VDI 100-06P1 VII 100-06P1
VID 100-06P1 VIO 100-06P1
IGBT Modules
in ECO-PAC 2
Short Circuit SOA Capability
Square RBSOA
Preliminary data sheet
VIO
IJK 10
I
C25
= 93 A
V
CES
= 600 V
V
CE(sat) typ.
= 2.4 V
VII
OP9
VID
IK10
VDI
AC1
L9
X13
X15
SV18
L9
NTC
T16
PS18
A1
S18
LMN 9
E2
GH10
NTC
L9
X15
F1
X15
NTC
X16
AC1
X16
B3
Pin arangement see outlines
K10
VX18
X16
IK10
IGBTs
Symbol
V
CES
V
GES
I
C25
I
C80
I
CM
V
CEK
t
SC
(SCSOA)
P
tot
Symbol
T
C
= 25°C
T
C
= 80°C
V
GE
= ±15 V; R
G
= 15
Ω;
T
VJ
= 125°C
RBSOA, Clamped inductive load; L = 100 µH
Conditions
T
VJ
= 25°C to 150°C
Maximum Ratings
600
± 20
V
de
93
63
A
A
150
V
CES
10
A
µs
W
294
2.4
2.8
2.8
6.5
1.4
6.5
150
150
60
450
40
3.2
2.2
4.2
0.85
V
V
V
mA
mA
nA
ns
ns
ns
ns
mJ
mJ
nF
0.43 K/W
K/W
ne
4.5
V
CE
= V
CES
; V
GE
= ±15 V; R
G
= 15
Ω;
T
VJ
= 125°C
non-repetitive
T
C
= 25°C
Conditions
w
r
Characteristic Values
(T
VJ
= 25°C, unless otherwise specified)
min.
typ. max.
V
CE(sat)
V
GE(th)
I
CES
I
GES
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
R
thJC
R
thJH
I
C
= 100 A; V
GE
= 15 V; T
VJ
= 25°C
T
VJ
= 125°C
I
C
= 1.5 mA; V
GE
= V
CE
t
V
CE
= V
CES
;
fo
V
GE
= 0 V; T
VJ
= 25°C
T
VJ
= 125°C
No
V
CE
= 0 V; V
GE
=
±
20 V
Inductive load, T
VJ
= 125°C
V
CE
= 300 V; I
C
= 60 A
V
GE
= 15/0 V; R
G
= 15
Ω
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz
(per IGBT)
with heatsink compound (0.42 K/m.K; 50 µm)
si
V
gn
Features
Advantages
• NPT IGBT's
- positive temperature coefficient of
saturation voltage
- fast switching
• FRED diodes
- fast reverse recovery
- low forward voltage
• Industry Standard Package
- solderable pins for PCB mounting
- isolated DCB ceramic base plate
• space and weight savings
• reduced protection circuits
• leads with expansion bend for stress relief
Typical Applications
• AC and DC motor control
• AC servo and robot drives
• power supplies
• welding inverters
Recommended replacement:
Please contact your local
sales office
IXYS reserves the right to change limits, test conditions and dimensions.
© 2006 IXYS All rights reserved
1-2
0650
VDI 100-06P1 VII 100-06P1
VID 100-06P1 VIO 100-06P1
Reverse diodes (FRED)
Symbol
I
F25
I
F80
Symbol
V
F
I
RM
t
rr
R
thJC
R
thJH
Conditions
T
C
= 25°C
T
C
= 80°C
Conditions
I
F
= 60 A; T
VJ
= 25°C
T
VJ
= 125°C
I
F
= 60 A; di
F
/dt = 500 A/µs; T
VJ
= 125°C
V
R
= 300 V; V
GE
= 0 V
with heatsink compound (0.42 K/m.K; 50 µm)
VII
Maximum Ratings
134
82
A
A
Characteristic Values
min.
typ. max.
1.78
1.33
28
100
1.32
1.99
V
V
A
ns
0.66 K/W
K/W
B3
Temperature Sensor NTC
Symbol
R
25
B
25/50
Module
Symbol
T
VJ
T
stg
V
ISOL
M
d
a
Symbol
d
S
d
A
Weight
I
ISOL
≤
1 mA; 50/60 Hz
mounting torque (M4)
Max. allowable acceleration
Conditions
Conditions
Maximum Ratings
-40...+150
-40...+150
Conditions
T = 25°C
4.75
5.0
3375
5.25 kΩ
K
w
ne
11.2
11.2
24
1.5 - 2.0
14 - 18
50
Characteristic Values
min. typ. max.
mm
mm
g
VID
IXYS reserves the right to change limits, test conditions and dimensions.
© 2006 IXYS All rights reserved
2-2
0650
Data according to IEC 60747 and refer to a single transistor or diode unless otherwise stated.
No
t
fo
r
Creepage distance on surface
(Pin to heatsink)
Strike distance in air
(Pin to heatsink)
VDI
de
°C
°C
3000
V~
Nm
lb.in.
m/s
2
si
gn
VIO
Characteristic Values
min. typ. max.
嵌入式系统
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