Silicon RF Power Semiconductors
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD07MVS2
0.2+/-0.05
(0.22)
RoHS Compliance,Silicon MOSFET Power Transistor,175MHz,520MHz,7W
DESCRIPTION
RD07MVS2 is a MOS FET type transistor
specifically designed for VHF/UHF RF power
amplifiers applications.
This device has an internal monolithic zener
diode from gate to source for ESD protection.
OUTLINE DRAWING
6.0+/-0.15
4.6+/-0.05
3.3+/-0.05
0.8+/-0.05
1
4.9+/-0.15
1.0+/-0.05
2
FEATURES
High power gain:
Pout>7W, Gp>10dB@Vdd=7.2V,f=520MHz
High Efficiency: 60%typ. (175MHz)
High Efficiency: 55%typ. (520MHz)
Integrated gate protection diode
(0.25)
3
INDEX MARK
(Gate)
(0.22)
(0.25)
0.2+/-0.05
0.9+/-0.1
Terminal No.
1.Drain (output)
2.Source (GND)
3.Gate (input)
Note
( ):center value
UNIT:mm
APPLICATION
For output stage of high power amplifiers
In VHF/UHF band mobile radio sets.
RoHS COMPLIANT
RD07MVS2-101,T112 is a RoHS compliant products. RoHS compliance is indicating by the letter “G” after the
Lot Marking. This product includes the lead in high melting temperature type solders.
How ever, it applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders (i.e.tin-lead solder alloys containing more than85% lead.)
RD07MVS2
17 Aug 2010
1/10
3.5+/-0.05
2.0+/-0.05
Silicon RF Power Semiconductors
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD07MVS2
UNIT
V
V
W
W
A
°C
°C
°C/W
RoHS Compliance,Silicon MOSFET Power Transistor,175MHz,520MHz,7W
ABSOLUTE MAXIMUM RATINGS
SYMBOL
VDSS
VGSS
Pch
Pin
ID
Tch
Tstg
Rth j-c
PARAMETER
Drain to source voltage
Gate to source voltage
Channel dissipation
Input Power
Drain Current
Junction Temperature
Storage temperature
Thermal resistance
CONDITIONS
Vgs=0V
Vds=0V
Tc=25
°C
Zg=Zl=50
Ω
-
-
-
Junction to case
(Tc=25°C UNLESS OTHERWISE NOTED)
RATINGS
30
-5/+10
50
1.5
3
150
-40 to +125
2.5
D
G
S
SCHEMATIC DRAWING
Note: Above parameters are guaranteed independently.
ELECTRICAL CHARACTERISTICS
SYMBOL
I
DSS
I
GSS
V
TH
Pout1
ηD1
Pout2
ηD2
PARAMETER
Zero gate voltage drain current
Gate to source leak current
Gate threshold Voltage
Output power
Drain efficiency
Output power
Drain efficiency
Load VSWR tolerance
(Tc=25
°C
, UNLESS OTHERWISE NOTED)
CONDITIONS
V
DS
=17V, V
GS
=0V
V
GS
=10V, V
DS
=0V
V
DS
=12V, I
DS
=1mA
f=175MHz , V
DD
=7.2V
Pin=0.3W,Idq=700mA
f=520MHz , V
DD
=7.2V
Pin=0.7W,Idq=750mA
V
DD
=9.2V,Po=7W(Pin Control)
f=175MHz,Idq=700mA,Zg=50
Ω,
Load VSWR=20:1(All Phase)
V
DD
=9.2V,Po=7W(Pin Control),
f=520MHz,Idq=750mA,Zg=50
Ω,
Load VSWR=20:1(All Phase)
MIN
-
-
1.4
7
55
7
50
LIMITS
UNIT
TYP MAX.
-
200
uA
-
1
uA
1.7
2.4
V
8
-
W
60
-
%
8
-
W
55
-
%
No destroy
-
Load VSWR tolerance
No destroy
-
Note : Above parameters , ratings , limits and conditions are subject to change.
RD07MVS2
17 Aug 2010
2/10
Silicon RF Power Semiconductors
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD07MVS2
Vgs-Ids CHARACTERISTICS
Ta=+25°C
Vds=10V
RoHS Compliance,Silicon MOSFET Power Transistor,175MHz,520MHz,7W
TYPICAL CHARACTERISTICS
60
CHANNEL DISSIPATION Pch(W)
...
