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MGF0951P_11: 产品描述High-power GaAs FET (small signal gain stage); 文件大小268KB，共6页; 制造商Mitsubishi(日本三菱); 官网地址http://www.mitsubishielectric.com/semiconductors/

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MGF0951P_11概述

High-power GaAs FET (small signal gain stage)

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< High-power GaAs FET (small signal gain stage) >

MGF0951P

L & S BAND / 1.2W

SMD / Plastic Mold non - matched

DESCRIPTION

The MGF0951P GaAs FET with an N-channel schottky

Gate, is designed for use L/S band amplifiers.

FEATURES



High output power

Po=31dBm(TYP.) @f=2.15GHz,Pin=20dBm



High power gain

Gp=13dB(TYP.) @f=2.15GHz



High power added efficiency

add=50%(TYP.)

@f=2.15GHz,Pin=20dBm



Plastic Mold Lead – less Package

APPLICATION



For L/S Band power amplifiers

QUALITY



Fig.1



Ids=200mA



Rg=500

RECOMMENDED BIAS CONDITIONS



Vds=10V

Delivery

Tape & Reel(1.5K)

(Ta=25C)

Absolute maximum ratings

Symbol

GSO

GDO

Tch

Tstg

Parameter

Gate to source breakdown voltage

Gate to drain breakdown voltage

Drain current

Reverse gate current

Forward gate current

Total power dissipation

Cannel temperature

Storage temperature

Ratings

-15

800

-2.5

5.4

6.0

150

-40 to +150

Unit

C

Electrical characteristics

Symbol

GS(off)

add

LP *2

IM3

Rth(ch-c)

(Ta=25C)

Parameter

Gate to source cut-off voltage

Transconductance

Output power

Power added Efficiency

Linear Power Gain

3rd order Modulation Distortion

Thermal Resistance

Test conditions

=3V,I

=2.5mA

=3V,I

=300mA

=10V,I

=200mA,f=2.15GHz

*1:

Pin=20dBm,

=10dB

*3:

f1=2.15GHz,f2=2.16GHz

Po(SCL)=20dBm

Vf

Method

Min.

-1

29.5

Limits

Typ.

200

-45

Max.

-5

Unit

dBm

dBc

C/W

Channel to case /

Above parameters, ratings, limits are subject to change.

Publication Date : Apr., 2011

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