< High-power GaAs FET (small signal gain stage)>
MGF0905A
L & S BAND / 2.5W
non - matched
DESCRIPTION
The MGF0905A, GaAs FET with an N-channel schottky
gate, is designed for use in UHF band amplifiers.
OUTLINE DRAW
ING
Unit : m illim eters
FEATURES
High output power
Po=34.0dBm(TYP.) @f=1.65GHz,Pin=26dBm
High power gain
Gp=8.0dB(TYP.)
@f=1.65GHz,Pin=26dBm
High power added efficiency
P.A.E =40%(TYP.) @f=1.65GHz,Pin=26dBm
①
2MIN
φ2.2
0.6±0.2
For UHF Band power amplifiers
QUALITY
GG
③
5.0
RECOMMENDED BIAS CONDITIONS
Vds=8V
Ids=800mA
Rg=100
Refer to Bias Procedure
(Ta=25C)
1.65
0.1
0.65
Absolute maximum ratings
Symbol
V
GDO
V
GSO
I
D
I
GR
I
GF
P
T*1
Tch
Tstg
14.0
Parameter
Gate to drain voltage
Gate to source voltage
Drain current
Reverse gate current
Forward gate current
Total power dissipation
Cannel temperature
Storage temperature
Ratings
-17
-17
3200
-10
21.5
12
175
-65 to +175
Unit
V
V
mA
mA
mA
W
C
C
GF-7
(1) GATE
(2) SOURCE (FLANGE)
(3) DRAIN
*1:Tc=25C
Electrical characteristics
Symbol
IDSS
gm
VGS(off)
Po
P.A.E.
Rth(ch-c) *2
Rth(ch-a) *3
(Ta=25C)
Parameter
Saturated drain current
Transconductance
Gate to source cut-off voltage
Output power
Power added efficiency
Thermal resistance
Thermal resistance
Test conditions
Min.
VDS=3V,VGS=0V
VDS=3V,ID=800mA
VDS=3V,ID=10mA
VDS=8V,ID(RF off)=800mA
f=1.65GHz,Pin=26dBm
ΔVf
method
ΔVf
method
1600
500
-1
33
-
-
-
Limits
Typ.
2400
800
-3
34
40
-
-
Unit
Max.
3200
-
-5
-
-
12.5
72.5
mA
mS
V
dBm
%
C/W
C/W
*2 :Channel-case
*3 :Channel-ambient
Publication Date : Apr., 2011
1
1.9±0.4
9.0±0.2
2MIN
APPLICATION
②
②
4.4+0/-0.3
< High-power GaAs FET (small signal gain stage) >
MGF0905A
L & S BAND / 2.5W
non - matched
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Publication Date : Apr., 2011
4
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