SUT575EF
Epitaxial planar NPN/PNP silicon transistor
Description
•
Complex type bipolar transistor
Feature
•
Very small package save PCB area
•
Reduce quantity of parts and mounting cost
•
Both DN030 chip and DP030 chip in SOT-563F package
Package : SOT-563F
Ordering Information
Type NO.
SUT575EF
Marking
NX
□
Package Code
SOT-563F
□
: Year & Week Code
Equivalent circuit & PIN Connections
•
Equivalent Circuit
3
2
1
Tr2
Tr1
PIN Connections
1. Emitter 1
2. Base 1
3. Collector 2
4. Emitter 2
5. Base 2
6. Collector 1
4
5
6
Absolute Maximum Ratings
[Tr1, Tr2]
Rating
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
※:
Total rating
(Ta=25°C)
Symbol
Tr1
V
CBO
V
CEO
V
EBO
I
C
P
C
※
T
J
T
stg
15
12
5
500
150
150
-55~150
Unit
Tr2
-15
-12
-5
-500
V
V
V
mA
mW
°C
°C
KSD-T5U007-001
1
SUT575EF
Electrical Characteristics
[Tr1]
Characteristic
Collector-emitter breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
(Ta=25°C)
Symbol
BV
CEO
I
CBO
I
EBO
h
FE
*
V
CE(sat)
V
CE(sat)
*
V
BE(sat)
V
BE(sat)
*
f
T
C
ob
Test Condition
I
C
=1mA, I
B
=0
V
CB
=15V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=2V, I
C
=10mA
I
C
=100mA, I
B
=10mA
I
C
=300mA, I
B
=30mA
I
C
=100mA, I
B
=10mA
I
C
=300mA, I
B
=30mA
V
CE
=5V, I
C
=10mA
V
CB
=10V, I
E
=0, f=1MHz
Min. Typ. Max.
12
-
-
200
-
-
-
-
-
-
-
-
-
-
-
-
-
-
300
3
-
0.1
0.1
450
0.2
0.5
1.2
1.7
-
-
Unit
V
μA
μA
-
V
V
V
V
MHz
pF
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
*:
Pulse test: t
P
≤300µs,
Duty cycle≤2%
Electrical Characteristics
[Tr2]
Characteristic
Collector-emitter breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
(Ta=25°C)
Symbol
BV
CEO
I
CBO
I
EBO
h
FE
*
V
CE(sat)
V
CE(sat)
*
Test Condition
I
C
=-1mA, I
B
=0
V
CB
=-15V, I
E
=0
V
EB
=-5V, I
C
=0
V
CE
=-2V, I
C
=-10mA
I
C
=-100mA, I
B
=-10mA
I
C
=-300mA, I
B
=-30mA
I
C
=-100mA, I
B
=-10mA
I
C
=-300mA, I
B
=-30mA
V
CE
=-5V, I
C
=-10mA
V
CB
=-10V, I
E
=0, f=1MHz
Min. Typ. Max.
-12
-
-
200
-
-
-
-
-
-
-
-
-
-
-
-
-
-
350
4
-
-0.1
-0.1
450
-0.2
-0.5
-1.2
-1.7
-
-
Unit
V
μA
μA
-
V
V
V
V
MHz
pF
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
V
BE(sat)
V
BE(sat)
*
f
T
C
ob
*:
Pulse test: t
P
≤300µs,
Duty cycle≤2%
KSD-T5U007-001
2
SUT575EF
Electrical Characteristic Curves
[Tr1]
Fig. 1 I
C
-V
CE
Fig. 2 I
C
-V
BE
Fig. 3 h
FE
-I
C
Fig. 4 V
CE(sat)
-I
C
KSD-T5U007-001
3
SUT575EF
Electrical Characteristic Curves
[Tr2]
Fig. 1 I
C
-V
CE
Fig. 2 I
C
-V
BE
Fig. 3 h
FE
-I
C
Fig. 4 V
CE(sat)
-I
C
KSD-T5U007-001
4
SUT575EF
Outline Dimension
※
Recommend PCB solder land
[Unit: mm]
KSD-T5U007-001
5
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