50
40
30
20
10
0
0
40
80
120
160
200
AMBIENT TEMPERATURE Ta(deg:C.)
On PCB(*1)
with throgh hole
and Heat-sink
CHANNEL DISSIPATION VS.
AMBIENT TEMPERATURE
*1:The material of the PCB
Glass epoxy (t=0.6 mm)
On PCB(*1) with Heat-sink
10.0
8.0
Ids(A),GM(S)
6.0
4.0
2.0
0.0
0
1
2
3
Vgs(V)
4
5
Ids
GM
Vds-Ids CHARACTERISTICS
10
9
8
7
6
Ids(A)
5
4
3
2
1
0
0
2
4
6
Vds(V)
8
10
Vgs=3V
Vgs=3.5V
Vgs=4V
Vgs=4.5V
Ta=+25°C
Vgs=5V
Vds VS. Ciss CHARACTERISTICS
160
140
120
Ciss(pF)
100
80
60
40
20
0
0
5
10
Vds(V)
15
20
Ta=+25°C
f=1MHz
Vds VS. Coss CHARACTERISTICS
120
100
80
Coss(pF)
Crss(pF)
60
40
20
0
0
5
10
Vds(V)
15
20
Ta=+25°C
f=1MHz
Vds VS. Crss CHARACTERISTICS
20
18
16
14
12
10
8
6
4
2
0
0
5
10
Vds(V)
15
20
Ta=+25°C
f=1MHz
RD07MVS2
17 Aug 2010
3/10
Silicon RF Power Semiconductors
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD07MVS2
Pin-Po CHARACTERISTICS @f=175MHz
100
Po
RoHS Compliance,Silicon MOSFET Power Transistor,175MHz,520MHz,7W
TYPICAL CHARACTERISTICS
Pin-Po CHARACTERISTICS @f=175MHz
Ta=+25°C
f=175MHz
Vdd=7.2V
Idq=700mA
12.0
Po(dBm) , Gp(dB) , Idd(A)
40
30
Gp
Po
80
η½
10.0
ηd
Pout(W) , Idd(A)
80
ηd(%)
5
4
Idd
60
ηd(%)
40
20
Ｉ½½
8.0
6.0
4.0
Idd
Ta=25°C
f=175MHz
Vdd=7.2V
Idq=700mA
20
10
0
-5
0
5
10 15 20
Pin(dBm)
25
30
60
40
2.0
0.0
0
500
Pin(mW)
20
1000
0
Pin-Po CHARACTERISTICS @f=520MHz
Ta=+25°C
f=520MHz
Vdd=7.2V
Idq=750mA
Pin-Po CHARACTERISTICS @f=520MHz
14.0
100
90
Po
Po(dBm) , Gp(dB) , Idd(A)
40
30
20
10
Po
80
60
ηd(%)
40
20
Ｉ½½
12.0
Pout(W) , Idd(A)
10.0
8.0
6.0
4.0
2.0
Idd
η½
80
Ta=25°C
f=520MHz
Vdd=7.2V
Idq=750mA
ηd
Gp
60
50
40
30
0
0
5
10
15 20
Pin(dBm)
25
30
0
0.0
0.0
0.5
Pin(W)
1.0
1.5
Vdd-Po CHARACTERISTICS
@f=175MHz
30
25
20
Po(W)
15
10
5
0
4
6
8
10
Vdd(V)
12
14
Ta=25°C
f=175MHz
Pin=0.3W
Icq=700mA
Zg=ZI=50 ohm
Po
Vdd-Po CHARACTERISTICS
@f=520MHz
6
5
4
Idd(A)
3
2
1
0
Po(W)
20
17.5
15
Idd
Ta=25°C
f=520MHz
Pin=0.7W
Icq=750mA
Zg=ZI=50 ohm
Po
10
7.5
5
2.5
0
4
6
8
10
Vdd(V)
12
14
2
1
0
RD07MVS2
Idd(A)
17 Aug 2010
12.5
3
4/10
ηd(%)
70
Silicon RF Power Semiconductors
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD07MVS2
RoHS Compliance,Silicon MOSFET Power Transistor,175MHz,520MHz,7W
TYPICAL CHARACTERISTICS
V gs -Ids CHARACTERISTICS 2
10
8
6
Ids(A)
4
2
0
2
3
V gs(V )
4
5
V ds=10V
Tc=-25~+75°C
-25°C
+25°C
+75°C
RD07MVS2
17 Aug 2010
5/10
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