Silicon RF Power Semiconductors
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD06HVF1
DRAWING
9.1+/-0.7
1.3+/-0.4
3.6+/-0.2
RoHS Compliance,
DESCRIPTION
Silicon MOSFET Power Transistor 175MHz,6W
OUTLINE
3.2+/-0.4
RD06HVF1 is a MOS FET type transistor specifically
designed for VHF RF power amplifiers applications.
4.8MAX
High power gain:
Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz
9+/-0.4
FEATURES
12.3+/-0.6
2
1.2+/-0.4
0.8+0.10/-0.15
APPLICATION
For output stage of high power amplifiers in
VHF band mobile radio sets.
12.3MIN
1 2 3
0.5+0.10/-0.15
2.5 2.5
3.1+/-0.6
5deg
4.5+/-0.5
RoHS COMPLIANT
9.5MAX
note:
RD06HVF1-101 is a RoHS compliant products.
Torelance of no designation means typical value.
RoHS compliance is indicate by the letter “G” after the lot
Dimension in mm.
marking.
This product include the lead in high melting temperature type solders.
How ever,it applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.)
PINS
1:GATE
2:SOURCE
3:DRAIN
RD06HVF1
6 Jul 2010
1/9
Silicon RF Power Semiconductors
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD06HVF1
RoHS Compliance,
Silicon MOSFET Power Transistor 175MHz,6W
ABSOLUTE MAXIMUM RATINGS
(Tc=25
°C
UNLESS OTHERWISE NOTED)
SYMBOL
V
DSS
V
GSS
Pch
Pin
ID
Tch
Tstg
Rth j-c
PARAMETER
Drain to source voltage
Gate to source voltage
Channel dissipation
Input power
Drain current
Channel temperature
Storage temperature
Thermal resistance
CONDITIONS RATINGS UNIT
Vgs=0V
50
V
Vds=0V
+/- 20
V
Tc=25
°C
27.8
W
Zg=Zl=50
Ω
0.6
W
-
3
A
°C
-
150
-
-40 to +150
°C
°C/W
junction to case
4.5
Note 1: Above parameters are guaranteed independently.
ELECTRICAL CHARACTERISTICS
(Tc=25
°C
, UNLESS OTHERWISE NOTED)
SYMBOL
I
DSS
I
GSS
V
TH
Pout
ηD
PARAMETER
Zero gate voltage drain current
Gate to source leak current
Gate threshold Voltage
Output power
Drain efficiency
Load VSWR tolerance
CONDITIONS
V
DS
=17V, V
GS
=0V
V
GS
=10V, V
DS
=0V
V
DS
=12V, I
DS
=1mA
V
DD
=12.5V, Pin=0.3W,
f=175MHz, Idq=0.3A
V
DD
=15.2V,Po=6W(Pin Control)
f=175MHz,Idq=0.3A,Zg=50
Ω
Load VSWR=20:1(All Phase)
LIMITS
MIN TYP MAX.
-
-
10
-
-
1
1.9
-
4.9
6
10
-
60
65
-
No destroy
UNIT
uA
uA
V
W
%
-
Note : Above parameters , ratings , limits and conditions are subject to change.
RD06HVF1
6 Jul 2010
2/9
Silicon RF Power Semiconductors
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD06HVF1
RoHS Compliance,
Silicon MOSFET Power Transistor 175MHz,6W
TYPICAL CHARACTERISTICS
CHANNNEL DISSIPATION VS.
AMBIENT TEMPERATURE
Vgs-Ids CHARACTERISTICS
5
4
3
2
1
0
Ta=+25°C
Vds=10V
50
CHANNEL DISSIPATION
Pch(W)
40
20
10
0
0
40
80
120 160 200
AMBIENT TEMPERATURE Ta(°C)
Ids(A)
30
0
2
4
6
Vgs(V)
8
10
Vds-Ids CHARACTERISTICS
4
Ta=+25°C
Vgs=10V
Vds VS. Ciss CHARACTERISTICS
60
50
Ciss(pF)
40
30
20
10
0
0
10
Vds(V)
20
30
Ta=+25°C
f=1MHz
3
Ids(A)
Vgs=9V
Vgs=8V
2
Vgs=7V
1
Vgs=6V
Vgs=5V
0
0
2
4
6
Vds(V)
8
10
Vds VS. Coss CHARACTERISTICS
100
80
Coss(pF)
60
40
20
0
0
10
Vds(V)
20
30
Ta=+25°C
f=1MHz
Vds VS. Crss CHARACTERISTICS
10
8
Crss(pF)
6
4
2
0
0
10
Vds(V)
20
30
Ta=+25°C
f=1MHz
RD06HVF1
6 Jul 2010
3/9
Silicon RF Power Semiconductors
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD06HVF1
Pin-Po CHARACTERISTICS
RoHS Compliance,
TYPICAL CHARACTERISTICS
Silicon MOSFET Power Transistor 175MHz,6W
Pin-Po CHARACTERISTICS
50
40
30
20
Gp
Ta=+25°C
f=175MHz
Vdd=12.5V
Idq=0.3A
100
Po
14
Po
100
90
80
ηd(%)
70
ηd
Ta=25°C
f=175MHz
Vdd=12.5V
Idq=0.3A
Idd
12
80
60
40
20
Ｉ½½
Po(dBm) , Gp(dB) , Idd(A)
Pout(W) , Idd(A)
10
8
6
4
2
0
0.0
0.1
0.2
0.3
Pin(W)
0.4
0.5
ηd(%)
η
½
60
50
40
30
0.6
10
0
0
5
10
15
20
Pin(dBm)
25
30
0
Vdd-Po CHARACTERISTICS
16
14
12
10
Po(W)
8
6
4
2
0
4
6
8
10
Vdd(V)
12
14
0
0
0
Idd
Ta=25°C
f=175MHz
Pin=0.3W
Idq=0.3A
Zg=ZI=50 ohm
Vgs-Ids CHARACTORISTICS 2
4
5
4
Vds=10V
Tc=-25~+75°C
-25°C
Ids(A),GM(S)
3
2
1
Idd(A)
+75°C
+25°C
Po
3
2
1
2
4
6
Vgs(V)
8
10
Vgs-
g
m CHARACTORISTICS
2.0
Vds=10V
Tc=-25~+75°C
1.5
g
m(S)
1.0
-25°C
+25°C
0.5
+75°C
0.0
0
1
2
3
4 5
Vgs(V)
6
7
8
9
RD06HVF1
6 Jul 2010
4/9
Silicon RF Power Semiconductors
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD06HVF1
Vdd
RoHS Compliance,
Silicon MOSFET Power Transistor 175MHz,6W
TEST CIRCUIT(f=175MHz)
Vgg
C1
9.1kOHM
L6
8.2kOHM
C3
100OHM
300pF
L1
RF-IN
300pF
L2
L3
L4
C2
175MHz
RD06HVF1
L5
RF-OUT
82pF
10pF
7
25
30
33
52
55
72
75
92
100
C1:2200pF 10uF in parallel
C2:2200pF*2 in parallel
C3:2200pF,330uF in parallel
L1-L3:6Turns,I.D1.6mm,D0.4mm enameled copper wire
L4:1Turns,I.D6mm,D1.6mm silver plateted copper wire
L5:4Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire
L6:4Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire
5
70
87
92
5pF
30pF
100
Note:Board material-Teflon substrate
micro strip line width=4.2mm/50OHM,er:2.7,t=1.6mm
Dimensions:mm
RD06HVF1
6 Jul 2010
5/9
stm32/stm8
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