Silicon RF Power Semiconductors
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD07MUS2B
7W
0.2+/-0.05
RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz
DESCRIPTION
RD07MUS2B is a MOS FET type transistor
specifically designed for VHF/UHF/870MHz
RF power amplifiers applications.
OUTLINE DRAWING
6.0+/-0.15
(0.22)
4.6+/-0.05
3.3+/-0.05
0.8+/-0.05
1
4.9+/-0.15
1.0+/-0.05
High power gain and High Efficiency.
Typical
Po
Gp
ηD
(175MHz) 7.2W 13.8dB 65%
(527MHz)
8W 13.0dB
63%
(870MHz)
7W 11.5dB
58%
Integrated gate protection diode.
2
3
(0.25)
(0.25)
INDEX MARK
(Gate)
Terminal No.
1.Drain (output)
2.Source (GND)
3.Gate (input)
Note
( ):center value
UNIT:mm
For output stage of high power amplifiers in
VHF/UHF/800MHz-band mobile radio sets.
RoHS COMPLIANT
RD07MUS2B is a RoHS compliant product.
RoHS compliance is indicating by the letter “G” after the Lot
Marking. This product includes the lead in high melting temperature type solders.
However, it is applicable to the following exceptions of RoHS Directions.
1. Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.)
ABSOLUTE MAXIMUM RATINGS
SYMBOL
VDSS
VGSS
Pch
Pin
ID
Tch
Tstg
Rth j-c
PARAMETER
Drain to source voltage
Gate to source voltage
Channel dissipation
Input Power
Drain Current
Junction Temperature
Storage temperature
Thermal resistance
(Tc=25°C UNLESS OTHERWISE NOTED)
RATINGS
25
-5/+10
50
0.8*
3
150
-40 to +125
2.5
UNIT
V
V
W
W
A
°C
°C
°C/W
CONDITIONS
Vgs=0V
Vds=0V
Tc=25
°C
Zg=Zl=50
-
-
-
Junction to case
Note: Above parameters are guaranteed independently.
*: 175MHz spec. is 0.6W
ELECTRICAL CHARACTERISTICS
SYMBOL
I
DSS
I
GSS
V
TH
Pout1
D1
Pout2
D2
Pout3
D3
PARAMETER
Drain cutoff current
Gate cutoff current
Gate threshold Voltage
Output power
Drain efficiency
Output power
Drain efficiency
Output power
Drain efficiency
(Tc=25
°C
, UNLESS OTHERWISE NOTED)
CONDITIONS
V
DS
=17V, V
GS
=0V
V
GS
=5V, V
DS
=0V
V
DS
=7.2V, I
DS
=1mA
f=175MHz,V
DD
=7.2V
Pin=0.3W,Idq=250mA
f=527MHz ,V
DD
=7.2V
Pin=0.4W,Idq=250mA
f=870MHz ,V
DD
=7.2V
Pin=0.5W,Idq=250mA
V
DD
=9.5V,Po=7W(Pin Control)
f=527MHz,Idq=250mA,Zg=50
Load VSWR=20:1(All Phase)
***
0.2+/-0.05
0.9+/-0.1
APPLICATION
MIN
-
-
0.5
-
-
7**
58**
-
-
LIMITS
TYP
MAX.
-
10
-
1
1
1.5
7.2*
-
65*
-
8**
-
63**
-
7***
-
58***
-
No destroy
UNIT
uA
uA
V
W
%
W
%
W
%
-
VSWRT Load VSWR tolerance
Note: Above parameters, ratings, limits and conditions are subject to change.
* At 135-175MHz broad matching
** At 450-527MHz broad matching
RD07MUS2B
At 763-870MHz broad matching
23 Dec 2010
1/17
(0.22)
3.5+/-0.05
2.0+/-0.05
FEATURES
Silicon RF Power Semiconductors
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD07MUS2B
7W
V
GS
-I
DS
CHARACTERISTICS
7
Ta=+25°C
V
DS
=10V
RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz
TYPICAL CHARACTERISTICS
(These are only typical curves and devices are not necessarily guaranteed at these curves.)
