< L/S band internally matched power GaAs FET >
MGFS45V2735
2.7 – 3.5 GHz BAND / 30W
DESCRIPTION
The MGFS45V2735 is an internally impedance-matched
GaAs power FET especially designed for use in 2.7 - 3.5
GHz band amplifiers. The hermetically sealed metal-ceramic
package guarantees high reliability.
OUTLINE
24 +/- 0.3
unit : m m
2MIN
FEATURES
Class A operation
Internally matched to 50(ohm) system
High output power
P1dB=30W (TYP.) @f=2.7 - 3.5GHz
High power gain
GLP=12.0dB (TYP.) @f=2.7 - 3.5GHz
High power added efficiency
P.A.E.=36% (TYP.) @f=2.7 - 3.5GHz
Low distortion [item -51]
IM3=-45dBc (TYP.) @Po=34.5dBm S.C.L
(1)
R1.2
0.6 +/- 0.15
17.4 +/- 0.2
8.0 +/- 0.2
(2)
2MIN
(3)
20.4 +/- 0.2
0.1 +/- 0.05
APPLICATION
16.7
4.3 +/- 0.4
QUALITY
IG
RECOMMENDED BIAS CONDITIONS
VDS=10V
ID=8A
RG=25ohm
1.4
Absolute maximum ratings
Symbol
VGDO
VGSO
ID
IGR
IGF
PT *1
Tch
Tstg
GF-38
(Ta=25C)
(1) gate
(2) source(flange)
(3)drain
Parameter
Gate to drain breakdown voltage
Gate to source breakdown voltage
Drain current
Reverse gate current
Forward gate current
Total power dissipation
Cannel temperature
Storage temperature
Ratings
-15
-15
20
-80
168
150
175
-65 to +175
Unit
V
V
A
mA
mA
W
C
C
Keep Safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum
effort into making semiconductor products better
and more reliable , but there is always the
possibility that trouble may occur with them.
Trouble with semiconductors may lead to personal
injury , fire or property damage. Remember to give
due consideration to safety when making your
circuit designs , with appropriate measure such
as (I) placement of substitutive , auxiliary circuits ,
(ii) use of non-flammable material or (iii) prevention
against any malfunction or mishap.
*1 : Tc=25C
Electrical characteristics
Symbol
IDSS
gm
VGS(off)
P1dB
GLP
ID
P.A.E.
IM3 *2
Rth(ch-c) *3
(Ta=25C)
Parameter
Saturated drain current
Transconductance
Gate to source cut-off voltage
Output power at 1dB gain compression
Test conditions
Min.
VDS=3V,VGS=0V
VDS=3V,ID=8A
VDS=3V,ID=160mA
VDS=10V,ID(RF off)=8.0A
f=2.7 – 3.5GHz
-
-
-2
44
11
-
-
-42
delta Vf method
-
Limits
Typ.
24
8
-
45
12
8
36
-45
0.8
Unit
Max.
-
-
-5
-
-
-
-
-
1
A
S
V
dBm
dB
A
%
dBc
C/W
Linear Power Gain
Drain current
Power added efficiency
3rd order IM distortion
Thermal resistance
*2 :item -51 ,2 tone test,Po=34.5dBm Single Carrier Level ,f=2.7,3.1,3.5GHz,delta f=10MHz
*3 :Channel-case
Publication Date : Apr., 2011
1
2.4 +/- 0.2
item 01 : 2.7 - 3.5 GHz band power amplifier
item 51 : 2.7 - 3.5 GHz band digital radio communication
< L/S band internally matched power GaAs FET >
MGFS45V2735
2.7 – 3.5 GHz BAND / 30W
Keep safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more
reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors
may lead to personal injury, fire or property damage. Remember to give due consideration to safety when
making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary
circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap.
Notes regarding these materials
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© 2011 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED.
Publication Date : Apr., 2011
3
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