SMNY2Z30
Advanced N-Ch Power MOSFET
SWITCHING REGULATOR APPLICATION
Features
High voltage: BV
DDS
=300V (Min.)
Low gate charge: Q
g
=2.9nC (Typ.)
Low drain-source On resistance: R
DS(on)
=8Ω (Max.)
Built-in protection zener diode
RoHS compliant device
Ordering Information
GDS
Part Number
SMNY2Z30
Marking
SMNY2Z30
Package
TO-92
TO-92
Marking Information
SMNY
2Z30
YWW
Column 1, 2: Device Code
Column 3: Production Information
e.g.) YWW
-. YWW: Date Code (year, week)
Absolute maximum ratings
(T
a
=25C unless otherwise noted)
Characteristic
Drain-source voltage
Gate-source voltage
Drain current (DC)
*
Drain current (Pulsed)
*
Avalanche current
(Note 2)
Single pulsed avalanche energy
(Note 2)
Repetitive avalanche current
(Note 1)
Repetitive avalanche energy
(Note 1)
Power dissipation
Junction temperature
Storage temperature range
* Limited only maximum junction temperature
Symbol
V
DSS
V
GSS
I
D
T
a
=25C
T
a
=100C
I
DM
I
AS
E
AS
I
AR
E
AR
P
D
T
J
T
stg
Rating
300
30
0.2
0.12
1
1.3
182.6
0.2
1.5
0.6
150
-55~150
Unit
V
V
A
A
A
A
mJ
A
mJ
W
C
C
Rev. date: 08-JUN-11
KSD-T0A075-000
www.auk.co.kr
1 of 8
SMNY2Z30
Thermal Characteristics
Characteristic
Thermal resistance, junction to ambient
Symbol
R
th(j-a)
Rating
Max. 200
Unit
C/W
Electrical Characteristics
(T
a
=25C unless otherwise noted)
Characteristic
Drain-source breakdown voltage
Gate threshold voltage
Drain-source cut-off current
Gate leakage current
Drain-source on-resistance
Forward transfer conductance
(Note 3)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
(Note 3,4)
Rise time
(Note 3,4)
Turn-off delay time
(Note 3,4)
Fall time
(Note 3,4)
Total gate charge
(Note 3,4)
Gate-source charge
(Note 3,4)
Gate-drain charge
(Note 3,4)
Symbol
BV
DSS
V
GS(th)
I
DSS
I
GSS
R
DS(ON)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
V
DS
=240V, V
GS
=10V
I
D
=0.2A
V
DD
=150V, I
D
=0.2A
R
G
=25Ω
V
DS
=25V, V
GS
=0V,
f=1MHz
Test Condition
I
D
=250uA, V
GS
=0
I
D
=250uA, V
DS
=V
GS
V
DS
=300V, V
GS
=0V
V
DS
=0V, V
GS
=10V
V
GS
=10V, I
D
=100mA
V
DS
=10V, I
D
=100mA
Min.
300
1.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
2
-
-
6
0.4
101
15
3.2
5
17
21
35
2.9
0.4
0.7
Max.
-
2.5
1
10
8
-
130
20
5
-
-
-
-
4.5
-
-
nC
ns
pF
Unit
V
V
uA
nA
S
Source-Drain Diode Ratings and Characteristics
(T
a
=25C unless otherwise noted)
Characteristic
Source current (DC)
Source current (Pulsed)
Forward voltage
Reverse recovery time
(Note 3,4)
Reverse recovery charge
(Note 3,4)
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
Test Condition
Integral reverse diode
in the MOSFET
V
GS
=0V, I
S
=8A
I
S
=0.2A, V
GS
=0V
dI
F
/dt=100A/us
Min.
-
-
-
-
-
Typ.
-
-
-
270
0.27
Max.
0.2
1
1.4
-
-
Unit
A
A
V
ns
uC
Gate to Source Zener Diode Characteristic
(T
a
=25C unless otherwise noted)
Characteristic
Gate-Source breakdown voltage
Note:
1. Repeated rating: Pulse width limited by safe operating area
2. L=8.9mH, I
AS
=8A, V
DD
=50V, R
G
=25, Starting T
J
=25C
3. Pulse test: Pulse width≤300us, Duty cycle≤2%
4. Essentially independent of operating temperature typical characteristics
Symbol
IG=1mA, VDS=0V
Min.
20
Typ.
24
Max.
-
Unit
V
Rev. date: 08-JUN-11
KSD-T0A075-000
www.auk.co.kr
2 of 8
SMNY2Z30
Electrical Characteristic Curves
Fig. 1 I
D
- V
DS
9
8
7
6
5
4
3
Fig. 2 I
D
– V
GS
-
Fig. 3 R
DS(ON)
- I
D
Fig. 4 I
S
- V
SD
Fig. 5 Capacitance - V
DS
Fig. 6 V
GS
- Q
G
℃
=
Rev. date: 08-JUN-11
KSD-T0A075-000
www.auk.co.kr
3 of 8
SMNY2Z30
Electrical Characteristic Curves
(Continue)
Fig. 7 BV
DSS
- T
J
Fig. 8 R
DS(ON)
- T
J
C
C
Fig. 9 I
D
- T
C
Fig. 10 Safe Operating Area
*
Rev. date: 08-JUN-11
KSD-T0A075-000
www.auk.co.kr
4 of 8
SMNY2Z30
Fig. 11 Gate Charge Test Circuit & Waveform
Fig. 12 Resistive Switching Test Circuit & Waveform
Fig. 13 E
AS
Test Circuit & Waveform
Rev. date: 08-JUN-11
KSD-T0A075-000
www.auk.co.kr
5 of 8
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