< X/Ku band internally matched power GaAs FET >
MGFK25V4045
14.0 – 14.5 GHz BAND / 0.3W
DESCRIPTION
The MGFK25V4045 is an internally impedance-matched
GaAs power FET especially designed for use in 14.0 – 14.5
GHz band amplifiers. The hermetically sealed metal-ceramic
package guarantees high reliability.
FEATURES
Internally matched to 50(ohm) system
Flip-chip mounted
High output power
P1dB=0.3W (TYP.) @f=14.0 – 14.5GHz
High linear power gain
GLP=9.0dB (TYP.) @f=14.0 – 14.5GHz
High power added efficiency
P.A.E.=25% (TYP.) @f=14.0 – 14.5GHz
14.0 – 14.5 GHz band power amplifiers
IG
APPLICATION
QUALITY GRADE
RECOMMENDED BIAS CONDITIONS
VDS=8V
ID=80mA
Refer to Bias Procedure
(Ta=25C)
Absolute maximum ratings
Symbol
VGDO
VGSO
ID
IGR
IGF
PT *1
Tch
Tstg
Parameter
Gate to drain breakdown voltage
Gate to source breakdown voltage
Drain current
Reverse gate current
Forward gate current
Total power dissipation
Cannel temperature
Storage temperature
Ratings
-15
-15
500
-1
1
2.7
175
-65 to +175
Unit
V
V
mA
mA
mA
W
C
C
Keep Safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum
effort into making semiconductor products better
and more reliable , but there is always the
possibility that trouble may occur with them.
Trouble with semiconductors may lead to personal
injury , fire or property damage. Remember to give
due consideration to safety when making your
circuit designs , with appropriate measure such
as (I) placement of substitutive , auxiliary circuits ,
(ii) use of non-flammable material or (iii) prevention
against any malfunction or mishap.
*1 : Tc=25C
Electrical characteristics
Symbol
IDSS
gm
VGS(off)
P1dB
GLP
PAE
Rth(ch-c) *2
(Ta=25C)
Parameter
Saturated drain current
Transconductance
Gate to source cut-off voltage
Output power at 1dB gain compression
Test conditions
Min.
VDS=3V,VGS=0V
VDS=3V,ID=150mA
VDS=3V,ID=1mA
VDS=8V,ID(RF off)=150mA
f=14.0 – 14.5GHz
delta Vf method
-
-
-2
23
7
-
-
Limits
Typ.
200
100
-
26
9
25
-
Unit
Max.
500
-
-5
-
-
-
40
mA
mS
V
dBm
dB
%
C/W
Linear Power Gain
Power added efficiency
Thermal resistance
*2 : Channel-case
Publication Date : Apr., 2011
1
< X/Ku band internally matched power GaAs FET >
MGFK25V4045
14.0 – 14.5 GHz BAND / 0.3W
Keep safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more
reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors
may lead to personal injury, fire or property damage. Remember to give due consideration to safety when
making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary
circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap.
Notes regarding these materials
•These materials are intended as a reference to assist our customers in the selection of the Mitsubishi
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© 2011 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED.
Publication Date : Apr., 2011
3
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