< High-power GaAs FET (small signal gain stage) >
MGF0911A
L & S BAND / 12W
non - matched
DESCRIPTION
The MGF0911A, GaAs FET with an N-channel schottky
gate, is designed for use in UHF band amplifiers.
FEATURES
Class A operation
High output power
P1dB=41.0dBm(TYP.) @f=2.3GHz
High power gain
GLP=11.0dB(TYP.)
@f=2.3GHz
High power added efficiency
P.A.E =40%(TYP.)
@f=2.3GHz,P1dB
Hermetically sealed metal-ceramic package with ceramic lid
APPLICATION
For UHF Band power amplifiers
QUALITY
IG
RECOMMENDED BIAS CONDITIONS
Vds=10V
Ids=2.6A
Rg=50
Refer to Bias Procedure
(Ta=25C)
Absolute maximum ratings
Symbol
V
GDO
V
GSO
I
D
I
GR
I
GF
P
T*1
Tch
Tstg
Parameter
Gate to drain voltage
Gate to source voltage
Drain current
Reverse gate current
Forward gate current
Total power dissipation
Cannel temperature
Storage temperature
Ratings
-15
-15
10
-30
63
37.5
175
-65 to +175
Unit
V
V
A
mA
mA
W
C
C
*1:Tc=25C
Electrical characteristics
Symbol
IDSS
gm
VGS(off)
P1dB
GLP
P.A.E.
Rth(ch-c) *2
(Ta=25C)
Parameter
Saturated drain current
Transconductance
Gate to source cut-off voltage
Output power at 1dB gain compression
Test conditions
Min.
VDS=3V,VGS=0V
VDS=3V,ID=2.6A
VDS=3V,ID=20mA
VDS=10V,ID(RF off)=2.6A
f=2.3GHz
ΔVf
method
-
-
-2
40
10
-
-
Limits
Typ.
-
3
-
41
11
40
-
Unit
Max.
10
-
-5
-
-
-
4.0
A
S
V
dBm
dB
%
C/W
Linear Power Gain
Power added efficiency
Thermal resistance
*2 :Channel-case
Publication Date : Apr., 2011
1
< High-power GaAs FET (small signal gain stage) >
MGF0911A
L & S BAND / 12W
non - matched
Keep safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more
reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors
may lead to personal injury, fire or property damage. Remember to give due consideration to safety when
making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary
circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap.
Notes regarding these materials
•These materials are intended as a reference to assist our customers in the selection of the Mitsubishi
semiconductor product best suited to the customer’s application; they do not convey any license under any
intellectual property rights, or any other rights, belonging to Mitsubishi Electric Corporation or a third party.
•Mitsubishi Electric Corporation assumes no responsibility for any damage, or infringement of any
third-party’s rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or
circuit application examples contained in these materials.
•All information contained in these materials, including product data, diagrams, charts, programs and
algorithms represents information on products at the time of publication of these materials, and are subject
to change by Mitsubishi Electric Corporation without notice due to product improvements or other reasons. It
is therefore recommended that customers contact Mitsubishi Electric Corporation or an authorized
Mitsubishi Semiconductor product distributor for the latest product information before purchasing a product
listed herein.
The information described here may contain technical inaccuracies or typographical errors. Mitsubishi
Electric Corporation assumes no responsibility for any damage, liability, or other loss rising from these
inaccuracies or errors.
Please also pay attention to information published by Mitsubishi Electric Corporation by various means,
including the Mitsubishi Semiconductor home page (http://www.MitsubishiElectric.com/).
•When using any or all of the information contained in these materials, including product data, diagrams,
charts, programs, and algorithms, please be sure to evaluate all information as a total system before making
a final decision on the applicability of the information and products. Mitsubishi Electric Corporation assumes
no responsibility for any damage, liability or other loss resulting from the information contained herein.
•Mitsubishi Electric Corporation semiconductors are not designed or manufactured for use in a device or
system that is used under circumstances in which human life is potentially at stake. Please contact
Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor when
considering the use of a product contained herein for any specific purposes, such as apparatus or systems
for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use.
•The prior written approval of Mitsubishi Electric Corporation is necessary to reprint or reproduce in whole or
in part these materials.
•If these products or technologies are subject to the Japanese export control restrictions, they must be
exported under a license from the Japanese government and cannot be imported into a country other than
the approved destination.
Any diversion or re-export contrary to the export control laws and regulations of Japan and/or the country of
destination is prohibited.
•Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor
for further details on these materials or the products contained therein.
© 2011 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED.
Publication Date : Apr., 2011
4
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
