< C band internally matched power GaAs FET >
MGFC36V5964A
5.9 -6.4 GHz BAND / 4W
DESCRIPTION
The MGFC36V5964A is an internally impedance-matched
GaAs power FET especially designed for use in 5.9 – 6.4
GHz band amplifiers. The hermetically sealed metal-ceramic
package guarantees high reliability.
OUTLINE DRAWING
Unit : millimeters
21.0 +/-0.3
(1)
2MIN
FEATURES
Class A operation
Internally matched to 50(ohm) system
High output power
P1dB=4W (TYP.) @f=5.9 – 6.4GHz
High power gain
GLP=10.5dB (TYP.) @f=5.9 – 6.4GHz
High power added efficiency
P.A.E.=30% (TYP.) @f=5.9 – 6.4GHz
Low distortion [ item -51]
IM3=-45dBc (TYP.) @Po=25dBm S.C.L.
0.6 +/-0.15
12.9 +/-0.2
(2)
(2)
R-1.6
11.3
2.6 +/-0.2
2MIN
(3)
10.7
17.0 +/-0.2
APPLICATION
4.5 +/-0.4
QUALITY
IG
1.6
item 01 : 5.9 – 6.4 GHz band power amplifier
item 51 : 5.9 – 6.4 GHz band digital radio communication
RECOMMENDED BIAS CONDITIONS
VDS=10V
ID=1.2A Refer to Bias Procedure
RG=100ohm
0.2
12.0
GF-8
(1) GATE
(2) SOURCE (FLANGE)
(3) DRAIN
Absolute maximum ratings
Symbol
VGDO
VGSO
ID
IGR
IGF
PT *1
Tch
Tstg
(Ta=25C)
Parameter
Gate to drain breakdown voltage
Gate to source breakdown voltage
Drain current
Reverse gate current
Forward gate current
Total power dissipation
Cannel temperature
Storage temperature
Ratings
-15
-15
3.75
-10
21
25
175
-65 to +175
Unit
V
V
A
mA
mA
W
C
C
Keep Safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum
effort into making semiconductor products better
and more reliable , but there is always the
possibility that trouble may occur with them.
Trouble with semiconductors may lead to personal
injury , fire or property damage. Remember to give
due consideration to safety when making your
circuit designs , with appropriate measure such
as (I) placement of substitutive , auxiliary circuits ,
(ii) use of non-flammable material or (iii) prevention
against any malfunction or mishap.
*1 : Tc=25C
Electrical characteristics
Symbol
IDSS
gm
VGS(off)
P1dB
GLP
ID
P.A.E.
IM3
*2
Rth(ch-c) *3
(Ta=25C)
Parameter
Saturated drain current
Transconductance
Gate to source cut-off voltage
Output power at 1dB gain compression
Test conditions
Min.
VDS=3V,VGS=0V
VDS=3V,ID=1.1A
VDS=3V,ID=10mA
VDS=10V,ID(RF off)=1.2A
f=5.9 – 6.4GHz
-
-
-
35
9
-
-
-42
delta Vf method
-
Limits
Typ.
-
1
-
37
10.5
-
30
-45
5
0.1
Unit
Max.
3.75
-
-4.5
-
-
1.8
-
-
6
A
S
V
dBm
dB
A
%
dBc
C/W
Linear Power Gain
Drain current
Power added efficiency
3 order IM distortion
Thermal resistance
rd
*2 :Item -51,2 tone test, Po=25dBm Single Carrier Level, f=6.4GHz, Delta f=10MHz
*3 :Channel-case
Publication Date : Apr., 2011
1
< C band internally matched power GaAs FET >
MGFC36V5964A
5.9 – 6.4 GHz BAND / 4W
Keep safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more
reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors
may lead to personal injury, fire or property damage. Remember to give due consideration to safety when
making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary
circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap.
Notes regarding these materials
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© 2011 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED.
Publication Date : Apr., 2011
3
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