SUT041N
Dual NPN Bipolar transistor
Descriptions
•
General purpose amplifier
•
Recommended for LED Drive Application
Features
•
Reduce quantity of parts and mounting cost
•
Low saturation: V
CE
(sat)= 0.5V Max
•
2 NPN chips in SOT-26 Package
Package : SOT-26
Ordering Information
Type NO.
SUT041N
Marking
41
□
Package Code
SOT-26
□
: Year & Week Code
PIN Assignment & Description
6
5
4
Pin
1
Tr2
Tr1
Description
Emitter 1
Base 1
Collector 2
Emitter 2
Base 2
Collector 1
2
3
4
5
1
2
[Pin Assignment]
3
6
KSD-T5P009-000
1
SUT041N
Absolute maximum ratings(TR1, TR2)
Characteristic
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
* : Single pulse, tp= 300
㎲
** : Total rating(Each terminal mounted on a recommended solder land)
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
*
P
C
**
T
J
T
stg
Ratings
45
40
5
1
2
0.5
150
-55~150
Unit
V
V
V
A(DC)
A(Pulse)
W
°C
°C
Electrical Characteristics(TR1, TR2)
Characteristic
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-Emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
*
V
CE(sat)
f
T
C
ob
*
Test Condition
I
C
=100μA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=10μA, I
C
=0
V
CB
=45V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=1V, I
C
=100mA
I
C
=500mA, I
B
=50mA
V
CE
=5V, I
C
=10mA
V
CB
=10V, I
E
=0, f=1MHz
Min.
45
40
5
-
-
160
-
-
-
Typ. Max.
-
-
-
-
-
-
-
150
8
-
-
-
0.1
0.1
320
0.5
-
-
Unit
V
V
V
μA
μA
-
V
MHz
pF
* Note 1) hFE Rank : 160~320 only
* Note 2) Pulse Tester : Pulse Width
≤300μs,
Duty Cycle
≤2.0%
KSD-T5P009-000
2
微控制器 MCU
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