SUT394EF
Epitaxial planar NPN/PNP silicon transistor
Description
•
Complex type bipolar transistor
Feature
•
Small package save PCB area
•
Reduce quantity of parts and mounting cost
•
Both SBT3906 chip and SBT3904 chip in SOT-563F package
Package : SOT-563F
Ordering Information
Type NO.
SUT394EF
Marking
UX
□
Package Code
SOT-563F
□
: Year & Week Code
Equivalent circuit & PIN Connections
•
Equivalent Circuit
PIN Connections
1
2
3
Tr2
Tr1
6
5
4
1.
2.
3.
4.
5.
6.
Emitter 1
Base 1
Collector 2
Emitter 2
Base 2
Collector 1
Absolute Maximum Ratings
[Tr1, Tr2]
Rating
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
※:
Total rating
(Ta=25°C)
Symbol
Tr1
V
CBO
V
CEO
V
EBO
I
C
P
C
※
T
J
T
stg
60
40
6
200
150
150
-55~150
Unit
Tr2
-40
-40
-5
-200
V
V
V
mA
mW
°C
°C
KSD-T5U006-001
1
SUT394EF
Electrical Characteristics
[ Tr1 ]
Characteristic
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
DC current gain
Collector-Emitter saturation voltage
Transition frequency
Collector output capacitance
Delay time
Rise time
Storage time
Fall Time
(Ta=25°C)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CEX
h
FE
V
CE(sat)
f
T
C
ob
t
d
t
r
t
stg
Test Condition
I
C
=10μA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=10μA, I
C
=0
V
CE
=30V, V
EB
=3V
V
CE
=1V, I
C
=10mA
I
C
=50mA, I
B
=5mA
V
CE
=20V, I
C
=10mA,
f=100MHz
V
CB
=5V, I
E
=0, f=1MHz
Min. Typ. Max.
60
40
6
-
100
-
300
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
50
300
0.3
-
4
35
35
200
50
Unit
V
V
V
nA
-
V
MHz
pF
ns
ns
ns
ns
<
t
f
-
Electrical Characteristics
[ Tr2 ]
Characteristic
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
DC current gain
Collector-Emitter saturation voltage
Transition frequency
Collector output capacitance
Delay time
Rise time
Storage time
Fall Time
(Ta=25°C)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CEX
h
FE
V
CE(sat)
f
T
C
ob
t
d
t
r
t
stg
Test Condition
I
C
=-10μA, I
E
=0
I
C
=-1mA, I
B
=0
I
E
=-10μA, I
C
=0
V
CE
=-30V, V
EB
=-3V
V
CE
=-1V, I
C
=-10mA
I
C
=-50mA, I
B
=-5mA
V
CE
=-20V, I
C
=-10mA,
f=100MHz
V
CB
=-5V, I
E
=0, f=1MHz
Min. Typ. Max.
-40
-40
-5
-
100
-
250
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-50
300
-0.4
-
4.5
35
35
225
75
Unit
V
V
V
nA
-
V
MHz
pF
ns
ns
ns
ns
<
t
f
-
KSD-T5U006-001
2
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