SUM202MN
P-Channel MOSFET + PNP BJT
Integrated Power MOSFET
with PNP Low V
CE(sat)
Switching Transistor
DFN-8
This integrated device represents a new level of safety and
board−space reduction by combining the 20V P−Channel FET with a
PNP Silicon Low V
CE
(sat) switching transistor. This newly integrated
product provides higher efficiency and accuracy for battery powered
portable electronics.
BV
DSS
1
8
MOSFET
R
DS(ON)
Typ.
48mΩ
@ VGS=-4.5V
65mΩ
@ VGS=-2.5V
I
D
Max
Features
•
Low R
DS
(on) (MOSFET) and Low V
CE
(sat) (Transistor)
Logic Level Gate Drive (MOSFET)
Performance DFN Package
This is a Halogen−Free Device
•
Higher Efficiency Extending Battery Life
•
•
•
-20V
-5.3A
PNP BJT
BV
CEO
-12V
BV
EBO
.
-5V
I
C
Max
-5A
Applications
•
Power Management in Portable and Battery−Powered Products; i.e.,
Cellular and Cordless Telephones and PCMCIA Cards
Marking Diagram
1
Ordering Information
Device
SUM202MN
Marking
SUM202
Package
DFN8
SUM202
YMM
Column 1 : Device Code
Column 2 : Date Code (year, month)
Simple Schematic
1
2
3
4
8
7
6
5
KSD-T6T001-001
PIN Connection
Emitter
8
Collector
7
1
N/C
2
Collector
3
Source
Drain
4
Drain
Bottom View
1
Base
N/C
6
Gate
5
SUM202MN
Absolute maximum ratings for P-Ch MOSFET
Characteristic
Drain-source voltage
Gate-source voltage
Drain current (DC)
(Note.1)
Drain current (Pulsed)
Continuous Source current
Total Power dissipation
(Note.1)
(Ta=25C)
Symbol
V
DSS
V
GSS
I
D
I
DP
I
S
P
D
T
A
=25℃
T
A
=85℃
T
J
, T
stg
T
A
=25℃
T
A
=85℃
Rating
5sec
-20
12
-5.3
-3.8
20
-5.3
2.5
1.3
-55 ~ 150
-3.9
1.3
0.7
-3.9
-2.8
Steady State
Unit
V
V
A
A
A
A
W
W
C
Operating Junction and
Storage Temperature Range
Absolute maximum ratings for PNP Transistor
Characteristic
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current – continuous
Peak Collector current
(Ta=25C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
Rating
-15
-12
-5
-5
-15
Unit
V
V
V
A
A
Thermal Characteristics for P-Ch MOSFET
Characteristic
Junction to Ambient
(Note.5)
Symbol
R
TH(J-A)
R
TH(J-F)
Condition
t≤ 5 sec
Steady State
Steady State
Typ.
40
80
15
Max.
50
95
20
Unit
℃
/W
℃
/W
Junction to Foot (Drain)
Thermal Characteristics for PNP Transistor
Characteristic
Total Device Dissipation
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead #1
Total Device Dissipation (Single Pulse < 10 sec)
Junction and Storage Temperature Range
Symbol
P
D (Note.2)
R
TH(J-A) (Note.2)
P
D (Note.3)
R
TH(J-A) (Note.3)
R
TH(J-L)
P
Dsingle (Note.3&4)
T
J
, T
stg
Max.
635
200
1.35
90
15
2.75
-55 ~ 150
Unit
mW
℃
/W
W
℃/W
℃
/W
W
℃
1. Surface Mounted on FR4 Board using 1in square pad size (Cu area =1.27 in square [1 oz] including traces)
2.
FR−4 @ 100 mm
2
, 1 oz copper traces.
3.
FR−4 @ 500 mm
2
, 1 oz copper traces.
4.
Thermal response.
KSD-T6T001-001
2
SUM202MN
Electrical Characteristics for P-Ch MOSFET
Characteristic
Static
Drain-source breakdown voltage
Gate threshold voltage
Drain-source cut-off current
Gate leakage current
On-State Drain Current
(Note.6)
(Ta=25C)
Symbol Test Condition
BV
DSS
V
GS(th)
I
DSS
I
GSS
I
D(ON)
R
DS(ON)
I
D
=-250A, V
GS
=0
I
D
=-250A, V
DS
=V
GS
V
DS
=-20V, V
GS
=0V
V
DS
=0V, V
GS
=12V
V
DS
≤
-5.0V, V
GS
=-4.5V
V
GS
=-3.6V, I
D
=-1.0A
V
GS
=-2.5V, I
D
=-1.0A
V
DS
=-10V, I
D
=-3.9A
I
S
=-2.1A, V
GS
=0V
Min.
-20
-0.6
-
-
-20
-
-
-
-
Typ.
-
Max.
-
-1.2
Unit
V
V
A
nA
A
m
-
-
-
50
70
12
-0.8
-1
100
-
60
83
-
-1.2
Drain-source on-resistance
(Note.6)
Forward transfer conductance
Diode Forward Voltage
(Note.6)
(Note.6)
g
fs
V
SD
S
V
Dynamic
(Note.7)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
V
DD
=-10V, V
GS
=-4.5V
I
D
=-3.9A
V
DD
=-10V, I
D
=-1.0A
R
G
=6Ω, R
D
=10Ω
V
GS
=-4.5V
V
GS
=0V, V
DS
=-5V,
f=1MHz
-
-
-
-
-
-
-
-
-
-
710
400
140
14
22
42
35
9.7
1.2
3.6
-
-
-
30
55
100
70
22
-
-
nC
ns
pF
5. Surface Mounted on FR4 Board using 1 inch square pad size (Cu area =1.27 inch square [1 oz] including traces).
6. Pulse Test : Pulse Width≤ 300us, Duty Cycle≤2%.
7. Guaranteed by design, not subject to production testing.
KSD-T6T001-001
3
SUM202MN
Electrical Characteristics for PNP Transistor
Characteristic
Off Characteristics
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
Emitter cut-off current
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
I
C
=-50A, I
E
=0
I
C
=-1mA, I
B
=0
I
E
=-50A, I
C
=0
V
CB
=-15V, I
E
=0
V
EB
=-5V, I
C
=0
-15
-12
-5
-
-
-
-
-
-
-
-
-
-
-1
-1
V
V
V
A
A
(Ta=25C)
Symbol Test Condition
Min.
Typ.
Max.
Unit
On Characteristics
DC current gain
(Note.8)
h
FE*
(Note.8)
V
CE
=-2V, I
C
=-500mA
V
CE
=-2V, I
C
=-500mA
I
C
=-3A, I
B
=-150mA
V
CB
=-5V, I
C
=-500mA
V
CB
=-10V, I
E
=0, f=1MHz
160
-
-
-
-
-
-
-0.2
150
-
320
-1
-0.5
-
50
-
V
V
MHz
pF
Base-Emitter on voltage
V
BE(on)
V
CE(sat)
f
T
C
ob
Collector-Emitter saturation
voltage
(Note.8)
Transition frequency
Collector output capacitance
8. Pulse Test : Pulse Width≤ 300us, Duty Cycle≤ 2%.
KSD-T6T001-001
4
SUM202MN
Electrical Characteristic Curves
(P-Channel MOSFET)
Fig. 1 I
D
- V
DS
℃
Fig. 2 I
D
- V
GS
-
-
-
m
-
-
Fig. 3 R
DS(on)
- I
D
a
℃
-
Fig. 4 I
S
- V
SD
-
-
Fig. 5 Capacitance - V
DS
Fig. 6 V
GS
- Q
G
℃
KSD-T6T001-001
5
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