SUT483J
Epitaxial planar NPN/PNP silicon transistor
Description
•
Complex type bipolar transistor
Feature
•
Small package save PCB area
•
Reduce quantity of parts and mounting cost
•
Both 2SA1980 chip and 2SC5343 chip in SOT-363 package
Package : SOT-363
Ordering Information
Type NO.
SUT483J
Marking
3X
□
① ②
①Device
Code
②Year&Week
Code
Package Code
SOT-363
Equivalent circuit & PIN Connections
•
Equivalent Circuit
3
2
1
PIN Connections
1.
2.
3.
4.
5.
6.
Emitter 1
Base 1
Collector 2
Emitter 2
Base 2
Collector 1
Tr2
Tr1
4
5
6
Absolute Maximum Ratings
[Tr1, Tr2]
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
※:
Total rating
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
※
T
J
T
stg
Rating
Tr1
60
50
5
150
200
150
-55~150
Tr2
-50
-50
-5
-150
Unit
V
V
V
mA
mW
°C
°C
KSD-T5S001-002
1
SUT483J
Electrical Characteristics
[ Tr1 ]
Characteristic
Collector-emitter breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
(Ta=25°C)
Symbol
BV
CEO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE
f
T
C
ob
Test Condition
I
C
=1mA, I
B
=0
V
CB
=60V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=6V, I
C
=2mA
I
C
=100mA, I
B
=10mA
V
CE
=6V, I
C
=2mA
V
CE
=10V, I
C
=10mA
V
CB
=10V, I
E
=0, f=1MHz
Min. Typ. Max.
50
-
-
120
-
-
-
-
-
-
-
-
-
0.65
200
2
-
0.1
0.1
400
0.25
-
-
-
Unit
V
μA
μA
-
V
V
MHz
pF
Electrical Characteristics
[ Tr2 ]
Characteristic
Collector-emitter breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
(Ta=25°C)
Symbol
BV
CEO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE
f
T
C
ob
Test Condition
I
C
=-1mA, I
B
=0
V
CB
=-50V, I
E
=0
V
EB
=-5V, I
C
=0
V
CE
=-6V, I
C
=-2mA
I
C
=-100mA, I
B
=-10mA
V
CE
=-6V, I
C
=-2mA
V
CE
=-10V, I
C
=-10mA
V
CB
=-10V, I
E
=0, f=1MHz
Min. Typ. Max.
-50
-
-
120
-
-
-
-
-
-
-
-
-
-0.65
200
4
-
-0.1
-0.1
400
-0.3
-
-
-
Unit
V
μA
μA
-
V
V
MHz
pF
KSD-T5S001-002
2
SUT483J
Electrical Characteristic Curves
[ Tr1 ]
Fig. 1 I
C
-V
BE
Fig. 2 I
C
-V
CE
㎂
Fig. 3 h
FE
-I
C
Fig. 4 V
CE(sat)
-I
C
[ Tr2 ]
Fig. 1 I
C
-V
BE
Fig. 2 I
C
-V
CE
㎂
KSD-T5S001-002
3
SUT483J
Electrical Characteristic Curves
Fig. 3 h
FE
-I
C
Fig. 4 V
CE(sat)
-I
C
KSD-T5S001-002
4
SUT483J
Outline Dimension
※
Recommend PCB solder land
[Unit: mm]
KSD-T5S001-002
5
单片机
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