MJL21195, MJL21196
Silicon Power Transistors
The MJL21195 and MJL21196 utilize Perforated Emitter
technology and are specifically designed for high power audio output,
disk head positioners and linear applications.
Features
•
•
•
•
•
•
Total Harmonic Distortion Characterized
High DC Current Gain
−
h
FE
= 25 Min @ I
C
= 8 Adc
Excellent Gain Linearity
High SOA: 2.50 A, 80 V, 1 Second
Epoxy Meets UL 94, V−0 @ 0.125 in
ESD Ratings: Human Body Model, 3B
u
8000 V
Machine Model, C
u
400 V
•
These are Pb−Free Devices*
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector−Emitter Voltage
−
1.5 V
Collector Current
−
Continuous
Collector Current
−
Peak (Note 1)
Base Current
−
Continuous
Total Power Dissipation @ T
C
= 25°C
Derate Above 25°C
Operating and Storage Junction
Temperature Range
Symbol
V
CEO
V
CBO
V
EBO
V
CEX
I
C
I
B
P
D
T
J
, T
stg
Value
250
400
5
400
16
30
5
200
1.43
−
65 to
+150
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Adc
W
W/°C
°C
http://onsemi.com
16 A COMPLEMENTARY
SILICON POWER
TRANSISTORS
250 V, 200 W
MARKING DIAGRAM
MJL2119x
AYYWWG
TO−264
CASE 340G
STYLE 2
3
1
EMITTER
BASE
2 COLLECTOR
= 5 or 6
= Assembly Location
= Year
= Work Week
= Pb−Free Package
x
A
YY
WW
G
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
Symbol
R
qJC
Max
0.7
Unit
°C/W
ORDERING INFORMATION
Device
MJL21195G
MJL21196G
Package
TO−264
(Pb−Free)
TO−264
(Pb−Free)
Shipping
†
25 Units / Rail
25 Units / Rail
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5.0
ms,
Duty Cycle
≤
10%.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2010
June, 2010
−
Rev. 4
1
Publication Order Number:
MJL21195/D
MJL21195, MJL21196
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
(Note 2)
Collector−Emitter Sustaining Voltage
(I
C
= 100 mAdc, I
B
= 0)
Collector Cutoff Current
(V
CE
= 200 Vdc, I
B
= 0)
OFF CHARACTERISTICS
(Note 3)
Emitter Cutoff Current
(V
CE
= 5 Vdc, I
C
= 0)
Collector Cutoff Current
(V
CE
= 250 Vdc, V
BE(off)
= 1.5 Vdc)
SECOND BREAKDOWN
(Note 3)
Second Breakdown Collector Current with Base Forward Biased
(V
CE
= 50 Vdc, t = 1 s (Nonrepetitive)
(V
CE
= 80 Vdc, t = 1 s (Nonrepetitive)
ON CHARACTERISTICS
(Note 3)
DC Current Gain
(I
C
= 8 Adc, V
CE
= 5 Vdc)
(I
C
= 16 Adc, I
B
= 5 Adc)
Base−Emitter On Voltage
(I
C
= 8 Adc, V
CE
= 5 Vdc)
Collector−Emitter Saturation Voltage
(I
C
= 8 Adc, I
B
= 0.8 Adc)
(I
C
= 16 Adc, I
B
= 3.2 Adc)
DYNAMIC CHARACTERISTICS
(Note 3)
Total Harmonic Distortion at the Output
V
RMS
= 28.3 V, f = 1 kHz, P
LOAD
= 100 W
RMS
(Matched pair h
FE
= 50 @ 5 A/5 V)
Current Gain Bandwidth Product
(I
C
= 1 Adc, V
CE
= 10 Vdc, f
test
= 1 MHz)
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f
test
= 1 MHz)
2. Pulse Test: Pulse Width = 5.0
ms,
Duty Cycle
≤
10%.
3. Pulse Test: Pulse Width = 300
ms,
Duty Cycle
≤2%.
