< L/S band internally matched power GaAs FET >
MGFS45B2527B
2.5 – 2.7 GHz BAND / 30W
DESCRIPTION
The MGFS45B2527B is an internally impedance-matched
GaAs power FET especially designed for use in 2.5 – 2.7
GHz band amplifiers. The hermetically sealed metal-ceramic
package guarantees high reliability.
FEATURES
Class AB operation
Internally matched to 50(ohm) system
High output power
Po(SAT)=30W (TYP.) @f=2.5 – 2.7GHz
High power gain
GLP=12.5dB (TYP.) @f=2.5 – 2.7GHz
Distortion
EVM=1.0% (TYP.) @f=2.5 – 2.7GHz, Po=34dBm
EVM=2.0% (TYP.) @f=2.5 – 2.7GHz, Po=37dBm
RECOMMENDED BIAS CONDITIONS
VDS=12V
ID=0.9A
RG=10ohm
Absolute maximum ratings
Symbol
VGDO
VGSO
MAXID
PT *1
Tch
Tstg
(Ta=25C)
Keep Safety first in your circuit designs!
Unit
V
V
A
W
C
C
-15
-10
10
78
Parameter
Gate to drain breakdown voltage
Gate to source breakdown voltage
Maximum drain current
Total power dissipation
Cannel temperature
Storage temperature
Ratings
175
-55 to +150
*1 : Tc=25C
Mitsubishi Electric Corporation puts the maximum
effort into making semiconductor products better
and more reliable , but there is always the
possibility that trouble may occur with them.
Trouble with semiconductors may lead to personal
injury , fire or property damage. Remember to give
due consideration to safety when making your
circuit designs , with appropriate measure such
as (I) placement of substitutive , auxiliary circuits ,
(ii) use of non-flammable material or (iii) prevention
against any malfunction or mishap.
Electrical characteristics
Symbol
VGS(off)
Po(SAT)
GLP
ID
EVM *2
Rth(ch-c) *3
(Ta=25C)
Parameter
Gate to source cut-off voltage
Output Power
Power Gain
Drain current
Error Vector Magnitude
Thermal resistance
Test conditions
Min.
VDS=3V,ID=100mA
VDS=12V,ID(RF off)=0.9A
f=2.5 – 2.7GHz
VDS=12V,ID(RF off)=0.9A
f=2.5 – 2.7GHz ,Pout=34dBm
delta Vf method
10.0
-
-
-
-0.5
-
Limits
Typ.
-
45
12.5
1.2
1.0
1.2
Unit
Max.
-3.0
-
-
1.5
2.0
1.9
V
dBm
dB
A
%
C/W
*2 :WiMAX Downlink, 64QAM-3/4, Channel Bandwidth:6MHz
*3 :Channel-case
Publication Date : Apr., 2011
1
< L/S band internally matched power GaAs FET >
MGFS45B2527B
2.5 – 2.7 GHz BAND / 30W
Keep safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more
reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors
may lead to personal injury, fire or property damage. Remember to give due consideration to safety when
making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary
circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap.
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© 2011 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED.
Publication Date : Apr., 2011
4
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