< High-power GaAs FET (small signal gain stage) >
MGF0952P
L & S BAND / 4.5W
SMD / Plastic Mold non - matched
DESCRIPTION
The MGF0952P GaAs FET with an N-channel schottky
Gate, is designed for use L/S band amplifiers.
FEATURES
High output power
Po=36.5dBm(TYP.) @f=2.15GHz,Pin=25dBm
High power gain
Gp=13.5dB(TYP.) @f=2.15GHz
High power added efficiency
add=50%(TYP.)
@f=2.15GHz,Pin=25dBm
Plastic Mold Lead – less Package
APPLICATION
For L/S Band power amplifiers
QUALITY
GG
Fig.1
Ids=700mA
Rg=100
RECOMMENDED BIAS CONDITIONS
Vds=10V
Delivery
Tape & Reel(1.5K)
(Ta=25C)
Absolute maximum ratings
Symbol
V
GSO
V
GDO
I
D
I
GR
I
GF
P
T
Tch
Tstg
Parameter
Gate to source breakdown voltage
Gate to drain breakdown voltage
Drain current
Reverse gate current
Forward gate current
Total power dissipation
Cannel temperature
Storage temperature
Ratings
-15
-15
3.5
-10
21
20.0
150
-40 to +150
Unit
V
V
A
mA
mA
W
C
C
Electrical characteristics
Symbol
V
GS(off)
Po
*1
add
*1
G
LP *2
IM3
*3
Rth(ch-c)
(Ta=25C)
Parameter
Gate to source cut-off voltage
Output power
Power added Efficiency
Linear Power Gain
3rd order Modulation Distortion
Thermal Resistance
*4
Test conditions
V
DS
=3V,I
D
=12.6mA
V
DS
=10V,I
D
=700mA,f=2.15GHz
*1:
Pin=25dBm,
*2
:P
in
=15dB
*3:
f1=2.15GHz,f2=2.16GHz
Po(SCL)=25dBm
Vf
Method
Min.
-1
35.0
-
11
-
-
Limits
Typ.
-3
36.5
50
13.5
-42
4.5
Max.
-5
-
-
-
-
6.5
Unit
V
dBm
%
dB
dBc
C/W
*4
:
Channel to case /
Above parameters, ratings, limits are subject to change.
Publication Date : Apr., 2011
1
< High-power GaAs FET (small signal gain stage) >
MGF0952P
L & S BAND / 4.5W
SMD / Plastic Mold non - matched
MGF09152P TYPICAL CHARACTERISTICS
Publication Date : Apr., 2011
2
< High-power GaAs FET (small signal gain stage) >
MGF0952P
L & S BAND / 4.5W
SMD / Plastic Mold non - matched
MGF09152P TYPICAL CHARACTERISTICS
Publication Date : Apr., 2011
3
< High-power GaAs FET (small signal gain stage) >
MGF0952P
L & S BAND / 4.5W
SMD / Plastic Mold non - matched
MGF0952P S PARAMETERS
(Ta=25C,VD=10V,ID=700mA, Reference Plane see Fig.1)
Publication Date : Apr., 2011
4
< High-power GaAs FET (small signal gain stage) >
MGF0952P
L & S BAND / 4.5W
SMD / Plastic Mold non - matched
MGF0952P TEST FIXTURE : f=2.15GHz
Publication Date : Apr., 2011
5
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