h
FE
unmatched
h
FE
matched
T
HD
−
−
f
T
C
ob
4
−
0.8
0.08
−
−
−
−
−
500
MHz
pF
%
h
FE
25
8.0
−
−
−
−
100
−
2.2
Vdc
Vdc
I
S/b
4.0
2.25
−
−
−
−
Adc
I
EBO
I
CEX
−
−
−
−
100
100
mAdc
mAdc
V
CEO(sus)
I
CEO
250
−
−
−
−
100
Vdc
mAdc
Symbol
Min
Typical
Max
Unit
V
BE(on)
V
CE(sat)
−
−
−
−
1.4
4
F T, CURRENT BANDWIDTH PRODUCT (MHz)
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
0.1
1.0
I
C
, COLLECTOR CURRENT (A)
10
T
J
= 25°C
f
test
= 1 MHz
V
CE
= 5 V
V
CE
= 10 V
F T, CURRENT BANDWIDTH PRODUCT (MHz)
6.5
PNP MJL21195
7.5
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.1
NPN MJL21196
V
CE
= 10 V
V
CE
= 5 V
T
J
= 25°C
f
test
= 1 MHz
1.0
I
C
, COLLECTOR CURRENT (A)
10
Figure 1. Typical Current Gain
Bandwidth Product
Figure 2. Typical Current Gain
Bandwidth Product
http://onsemi.com
2
MJL21195, MJL21196
TYPICAL CHARACTERISTICS
PNP MJL21195
1000
1000
NPN MJL21196
h FE , DC CURRENT GAIN
T
J
= 100°C
100
25°C
- 25°C
V
CE
= 20 V
10
0.1
1.0
10
I
C
, COLLECTOR CURRENT (A)
100
h FE , DC CURRENT GAIN
100
T
J
= 100°C
25°C
- 25°C
V
CE
= 20 V
10
0.1
1.0
10
I
C
, COLLECTOR CURRENT (A)
100
Figure 3. DC Current Gain, V
CE
= 20 V
Figure 4. DC Current Gain, V
CE
= 20 V
PNP MJL21195
1000
1000
NPN MJL21196
h FE , DC CURRENT GAIN
100
T
J
= 100°C
25°C
- 25°C
V
CE
= 5 V
h FE , DC CURRENT GAIN
100
T
J
= 100°C
25°C
- 25°C
V
CE
= 5 V
10
0.1
1.0
10
I
C
, COLLECTOR CURRENT (A)
100
10
0.1
1.0
10
I
C
, COLLECTOR CURRENT (A)
100
Figure 5. DC Current Gain, V
CE
= 5 V
PNP MJL21195
30
2.0 A
IC , COLLECTOR CURRENT (A)
1.5 A
1.0 A
I
B
= 0.5 A
IC , COLLECTOR CURRENT (A)
25
20
15
10
5.0
T
J
= 25°C
0
0
5.0
10
15
20
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
25
0
0
30
25
20
Figure 6. DC Current Gain, V
CE
= 5 V
NPN MJL21196
2.0 A
1.5 A
1.0 A
I
B
= 0.5 A
15
10
5.0
T
J
= 25°C
5.0
10
15
20
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
25
Figure 7. Typical Output Characteristics
http://onsemi.com
3
Figure 8. Typical Output Characteristics
MJL21195, MJL21196
TYPICAL CHARACTERISTICS
PNP MJL21195
3.0
1.4
SATURATION VOLTAGE (VOLTS)
2.5
2.0
1.5
1.0
0.5
V
CE(sat)
0
0.1
1.0
10
I
C
, COLLECTOR CURRENT (A)
100
0
0.1
1.0
10
I
C
, COLLECTOR CURRENT (A)
100
V
BE(sat)
SATURATION VOLTAGE (VOLTS)
T
J
= 25°C
I
C
/I
B
= 10
1.2
1.0
0.8
0.6
0.4
V
CE(sat)
0.2
T
J
= 25°C
I
C
/I
B
= 10
V
BE(sat)
NPN MJL21196
Figure 9. Typical Saturation Voltages
Figure 10. Typical Saturation Voltages
PNP MJL21195
VBE(on) , BASE-EMITTER VOLTAGE (VOLTS)
VBE(on) , BASE-EMITTER VOLTAGE (VOLTS)
10
T
J
= 25°C
10
T
J
= 25°C
NPN MJL21196
1.0
1.0
V
CE
= 20 V
V
CE
= 5 V
0.1
0.1
1.0
10
100
I
C
, COLLECTOR CURRENT (A)
V
CE
= 20 V
V
CE
= 5 V
0.1
0.1
1.0
10
100
I
C
, COLLECTOR CURRENT (A)
Figure 11. Typical Base−Emitter Voltage
Figure 12. Typical Base−Emitter Voltage
100
10 ms
10
1 Sec
50 ms
1.0
250 ms
0.1
1.0
10
100
1000
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
There are two limitations on the power handling ability of
a transistor; average junction temperature and secondary
breakdown. Safe operating area curves indicate I
C
−
V
CE
lim-
its of the transistor that must be observed for reliable opera-
tion; i.e., the transistor must not be subjected to greater dissip-
ation than the curves indicate.
The data of Figure 13 is based on T
J(pk)
= 150°C; T
C
is vari-
able depending on conditions. At high case temperatures,
thermal limitations will reduce the power than can be handled
to values less than the limitations imposed by second break-
down.
IC , COLLECTOR CURRENT (AMPS)
Figure 13. Active Region Safe Operating Area
http://onsemi.com
4
MJL21195, MJL21196
10000
C
ib
C, CAPACITANCE (pF)
C, CAPACITANCE (pF)
10000
C
ib
1000
C
ob
T
J
= 25°C
f
test
= 1 MHz
100
0.1
1.0
10
100
V
R
, REVERSE VOLTAGE (V)
1000
T
J
= 25°C
f
test
= 1 MHz
100
0.1
1.0
C
ob
10
100
V
R
, REVERSE VOLTAGE (V)
Figure 14. MJL21195 Typical Capacitance
Figure 15. MJL21196 Typical Capacitance
1.2
1.1
T , TOTAL HARMONIC
HD
DISTORTION (%)
1.0
0.9
0.8
0.7
0.6
10
100
1000
FREQUENCY (Hz)
10000
100000
Figure 16. Typical Total Harmonic Distortion
+50 V
AUDIO PRECISION
MODEL ONE PLUS
TOTAL HARMONIC
DISTORTION
ANALYZER
SOURCE
AMPLIFIER
50
W
DUT
0.5
W
0.5
W
8.0
W
DUT
-50 V
Figure 17. Total Harmonic Distortion Test Circuit
http://onsemi.com
5
ARM技术
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
