SUT101N
Epitaxial planar PNP/NPN silicon transistor
Descriptions
•
Complex type bipolar transistor
Features
•
Reduce quantity of parts and mounting cost
•
High collector power dissipation : P
C
=500mW(Max.)
Package : SOT-26
Ordering Information
Type NO.
SUT101N
◇:
Hfe rank,
Marking
VX◇
□
Package Code
SOT-26
□
: Year & Week Code
PIN Assignment & Description
6
Tr1
5
4
Pin
1
Tr2
Description
Base(Tr 1)
Emitter(Tr 1/Tr 2)
Base(Tr 2)
Collector(Tr 2)
-
Collector(Tr 1)
2
3
4
1
2
[Pin Assignment]
3
5
6
Absolute Maximum Ratings
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Storage temperature range
* : Single pulse, tp= 300
㎲
** : Total rating(Each terminal mounted on a recommended solder land)
KSD-T5P005-001
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
*
P
C
**
T
J
T
stg
Rating
Tr1
Tr2
-40
-32
-5
-1
-2
0.5
150
-55~150
40
32
5
1
2
Unit
V
V
V
A(DC)
A(Pulse)
W
°C
°C
1
SUT101N
Electrical Characteristics
[Tr1]
Characteristic
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-Emitter saturation voltage
Transition frequency
Collector output capacitance
(Ta=25°C)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
I
EBO
h
FE
V
CE(sat)
f
T
C
ob
Test Condition
I
C
=-50uA, I
E
=0
I
C
=-1mA, I
B
=0
I
C
=-50uA, I
C
=0
V
CB
=-20V, I
E
=0
V
CE
=-30V, I
C
=0
V
EB
=-4V, I
C
=0
V
CE
=-3V, I
C
=-0.1A
I
C
=-500mA, I
B
=-50mA
V
CE
=-5V,I
C
=-50mA,f=30Mhz
V
CB
=-10V, I
E
=0, f=1MHz
Min. Typ. Max.
-40
-32
-5
-
-
-
100
-
-
-
-
-
-
-
-
-
-
-0.2
150
20
-
-
-
-0.1
-0.1
-0.1
320
-0.8
-
30
Unit
V
V
V
μA
μA
μA
-
V
MHz
pF
* h
FE
rank / O: 100~ 200, Y: 160~ 320
Electrical Characteristics
[Tr2]
Characteristic
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-Emitter saturation voltage
Transition frequency
Collector output capacitance
(Ta=25°C)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
*
V
CE(sat)
f
T
C
ob
Test Condition
I
C
=50
㎂
, I
E
=0
I
C
=1
㎃
, I
B
=0
I
E
=50
㎂
, I
C
=0
V
CB
=20V, I
E
=0
V
EB
=4V, I
C
=0
V
CE
=3V, I
C
=0.1A
I
C
=500
㎃
, I
B
=50
㎃
V
CE
=5V, I
C
=50
㎃
V
CB
=10V, I
E
=0, f=1
㎒
Min. Typ. Max.
40
32
5
-
-
100
-
-
-
-
-
-
-
-
-
0.15
150
15
-
-
-
0.5
0.5
320
0.4
-
-
Unit
V
V
V
㎂
㎂
-
V
㎒
㎊
* : h
FE
rank / O : 100 ~ 200, Y : 160 ~ 320
KSD-T5P005-001
2
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