Silicon RF Power Semiconductors
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD01MUS1
4.4+/-0.1
1.6+/-0.1
LOT No.
φ
1
0.
RoHS Compliance,
DESCRIPTION
Silicon MOSFET Power Transistor 520MHz,1W
OUTLINE DRAWING
1.5+/-0.1
RD01MUS1 is a MOS FET type transistor specifically
designed for VHF/UHF RF amplifiers applications.
TYPE NAME
High power gain:
Pout>0.8W, Gp>14dB @Vdd=7.2V,f=520MHz
High Efficiency: 65%typ.
1
2
1.5+/-0.1
3
1.5+/-0.1
0.4 +0.03
-0.05
Terminal No.
1 : GATE
2 : SOURSE
3 : DRAIN
UNIT : mm
APPLICATION
For output stage of high power amplifiers in VHF/UHF
Band mobile radio sets.
0.4+/-0.07 0.5+/-0.07 0.4+/-0.07
0.1 MAX
RoHS COMPLIANT
RD01MUS1-101,T113 is a RoHS compliant products.
This product include the lead in high melting temperature type solders.
How ever,it applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.)
ABSOLUTE MAXIMUM RATINGS
(Tc=25
°C
UNLESS OTHERWISE NOTED)
SYMBOL
VDSS
VGSS
Pch
Pin
ID
Tch
Tstg
Rth j-c
PARAMETER
Drain to source voltage
Gate to source voltage
Channel dissipation
Input Power
Drain Current
Channel Temperature
Storage temperature
Thermal resistance
CONDITIONS RATINGS UNIT
Vgs=0V
30
V
Vds=0V
+/-10
V
Tc=25
°C
3.6
W
Zg=Zl=50
Ω
100
mW
-
600
mA
°C
-
150
-
-40 to +125
°C
°C/W
Junction to case
34.5
Note: Above parameters are guaranteed independently.
ELECTRICAL CHARACTERISTICS
(Tc=25
°C
, UNLESS OTHERWISE NOTED)
SYMBOL
I
DSS
I
GSS
Vth
Pout
ηD
PARAMETER
Zero gate voltage drain current
Gate to source leak current
Gate threshold Voltage
Output power
Drain efficiency
CONDITIONS
V
DS
=17V, V
GS
=0V
V
GS
=10V, V
DS
=0V
V
DS
=12V, I
DS
=1mA
V
DD
=7.2V, Pin=30mW
f=520MHz,Idq=100mA
MIN
-
-
1.3
0.8
50
LIMITS
TYP
-
-
1.8
1.4
65
UNIT
MAX
50
1
2.3
-
-
uA
uA
V
W
%
Note: Above parameters, ratings, limits and conditions are subject to change.
RD01MUS1
17 Aug 2010
1/7
3.9+/-0.3
FEATURES
0.8 MIN 2.5+/-0.1
Silicon RF Power Semiconductors
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD01MUS1
Vgs-Ids CHARACTERISTICS
1.0
Ta=+25°C
Vds=10V
RoHS Compliance,
TYPICAL CHARACTERISTICS
CHANNEL DISSIPATION VS.
AMBIENT TEMPERATURE
*1:The material of the PCB
Glass epoxy (t=0.6 mm)
Silicon MOSFET Power Transistor 520MHz,1W
4
CHANNEL DISSIPATION Pch(W)
...
