SMK1625D2
Advanced N-Ch Power MOSFET
DC-DC CONVERTER APPLICATION
HIGH VOLTAGE SWITCHING APPLICATIONS
Features
High Voltage : BV
DSS
=250V (Min.)
Low C
rss
: C
rss
=49pF (Typ.)
Low gate charge : Q
g
=22nC (Typ.)
Low R
DS(on)
: R
DS(on)
=0.27Ω (Max.)
PIN Connection
D
D
G
Ordering Information
Type No.
SMK1625D2
Marking
SMK1625
Package Code
D2-PAK
G
S
D2-PAK
S
Marking Diagram
Column 1 : Manufacturer
AUK
GYMDD
SMK1625
Column 2 : Production Information
e.g.) GYMDD
-. G : Factory management code
-. YMDD : Date Code (year, month, date)
Column 3 : Device Code
Absolute maximum ratings
(T
C
=25C unless otherwise noted)
Characteristic
Drain-source voltage
Gate-source voltage
Drain current (DC)
*
Symbol
V
DSS
V
GSS
I
D
(T
C
=25C)
(T
C
=100C)
I
DM
P
D
I
AS
E
AS
I
AR
E
AR
T
J
T
stg
Rating
250
30
16
7.2
64
130
16
480
16
13.9
150
-55~150
Unit
V
V
A
A
A
W
A
mJ
A
mJ
C
Drain current (Pulsed)
*
*
Drain power dissipation
Avalanche current (Single)
Single pulsed avalanche energy
Avalanche current (Repetitive)
Repetitive avalanche energy
Junction temperature
Storage temperature range
* Limited by maximum junction temperature
Characteristic
Thermal
resistance
Junction-case
Junction-ambient
Symbol
R
th(J-C)
R
th(J-A)
KSD-T6S006-000
Typ.
-
-
Max.
0.96
62.5
Unit
C/W
1
SMK1625D2
Electrical Characteristics
(T
C
=25C unless otherwise noted)
Characteristic
Drain-source breakdown voltage
Gate threshold voltage
Drain-source cut-off current
Gate leakage current
Drain-source on-resistance
Forward transfer conductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Symbol
BV
DSS
V
GS(th)
I
DSS
I
GSS
R
DS(ON)
g
fs
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Test Condition
I
D
=250uA, V
GS
=0
I
D
=250uA, V
DS
=V
GS
V
DS
=250V, V
GS
=0V
V
DS
=0V, V
GS
=30V
V
GS
=10V, I
D
=8.0A
V
DS
=10V, I
D
=8.0A
V
GS
=0V, V
DS
=25V
f=1MHz
Min.
250
2.0
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
0.22
10.5
968
204
49
15
130
135
105
22
7.1
5.9
Max.
-
4.0
1
100
0.27
-
1275
278
64
-
-
-
-
28
-
-
Unit
V
V
uA
nA
S
pF
V
DD
=125V, I
D
=16A
R
G
=25
-
-
-
-
-
-
ns
V
DS
=200V, V
GS
=10V
I
D
=16A
nC
Source-Drain Diode Ratings and Characteristics
(T
C
=25C unless otherwise noted)
Characteristic
Source current
Source current (Pulsed)
Forward voltage
Reverse recovery time
Reverse recovery charge
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
Test Condition
Integral reverse diode
in the MOSFET
V
GS
=0V, I
S
=16A
I
S
=16A, V
GS
=0
dI
F
/dt=100A/us
Min.
-
-
-
-
-
Typ.
-
-
-
208
1.63
Max.
16
64
1.4
-
-
Unit
A
V
ns
uC
Note ;
①
Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
②
L=3.0mH, I
AS
=16A, V
DD
=50V, R
G
=25Ω
③
Pulse Test : Pulse Width≤ 300us, Duty cycle≤ 2%
④
Essentially independent of operating temperature
KSD-T6S006-000
2
Electrical Characteristic Curves
Fig. 1 I
D
- V
DS
Fig. 2 I
D
- V
GS
SMK1625D2
:
-
Fig. 3 R
DS(on)
- I
D
Fig. 4 I
S
- V
SD
Fig. 5 Capacitance - V
DS
Fig. 6 V
GS
- Q
G
℃
KSD-T6S006-000
3
SMK1625D2
Fig. 7 V
DSS
- T
J
Fig. 8 R
DS(on)
- T
J
ㅋ
C
C
Fig. 9
I
D
- T
C
Fig. 10 Safe Operating Area
`
*
KSD-T6S006-000
4
Fig. 11 Gate Charge Test Circuit & Waveform
SMK1625D2
Fig. 12 Resistive Switching Test Circuit & Waveform
Fig. 13 E
AS
Test Circuit & Waveform
KSD-T6S006-000
5
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