PRELIMINARY
< High-power GaN HEMT (small signal gain stage) >
MGF0840G
L to C BAND / 10W
non - matched
DESCRIPTION
The MGF0840G, GaN HEMT with an N-channel schottky
gate, is designed for MMDS/UMTS/WiMAX applications.
OUTLINE DRAW
ING
Unit : m illim eters
FEATURES
High voltage operation
VDS=47V
High output power
Po=40.5dBm(TYP.) @f=2.6GHz,P3dB
High efficiency
d=60%(TYP.)
@f=2.6GHz,P3dB
Designed for use in Class AB linear amplifiers
①
2MIN
φ2.2
0.6±0.2
APPLICATION
MMDS/UMTS/WiMAX
③
QUALITY
GG
Packaging
1.65
RECOMMENDED BIAS CONDITIONS
Vds=47V
Ids=90mA
Rg=120
(Ta=25C)
0.1
4 inch Tray (25 pcs)
5.0
0.65
Absolute maximum ratings
Symbol
V
DS
V
GS
I
GR
I
GF
P
T*1
Tch
Tstg
14.0
Parameter
Drain to Source Voltage
Gate to source voltage
Reverse gate current
Forward gate current
Total power dissipation
Cannel temperature
Storage temperature
Ratings
120
-10
-1.5
30
21
230
-65 to +175
Unit
V
V
mA
mA
W
C
C
GF-7
(1) GATE
(2) SOURCE (FLANGE)
(3) DRAIN
*1:Tc=25C
Electrical characteristics
Symbol
VGS(off)
P3dB
(Ta=25C)
Parameter
Gate to source cut-off voltage
3dB gain compression power
Drain efficiency
Linear power gain
Thermal resistance
Test conditions
Min.
VDS=47V,ID=3mA
VDS=47V,ID(RF off)=90mA
f=2.6GHz
*2 :
Pin=20dBm
Limits
Typ.
-
40.5
60
15
6.8
Unit
Max.
-5
-
-
-
9.8
V
dBm
%
dB
C/W
-1
39.5
-
14
-
d
GLP
*2
Rth(ch-c) *3
ΔVf
method
*3 :Channel-case
Specification are subject to change without notice.
Note
DC aging is recommended to perform before operating in order to stabilize a characteristics of GaN-HEMT. (Ta≧80C)
Bias conditions
Vds=47V , Ids=90mA
Time
10hrs
Publication Date : May., 2011
1
1.9±0.4
9.0±0.2
2MIN
②
②
4.4+0/-0.3
< High-power GaN HEMT (small signal gain stage) >
MGF0840G
L to C BAND / 10W
non - matched
PRELIMINARY
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Publication Date : May., 2011
4
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