V
DS
-I
DS
CHARACTERISTICS
7
6
5
I
DS
(A),g
m
(S)
I
DS
(A)
3.5V 3V
Ta=+25°C
2.5V
6
5
4
3
2
1
V
GS
=1.5V
0
0
4
3
2
1
0
0
2
4
V
DS
(V)
6
8
10
2V
g
m
I
DS
0.5
1
1.5
V
GS
(V )
2
2.5
3
V
DS
V S. Ciss CHARACTERISTICS
160
140
120
100
Ciss(pF)
V
DS
VS. Coss CHARACTERISTICS
120
Ta=+25°C
f=1MHz
Ta=+25°C
f=1MHz
100
80
Coss(pF)
80
60
40
20
0
0
5
10
V
DS
(V)
15
20
60
40
20
0
0
5
10
V
DS
(V)
15
20
V
DS
V S. Crss CHARACTERISTICS
20
18
16
14
Crss(pF)
Ta=+25°C
f =1MHz
12
10
8
6
4
2
0
0
5
10
V
DS
(V)
15
20
RD07MUS2B
23 Dec 2010
2/17
Silicon RF Power Semiconductors
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD07MUS2B
7W
f-Po CHARACTERISTICS @f=135-175MHz
10
Po
100
RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz
TYPICAL CHARACTERISTICS ( 135-175MHz )
(These are only typical curves and devices are not necessarily guaranteed at these curves.)
50
f-Po CHARACTERISTICS @f=135-175M Hz
100
Po
Po(dBm) , Gp(dB) , Idd(A)
40
80
Pout(W) , Idd(A)
8
80
ηd(%)
30
20
Gp
40
4
Idd
Ta=+25°C
Vdd=7.2V
Pin=0.3W
Idq=250mA
40
10
Idd
20
2
20
0
0
135 140 145 150 155 160 165 170 175
f (MHz)
0
0
135 140 145 150 155 160 165 170 175
f (MHz)
50
Pin-Po CHARACTERISTICS @f=175MHz
100
Pin-Po CHARACTERISTICS @f=175MHz
10
Po
8
Pout(W) , Idd(A)
100
Po
Po(dBm) , Gp(dB) , Idd(A)
40
ηd
80
80
ηd
Ta=+25°C
f =175MHz
Vdd=7.2V
Idq=250mA
Idd
30
60
ηd(%)
20
Ta=+25°C
f=175MHz
Vdd=7.2V
Idq=250mA
Gp
40
4
40
10
20
Idd
0
2
20
0
0
5
10
15
20
Pin(dBm)
25
30
0
0
0.2
0.4
Pin(W)
0.6
0.8
0
Vdd-Po CHARACTERISTICS @f=175MHz
25
Ta=+25°C
f=175MHz
Pin=0.3W
Idq=250mA
Zg=ZI=50 ohm
Po
5
10
Vgg-Po CHARACTERISTICS @f=175MHz
5
Ta=+25°C
f =175MHz
Pin=0.3W
Idq=250mA
Zg=ZI=50 ohm
20
4
8
Po
4
Po(W)
Idd(A)
Po(W)
10
Idd
2
4
Idd
2
5
1
2
1
0
3
4
5
6
7
Vdd(V)
8
9
10
0
0
0
0.4
0.8
1.2
Vgg(V)
1.6
2
0
RD07MUS2B
23 Dec 2010
3/17
Idd(A)
15
3
6
3
ηd(%)
6
60
ηd(%)
ηd
Ta=+25°C
Vdd=7.2V
Pin=0.3W
Idq=250mA
60
6
ηd
60
Silicon RF Power Semiconductors
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD07MUS2B
7W
10
f-Po CHARACTERISTICS @f=450-527M Hz
Po
100
RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz
TYPICAL CHARACTERISTICS ( 450-527MHz )
(These are only typical curves and devices are not necessarily guaranteed at these curves.)
