Description
The TO-251 is universally preferred for all commercial-industrial
surface mount applications and
suited for low voltage applications
5.6
±0.2
7.0
±0.2
such as DC/DC converters.
7.0
±0.2
1.2
±0.3
0.75
±0.15
0.6
±0.1
2.3
REF.
0.5
±0.1
G
D
S
Dimensions in millimeters
D
G
Marking Code: 3055
XXXX(Date Code)
S
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current,V
GS
@10V
Continuous Drain Current,V
GS
@10V
Pulsed Drain Current
1
Symbol
V
DS
V
GS
I
D
@T
C
=25
C
I
D
@T
C
=100
C
I
DM
P
D
@T
C
=25
C
o
o
o
Ratings
30
± 20
15
9
50
28
0.22
Unit
V
V
A
A
A
W
W/ C
o
o
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Tj, Tstg
-55~+150
C
Thermal Data
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Symbol
Max.
Max.
Rthj-c
Rthj-a
Ratings
4.5
62
o
o
Unit
C /W
C /W
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of
6
SID3055
Elektronische Bauelemente
15A, 30V,R
DS(ON)
80m
Ω
N-Channel Enhancement Mode Power Mos.FET
Electrical Characteristics( Tj=25 C Unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source Leakage Current (Tj=25
C
)
Drain-Source Leakage Current(Tj=150
C
)
Static Drain-Source On-Resistance
o
o
o
Symbol
BV
DSS
BV
DS
/ Tj
V
GS(th)
I
GSS
I
DSS
Min.
30
_
Typ.
_
Max.
_
Unit
V
V/ C
V
nA
uA
uA
o
Test Condition
V
GS
=0V, I
D
=250uA
Reference to 25 C, I
D
=1mA
V
DS
=V
GS,
I
D
=250uA
V
GS
=
±
20V
V
DS
=30V,V
GS
=0
V
DS
=24V,V
GS
=0
V
GS
=10V, I
D
=28A
V
GS
=4.5V, I
D
=22A
o
0.037
_
_
_
_
_
1.0
_
_
_
_
3.0
±
100
25
250
16.5
25
_
_
_
R
D S (O N )
Qg
Qgs
Qgd
Td
(ON)
Tr
Td
(Off)
Tf
Ciss
Coss
Crss
14.5
21.5
5.4
1.3
3.6
3.6
19.8
13
3.2
260
144
13
_
_
_
_
_
_
_
_
_
_
_
m
Ω
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
nC
I
D
=8 A
V
DS
=24V
V
GS
= 5V
_
_
_
_
V
DD
=15V
I
D
=8A
nS
V
GS
=10V
R
G
=3.4
Ω
R
D
=1.9
Ω
_
_
_
pF
V
GS
=0V
V
DS
=25V
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage
2
Continuous Source Current(Body Diode)
Pulsed Source Current(Body Diode)
1
Symbol
V
SD
I
S
Min.
_
_
Typ.
_
_
_
Max.
1.3
Unit
V
A
A
Test Condition
I
S
=15 A, V
GS
=0V.Tj=25C
V
D
=V
G
=0V,V
S
=1.3 V
o
15
50
I
SM
_
Notes: 1.Pulse width limited by safe operating area.
2. Pulse width
≦
300us, dutycycle
≦
2%.
http://www.SeCoSGmbH.com/
01
-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page
2
of
6
SID3055
Elektronische Bauelemente
15A, 30V,R
DS(ON)
80m
Ω
N-Channel Enhancement Mode Power Mos.FET
Characteristics Curve
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page
3
of
6
SID3055
Elektronische Bauelemente
15A, 30V,R
DS(ON)
80m
Ω
N-Channel Enhancement Mode Power Mos.FET
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page
4
of
6
SID3055
Elektronische Bauelemente
15A, 30V,R
DS(ON)
80m
Ω
N-Channel Enhancement Mode Power Mos.FET
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page
5
of
6
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
