SEMiX302GB066HDs
Absolute Maximum Ratings
Symbol
IGBT
V
CES
I
C
I
Cnom
I
CRM
I
CRM
= 2xI
Cnom
V
CC
= 360 V
V
GE
≤
15 V
T
j
= 150 °C
V
CES
≤
600 V
V
GES
t
psc
T
j
= 175 °C
T
c
= 25 °C
T
c
= 80 °C
600
379
286
300
600
-20 ... 20
6
-40 ... 175
T
c
= 25 °C
T
c
= 80 °C
419
307
300
I
FRM
= 2xI
Fnom
t
p
= 10 ms, sin 180°, T
j
= 25 °C
600
1400
-40 ... 175
600
-40 ... 125
AC sinus 50Hz, t = 1 min
4000
V
A
A
A
A
V
µs
°C
A
A
A
A
A
°C
A
°C
V
Conditions
Values
Unit
SEMiX 2s
Trench IGBT Modules
SEMiX302GB066HDs
T
j
®
Inverse diode
I
F
I
Fnom
T
j
= 175 °C
Features
• Homogeneous Si
• Trench = Trenchgate technology
• V
CE(sat)
with positive temperature
coefficient
• UL recognised file no. E63532
I
FRM
I
FSM
T
j
Module
I
t(RMS)
T
stg
V
isol
Typical Applications*
• Matrix Converter
• Resonant Inverter
• Current Source Inverter
Characteristics
Symbol
IGBT
V
CE(sat)
V
CE0
r
CE
V
GE(th)
I
CES
C
ies
C
oes
C
res
Q
G
R
Gint
t
d(on)
t
r
E
on
t
d(off)
t
f
E
off
R
th(j-c)
per IGBT
I
C
= 300 A
V
GE
= 15 V
chiplevel
T
j
= 25 °C
T
j
= 150 °C
T
j
= 25 °C
T
j
= 150 °C
V
GE
= 15 V
T
j
= 25 °C
T
j
= 150 °C
5
T
j
= 25 °C
T
j
= 150 °C
f = 1 MHz
f = 1 MHz
f = 1 MHz
18.5
1.15
0.55
2400
1.00
110
85
11.5
820
70
15
0.16
1.45
1.7
0.9
0.85
1.8
2.8
5.8
0.15
1.85
2.1
1
0.9
2.8
4.0
6.5
0.45
V
V
V
V
mΩ
mΩ
V
mA
mA
nF
nF
nF
nC
Ω
ns
ns
mJ
ns
ns
mJ
K/W
Conditions
min.
typ.
max.
Unit
Remarks
• Case temperature limited to T
C
=125°C
max.
• Product reliability results are valid for
T
j
=150°C
• For short circuit: Soft R
Goff
recommended
• Take care of over-voltage caused by
stray inductance
V
GE
=V
CE
, I
C
= 4.8 mA
V
GE
= 0 V
V
CE
= 600 V
V
CE
= 25 V
V
GE
= 0 V
V
GE
= - 8 V...+ 15 V
T
j
= 25 °C
V
CC
= 300 V
I
C
= 300 A
T
j
= 150 °C
R
G on
= 5.1
Ω
R
G off
= 5.1
Ω
GB
© by SEMIKRON
Rev. 0 – 16.04.2010
1
SEMiX302GB066HDs
Characteristics
Symbol
Conditions
T
j
= 25 °C
T
j
= 150 °C
T
j
= 25 °C
T
j
= 150 °C
r
F
T
j
= 25 °C
T
j
= 150 °C
I
RRM
Q
rr
E
rr
R
th(j-c)
Module
L
CE
R
CC'+EE'
res., terminal-chip
per module
to heat sink (M5)
to terminals (M6)
3
2.5
T
C
= 25 °C
T
C
= 125 °C
18
0.7
1
0.045
5
5
250
T
c
=100°C (R
25
=5 kΩ)
R
(T)
=R
100
exp[B
100/125
(1/T-1/T
100
)];
T[K];
493 ± 5%
3550
±2%
nH
mΩ
mΩ
K/W
Nm
Nm
g
Ω
K
I
F
= 300 A
T
j
= 150 °C
di/dt
off
= 3600 A/µs T = 150 °C
j
V
GE
= -8 V
T
j
= 150 °C
V
CC
= 300 V
per diode
0.9
0.75
1.0
1.5
min.
typ.
1.4
1.4
1
0.85
1.3
1.8
240
35
7.5
max.
1.60
1.6
1.1
0.95
1.7
2.2
Unit
V
V
V
V
mΩ
mΩ
A
µC
mJ
Inverse diode
V
F
= V
EC
I
F
= 300 A
V
GE
= 0 V
chip
V
F0
SEMiX
®
2s
Trench IGBT Modules
SEMiX302GB066HDs
0.19
K/W
Features
• Homogeneous Si
• Trench = Trenchgate technology
• V
CE(sat)
with positive temperature
coefficient
• UL recognised file no. E63532
R
th(c-s)
M
s
M
t
w
Temperature sensor
R
100
B
100/125
Typical Applications*
• Matrix Converter
• Resonant Inverter
• Current Source Inverter
Remarks
• Case temperature limited to T
C
=125°C
max.
• Product reliability results are valid for
T
j
=150°C
• For short circuit: Soft R
Goff
recommended
• Take care of over-voltage caused by
stray inductance
GB
2
Rev. 0 – 16.04.2010
© by SEMIKRON
SEMiX302GB066HDs
Fig. 1: Typ. output characteristic, inclusive R
CC'+ EE'
Fig. 2: Rated current vs. temperature I
C
= f (T
C
)
Fig. 3: Typ. turn-on /-off energy = f (I
C
)
Fig. 4: Typ. turn-on /-off energy = f (R
G
)
Fig. 5: Typ. transfer characteristic
Fig. 6: Typ. gate charge characteristic
© by SEMIKRON
Rev. 0 – 16.04.2010
3
SEMiX302GB066HDs
Fig. 7: Typ. switching times vs. I
C
Fig. 8: Typ. switching times vs. gate resistor R
G
Fig. 9: Typ. transient thermal impedance
Fig. 10: Typ. CAL diode forward charact., incl. R
CC'+EE'
Fig. 11: Typ. CAL diode peak reverse recovery current
Fig. 12: Typ. CAL diode recovery charge
4
Rev. 0 – 16.04.2010
© by SEMIKRON
SEMiX302GB066HDs
SEMiX 2s
spring configuration
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal.
© by SEMIKRON
Rev. 0 – 16.04.2010
5
无线连接
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