50
f-Po CHARACTERISTICS @f=450-527MHz
Po
100
Po(dBm) , Gp(dB) , Idd(A)
40
80
Pout(W) , Idd(A)
8
80
ηd(%)
ηd
20
Gp
10
Idd
40
4
Idd
Ta=+25°C
Vdd=7.2V
Pin=0.4W
Idq=250mA
40
20
2
20
0
0
450 460 470 480 490 500 510 520 530
f (MHz)
50
Pin-Po CHARACTERISTICS @f=527MHz
100
Ta=+25°C
f=527MHz
Vdd=7.2V
Idq=250mA
Po
80
Pout(W) , Idd(A)
0
0
450 460 470 480 490 500 510 520 530
f (MHz)
10
Pin-Po CHARACTERISTICS @f=527MHz
Po
8
80
100
Po(dBm) , Gp(dB) , Idd(A)
40
ηd(%)
ηd
20
Gp
40
4
Idd
Ta=+25°C
f=527MHz
Vdd=7.2V
Idq=250mA
40
10
Idd
0
0
5
10
15
20
Pin(dBm)
25
30
20
2
20
0
0
0.0
0.2
0.4
Pin(W)
0.6
0
0.8
Vdd-Po CHARACTERISTICS @f=527MHz
25
Ta=+25°C
f=527MHz
Pin=0.4W
Idq=250mA
Zg=ZI=50 ohm
Po
5
10
Vgg-Po CHARACTERISTICS @f=527MHz
5
Ta=+25°C
f=527MHz
Pin=0.4W
Idq=250mA
Zg=ZI=50 ohm
Po
4
20
4
8
Po(W)
Idd(A)
15
3
Po(W)
10
Idd
5
2
4
Idd
2
2
1
1
0
3
4
5
6
7
Vdd(V)
8
9
10
0
0
0
0.4
0.8
1.2
Vgg(V)
1.6
2
0
RD07MUS2B
23 Dec 2010
4/17
Idd(A)
6
3
ηd(%)
30
60
6
ηd
60
ηd(%)
30
Ta=+25°C
Vdd=7.2V
Pin=0.4W
Idq=250mA
60
6
ηd
60
Silicon RF Power Semiconductors
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD07MUS2B
7W
f-Po CHARACTERISTICS @f=763-870MHz
10
Po
Ta=+25°C
Vdd=7.2V
Pin=0.5W
Idq=250mA
100
RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz
TYPICAL CHARACTERISTICS ( 763-870MHz )
(These are only typical curves and devices are not necessarily guaranteed at these curves.)
f-Po CHARACTERISTICS @f=763-870MHz
50
Po
Po(dBm) , Gp(dB) , Idd(A)
100
40
80
Pout(W) , Idd(A)
8
80
30
Ta=+25°C
Vdd=7.2V
Pin=0.5W
Idq=250mA
η
½
60
ηd(%)
6
ηd
4
Idd
60
ηd(%)
20
40
Gp
20
40
10
Idd
2
20
0
0
760 780 800 820 840 860 880 900 920 940 960
f (MHz)
0
0
760 780 800 820 840 860 880 900 920 940 960
f (MHz)
50
Pin-Po CHARACTERISTICS @f=870MHz
Ta=+25°C
f =870MHz
Vdd=7.2V
Idq=250mA
100
10
Pin-Po CHARACTERISTICS @f=870MHz
100
Po(dBm) , Gp(dB) , Idd(A)
40
Po
80
Pout(W) , Idd(A)
8
Po
80
η
½
20
Gp
10
Idd
0
0
5
10
15
20
Pin(dBm)
25
30
0
20
40
ηd(%)
ηd
4
Idd
2
Ta=+25°C
f =870MHz
Vdd=7.2V
Idq=250mA
40
20
0
0.0
0.2
0.4
Pin(W)
0.6
0.8
0
Vdd-Po CHARACTERISTICS @f=870MHz
25
Ta=+25°C
f=870MHz
Pin=0.5W
Idq=250mA
Zg=ZI=50 ohm
5
20
4
Po(W)
10
Idd
2
5
Po
1
0
3
4
5
6
7
Vdd(V)
8
9
10
0
RD07MUS2B
Idd(A)
15
3
23 Dec 2010
5/17
ηd(%)
30
60
6
60
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