Silicon RF Power Semiconductors
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD16HHF1
DRAWING
9.1+/-0.7
1.3+/-0.4
RoHS Compliance,
Silicon MOSFET Power Transistor 30MHz,16W
DESCRIPTION
3.2+/-0.4
RD16HHF1 is a MOS FET type transistor specifically
designed for HF RF power amplifiers applications.
OUTLINE
3.6+/-0.2
4.8MAX
9+/-0.4
High power gain:
Pout>16W, Gp>16dB @Vdd=12.5V,f=30MHz
12.3+/-0.6
FEATURES
2
1.2+/-0.4
0.8+0.10/-0.15
APPLICATION
For output stage of high power amplifiers in
HF band mobile radio sets.
12.3MIN
1 2 3
0.5+0.10/-0.15
2.5 2.5
3.1+/-0.6
5deg
4.5+/-0.5
9.5MAX
note:
RD16HHF1-101 is a RoHS compliant products.
Torelance of no designation means typical value.
RoHS compliance is indicate by the letter “G” after the lot
Dimension in mm.
marking.
This product include the lead in high melting temperature type solders.
How ever,it applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.)
RoHS COMPLIANT
PINS
1:GATE
2:SOURCE
3:DRAIN
RD16HHF1
6 Jul 2010
1/9
Silicon RF Power Semiconductors
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD16HHF1
RoHS Compliance,
Silicon MOSFET Power Transistor 30MHz,16W
ABSOLUTE MAXIMUM RATINGS
(Tc=25
°C
UNLESS OTHERWISE NOTED)
SYMBOL
V
DSS
V
GSS
Pch
Pin
ID
Tch
Tstg
Rth j-c
PARAMETER
Drain to source voltage
Gate to source voltage
Channel dissipation
Input power
Drain to source current
Channel temperature
Storage temperature
Thermal resistance
CONDITIONS RATINGS UNIT
Vgs=0V
50
V
Vds=0V
+/- 20
V
Tc=25
°C
56.8
W
Zg=Zl=50
Ω
0.8
W
-
5
A
°C
-
150
-
-40 to +150
°C
°C/W
junction to case
2.2
Note 1: Above parameters are guaranteed independently.
ELECTRICAL CHARACTERISTICS
(Tc=25
°C
, UNLESS OTHERWISE NOTED)
SYMBOL
I
DSS
I
GSS
V
TH
Pout
ηD
PARAMETER
Zero gate voltage drain current
Gate to source leak current
Gate threshold voltage
Output power
Drain efficiency
Load VSWR tolerance
CONDITIONS
V
DS
=17V, V
GS
=0V
V
GS
=10V, V
DS
=0V
V
DS
=12V, I
DS
=1mA
V
DD
=12.5V, Pin=0.4W,
f=30MHz, Idq=0.5A
V
DD
=15.2V,Po=16W(Pin Control)
f=30MHz,Idq=0.5A,Zg=50
Ω
Load VSWR=20:1(All Phase)
MIN
-
-
1.7
16
55
LIMITS
TYP
MAX.
-
10
-
1
-
4.7
19
-
65
-
No destroy
UNIT
uA
uA
V
W
%
-
Note : Above parameters , ratings , limits and conditions are subject to change.
RD16HHF1
6 Jul 2010
2/9
Silicon RF Power Semiconductors
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD16HHF1
Vgs-Ids CHARACTERISTICS
10
8
6
4
2
0
Vds=10V
Ta=+25°C
RoHS Compliance,
Silicon MOSFET Power Transistor 30MHz,16W
TYPICAL CHARACTERISTICS
80
CHANNEL DISSIPATION
Pch(W)
CHANNNEL DISSIPATION VS.
AMBIENT TEMPERATURE
60
Ids(A)
40
20
0
0
40
80
120 160 200
AMBIENT TEMPERATURE Ta(°C)
0
2
4
6
Vgs(V)
8
10
Vds-Ids CHARACTERISTICS
8
Ta=+25°C
Vgs=10V
Vds VS. Ciss CHARACTERISTICS
60
50
Vgs=9V
6
Ids(A)
40
Vgs=8V
Ciss(pF)
4
Vgs=7V
30
20
10
0
0
10
Vds(V)
20
30
Ta=+25°C
f=1MHz
2
Vgs=6V
0
0
2
4
6
Vds(V)
8
10
Vgs=5V
Vds VS. Coss CHARACTERISTICS
100
Ta=+25°C
Ta=+25°C
80 f=1MHz
f=1MHz
Coss(pF)
60
40
20
0
0
10
Vds(V)
20
30
Ta=+25°C
f=1MHz
Crss(pF)
10
8
6
4
2
0
Vds VS. Crss CHARACTERISTICS
Ta=+25°C
f=1MHz
0
10
Vds(V)
20
30
RD16HHF1
6 Jul 2010
3/9
Silicon RF Power Semiconductors
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD16HHF1
Pin-Po CHARACTERISTICS
RoHS Compliance,
Silicon MOSFET Power Transistor 30MHz,16W
TYPICAL CHARACTERISTICS
Pin-Po CHARACTERISTICS
50
Po(dBm) , Gp(dB),Idd(A)
40
30
20
10
Ｉ½½
Ta=+25°C
f=30MHz
Vdd=12.5V
Idq=0.5A
Gp
100
Po
25
20
Pout(W) Idd(A)
ηd(%)
15
10
5
0
0.0
0.2
0.4
Pin(W)
0.6
0.8
Po
100
80
ηd(%)
6 Jul 2010
80
η½
60
40
20
0
-10
0
10
Pin(dBm)
20
30
ηd
Ta=+25°C
f=30MHz
Vdd=12.5V
Idq=0.5A
Idd
60
40
20
0
0
Vdd-Po CHARACTERISTICS
30
25
20
Po(W)
15
10
5
0
4
6
8
10
Vdd(V)
12
14
Ta=25°C
f=30MHz
Pin=0.4W
Idq=0.5A
Zg=ZI=50 ohm
Vgs-Ids CHARACTERISTICS 2
6
5
8
Vds=10V
Tc=-25~+75°C
+25°C
-25°C
Po
6
Idd(A)
Ids(A)
4
Idd
3
2
1
0
4
+75°C
2
0
2
4
6
Vgs(V)
8
10
RD16HHF1
4/9
Silicon RF Power Semiconductors
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD16HHF1
RoHS Compliance,
Silicon MOSFET Power Transistor 30MHz,16W
TEST CIRCUIT(f=30MHz)
V gg
V dd
C1
L2
8.2K ohm
C1
330uF,50V
220pF 68pF 100pF
1K ohm
C2
RF-IN
1 ohm
220pF
20pF
100pF
82pF
L3
C1
L1
RD 16HHF1
10uF,50V *3pcs
C1
88pF
C2
RF-OUT
L4
100pF
200pF
200pF
L5
5
15
65
75
85
90
100
1.5
15
34
41
43
45
67
91
100
C 1:100pF,0.022uF,0.1uF in parallel
C 2:470pF*2 in parallel
L1:10Turns,I.D 8mm,D 0.9mm copper wire
L2:10Turns,I.D 6mm,D 1.6mm silver plateted copper wire
L3:9Turns,I.D 5.6mm,D 0.9mm copper wire
L4:4Turns,I.D 5.6mm,D 0.9mm,P =0.5mm copper wire
L5:5Turns,I.D 5.6mm,D 0.9mm,P =1mm copper wire
/
D imensions:mm
Note:B oard material-teflon substrate
micro strip line width=4.2mm/50 ohm,er:2.7,t=1.6mm
RD16HHF1
6 Jul 2010
5/9
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