3
Ids(A)
On PCB(*1) with Heat-sink
0.8
0.6
0.4
0.2
0.0
2
1
On PCB(*1)
0
0
40
80
120
160
AMBIENT TEMPERATURE Ta(°C)
200
0
1
2
3
Vgs(V)
4
5
Vds-Ids CHARACTERISTICS
2.5
Ta=+25°C
Vgs=10V
Vgs=9V
Vgs=8V
Vgs=7V
Vgs=6V
Vds VS. Ciss CHARACTERISTICS
20
18
16
14
Ciss(pF)
12
10
8
6
4
2
0
0
5
10
Vds(V)
15
20
Ta=+25°C
f=1MHz
2
Ids(A)
1.5
Vgs=5V
1
Vgs=4V
0.5
Vgs=3V
0
0
2
4
6
Vds(V)
8
10
Vds VS. Coss CHARACTERISTICS
20
18
16
14
Coss(pF)
10
8
6
4
2
0
0
5
10
Vds(V)
15
20
0
0
Crss(pF)
12
Ta=+25°C
f=1MHz
Vds VS. Crss CHARACTERISTICS
4
Ta=+25°C
f=1MHz
3
2
1
5
10
Vds(V)
15
20
RD01MUS1
17 Aug 2010
2/7
Silicon RF Power Semiconductors
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD01MUS1
Pin-Po CHARACTERISTICS
RoHS Compliance,
TYPICAL CHARACTERISTICS
Pin-Po CHARACTERISTICS
35
30
Po(dBm) , Gp(dB) , Idd(A)
25
20
15
10
5
0
-10
Ta=+25°C
f=520MHz
Vdd=7.2V
Idq=100mA
Gp
η
½
Po
Silicon MOSFET Power Transistor 520MHz,1W
100
90
Pout(W) , Idd(A)
80
ηd(%)
70
60
50
40
30
0
Pin(dBm)
10
20
2.0
1.8
1.6
1.4
1.0
0.8
0.6
0.4
0.2
0.0
0
20
Pin(mW)
40
60
Idd
Ta=25°C
f=520MHz
Vdd=7.2V
Idq=100mA
Po
100
80
ηd
40
20
0
Vdd-Po CHARACTERISTICS
4.0
3.5
3.0
2.5
Po(W)
2.0
1.5
1.0
0.5
0.0
4
6
8
10
Vdd(V)
12
14
Ta=25°C
f=520MHz
Pin=30mW
Idq=100mA
Zg=ZI=50 ohm
Po
0.8
0.7
0.6
Idd
0.5
0.4
0.3
0.2
0.1
0.0
Idd(A)
RD01MUS1
17 Aug 2010
3/7
ηd(%)
1.2
60
Silicon RF Power Semiconductors
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD01MUS1
RoHS Compliance,
Silicon MOSFET Power Transistor 520MHz,1W
TEST CIRCUIT(f=520MHz)
Vgg
Vdd
C1
18m m
11m m
C2
10uF,50V
5m m
4.7kO HM
4m m
R F-IN
62pF
24pF
240pF
68O HM
3pF
30m m
13m m
R D01MUS1
6.5m m
4m m 5.5m m
3m m
L1
68pF
17.5m m 25.5m m 4m m
R F-O UT
62pF
10pF
L1: Enam eled wire 5Turns,D:0.43m m ,2.46m m O .D
C 1,C2: 1000pF,0.022uF in parallel
Note:Board m aterial-glass epoxi substrate
Micro strip line width=1.0m m /50O HM,er:4.8,t=0.6m m
INPUT/OUTPUT IMPEDANCE VS. FREQUENCY CHARACTERISTICS
520MHz Zin* Zout*
Zo=50Ω
Vdd=7.2V, Idq=100mA(Vgg adj.),Pin=0.03W
520MHz Zin*
Zin* =3.11+j11.56
Zout*=11.64+j4.74
520MHz Zout*
Zin*: Complex conjugate of input impedance
Zout*: Complex conjugate of input impedance
output impedance
RD01MUS1
17 Aug 2010
4/7
Silicon RF Power Semiconductors
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD01MUS1
S12
S22
(ang)
41.3
26.5
16.1
8.4
2.6
-2.4
-6.6
-9.9
-13.3
-14.1
-15.8
-18.5
-21.0
-22.3
-24.9
-25.7
-26.8
-27.8
-27.3
-27.0
-26.3
-23.8
(mag)
0.772
0.687
0.630
0.600
0.588
0.583
0.590
0.597
0.608
0.615
0.622
0.636
0.650
0.666
0.680
0.694
0.711
0.723
0.734
0.749
0.760
0.771
(ang)
-63.0
-83.1
-97.3
-107.1
-114.4
-120.1
-124.6
-128.4
-131.7
-133.1
-134.8
-137.3
-140.1
-142.4
-144.6
-146.8
-148.8
-150.9
-152.9
-154.5
-156.3
-158.2
(mag)
0.043
0.050
0.053
0.054
0.053
0.052
0.051
0.049
0.047
0.046
0.045
0.043
0.041
0.039
0.036
0.033
0.031
0.028
0.026
0.023
0.021
0.018
RoHS Compliance,
Silicon MOSFET Power Transistor 520MHz,1W
RD01MSU1 S-PARAMETER DATA (@Vdd=7.2V, Id=100mA)
Freq.
