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SRC1212E

产品描述NPN Silicon Transistor
文件大小218KB,共4页
制造商KODENSHI
官网地址http://www.kodenshi.co.jp
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SRC1212E概述

NPN Silicon Transistor

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SRC1212E
NPN Silicon Transistor
Descriptions
Switching application
Interface circuit and driver circuit application
PIN Connection
OUT
Features
With built-in bias resistor
Simplify circuit design
Reduce a quantity of parts and
manufacturing process
High packing density
IN
COMMON
OUT
IN
R
1
R
1
= 100KΩ
Ordering Information
Type NO.
SRC1212E
Marking
RB
① ②
①Device
Code
Year&Week Code
COMMON
Package Code
SOT-523
Absolute Maximum Ratings
Characteristic
Output voltage
Input voltage
Output current
Power dissipation
Junction temperature
Storage temperature range
(Ta=25°C)
Symbol
V
O
V
I
I
O
P
D
T
J
T
stg
Rating
50
40, -5
100
150
150
-55 ~ 150
Unit
V
V
mA
mW
°C
°C
Electrical Characteristics
Characteristic
Output cut-off current
DC current gain
Output voltage
Input voltage (ON)
Input voltage (OFF)
Transition frequency
Input current
Input resistor (Input to base)
(Ta=25°C)
Symbol
I
O(OFF)
G
I
V
O(ON)
V
I(ON)
V
I(OFF)
f
T
*
I
I
R
1
Test Condition
V
O
=50V, V
I
=0
V
O
=5V, I
O
=10mA
I
O
=10mA, I
I
=0.5mA
V
O
=0.2V, I
O
=5mA
V
O
=5V, I
O
=0.1mA
V
O
=10V, I
O
=5mA, f=1MHz
V
I
=5V, I
O
=0
-
Min. Typ. Max.
-
120
-
-
0.3
-
-
70
-
-
0.1
-
-
200
-
100
500
-
0.3
4.4
-
-
0.1
130
Unit
nA
-
V
V
V
MHz
mA
* : Characteristic of transistor only
KSD-R5E019-000
1

 
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