[MHz]
100
150
200
250
300
350
400
450
500
520
550
600
650
700
750
800
850
900
950
1000
1050
1100
S11
(mag)
0.927
0.875
0.833
0.811
0.798
0.791
0.790
0.788
0.794
0.796
0.798
0.801
0.807
0.813
0.817
0.825
0.831
0.837
0.845
0.851
0.857
0.862
(ang)
-77.0
-101.2
-117.9
-129.5
-138.0
-144.5
-149.7
-154.1
-158.0
-159.2
-161.2
-164.2
-167.0
-169.3
-171.6
-174.0
-176.0
-178.0
-179.9
178.2
176.5
174.7
S21
(mag)
19.536
15.657
12.662
10.427
8.814
7.548
6.541
5.789
5.106
4.876
4.576
4.120
3.714
3.389
3.092
2.820
2.616
2.401
2.207
2.076
1.912
1.773
(ang)
132.3
116.5
105.0
96.2
89.3
83.3
78.2
73.5
69.0
67.5
65.2
61.3
58.0
54.7
51.3
48.6
46.0
42.8
40.9
38.4
35.5
34.0
RD01MSU1 S-PARAMETER DATA (@Vdd=12.5V, Id=100mA)
Freq.
[MHz]
100
150
200
250
300
350
400
450
500
520
550
600
650
700
750
800
850
900
950
1000
1050
1100
S11
(mag)
0.945
0.896
0.856
0.833
0.819
0.810
0.806
0.804
0.808
0.809
0.812
0.813
0.819
0.824
0.827
0.834
0.841
0.845
0.852
0.857
0.864
0.868
(ang)
-72.3
-96.7
-113.9
-126.2
-135.1
-141.9
-147.7
-152.2
-156.4
-157.8
-159.9
-163.0
-166.0
-168.6
-171.0
-173.3
-175.5
-177.4
-179.4
178.6
176.9
175.0
S21
(mag)
19.517
15.937
13.050
10.830
9.194
7.890
6.868
6.084
5.382
5.139
4.831
4.356
3.931
3.597
3.283
2.991
2.779
2.554
2.350
2.209
2.035
1.889
(ang)
135.2
119.5
107.7
98.6
91.6
85.3
80.1
75.3
70.7
69.1
66.7
62.7
59.3
56.0
52.4
49.8
47.1
43.8
41.9
39.4
36.3
34.8
(mag)
0.039
0.046
0.049
0.050
0.050
0.049
0.047
0.046
0.044
0.044
0.042
0.040
0.038
0.036
0.034
0.031
0.029
0.026
0.024
0.022
0.019
0.017
S12
(ang)
44.5
29.2
18.5
11.2
5.0
-0.3
-4.2
-7.7
-11.0
-12.4
-13.7
-16.2
-18.7
-20.8
-22.3
-23.7
-24.6
-25.9
-25.4
-24.3
-23.5
-20.1
(mag)
0.742
0.665
0.612
0.581
0.568
0.565
0.571
0.580
0.591
0.596
0.605
0.618
0.633
0.649
0.664
0.678
0.695
0.708
0.720
0.736
0.747
0.759
S22
(ang)
-57.4
-76.6
-90.6
-100.4
-107.8
-113.8
-118.5
-122.3
-126.1
-127.5
-129.4
-132.2
-135.1
-137.6
-140.1
-142.5
-144.5
-146.7
-148.9
-150.7
-152.4
-154.6
RD01MUS1
17 Aug 2010
5/7
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