MJF6388 (NPN),
MJF6668 (PNP)
Preferred Device
Complementary Power
Darlingtons
For Isolated Package Applications
Designed for general−purpose amplifiers and switching
applications, where the mounting surface of the device is required to
be electrically isolated from the heatsink or chassis.
Features
http://onsemi.com
•
Isolated Overmold Package, TO−220 Type
•
Electrically Similar to the Popular 2N6388, 2N6668, TIP102, and
•
•
•
•
•
•
•
•
TIP107
100 V
CEO(sus)
10 A Rated Collector Current
No Isolating Washers Required
Reduced System Cost
High DC Current Gain
−
1000 (Min) @ I
C
= 5.0 Adc
High Isolation Voltage (up to 4500 VRMS)
Case 221D is UL Recognized at 3500 VRMS: File #E69369
Pb−Free Packages are Available*
Rating
Symbol
V
CEO
V
CB
V
EB
Value
100
100
5.0
COMPLEMENTARY SILICON
POWER DARLINGTONS
10 AMPERES
100 VOLTS, 40 WATTS
NPN
COLLECTOR 2
PNP
COLLECTOR 2
BASE
1
BASE
1
EMITTER 3
MJF6388
EMITTER 3
MJF6668
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ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MAXIMUM RATINGS
Unit
Vdc
Vdc
Vdc
V
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
RMS Isolation Voltage (Note 1)
(t = 0.3 sec, R.H.
≤
30%, T
A
= 25_C)
Per Figure 14
Collector Current
−
Continuous
−
Peak (Note 2)
V
ISOL
I
C
I
B
4500
10
15
Adc
Adc
Base Current
−
Continuous
1.0
Total Power Dissipation (Note 3) @ T
C
= 25_C
Derate above 25_C
Total Power Dissipation @ T
A
= 25_C
Derate above 25_C
P
D
P
D
40
0.31
W
W/_C
W
W/_C
_C
2.0
0.016
Operating and Storage Temperature Range
Characteristic
T
J
, T
stg
–65 to +150
Max
4.0
MARKING
DIAGRAM
TO−220 FULLPACK
CASE 221D
STYLE 2
UL RECOGNIZED
= Specific Device Code
x = 3 or 6
y = 6 or 8
= Pb−Free Package
= Assembly Location
= Year
= Work Week
MJF6xy8G
AYWW
1
2
3
MJF6xy8
G
A
Y
WW
THERMAL CHARACTERISTICS
ORDERING INFORMATION
Device
MJF6388
MJF6388G
MJF6668
MJF6668G
Package
TO−220 FULLPACK
TO−220 FULLPACK
(Pb−Free)
TO−220 FULLPACK
TO−220 FULLPACK
(Pb−Free)
Shipping
50 Units/Rail
50 Units/Rail
50 Units/Rail
50 Units/Rail
Symbol
R
qJC
R
qJA
Unit
Thermal Resistance, Junction−to−Case (Note 3)
Thermal Resistance, Junction−to−Ambient
_C/W
_C/W
62.5
Lead Temperature for Soldering Purposes
T
L
260
_C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Proper strike and creepage distance must be provided.
2. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle
v
10%.
3. Measurement made with thermocouple contacting the bottom insulated
surface (in a location beneath the die), the devices mounted on a heatsink with
thermal grease and a mounting torque of
≥
6 in. lbs.
*For additional information on our Pb−Free strategy
and soldering details, please download the
ON Semiconductor Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.
Publication Order Number:
MJF6388/D
©
Semiconductor Components Industries, LLC, 2008
September, 2008
−
Rev. 10
1
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4. Pulse Test: Pulse Width
v
300
ms,
Duty Cycle
v
2.0%.
DYNAMIC CHARACTERISTICS
ON CHARACTERISTICS
(Note 4)
OFF CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
(T
C
= 25_C unless otherwise noted)
Collector−Emitter Saturation Voltage (I
C
= 3.0 Adc, I
B
= 6.0 mAdc)
Collector−Emitter Saturation Voltage
(I
C
= 5.0 Adc, I
B
= 0.01 Adc)
Collector−Emitter Saturation Voltage
(I
C
= 8.0 Adc, I
B
= 80 mAdc)
Collector−Emitter Saturation Voltage
(I
C
= 10 Adc, I
B
= 0.1 Adc)
Base−Emitter Saturation Voltage (I
C
= 5.0 Adc, I
B
= 0.01 Adc)
Base−Emitter Saturation Voltage
(I
C
= 10 Adc, I
B
= 0.1 Adc)
DC Current Gain (I
C
= 3.0 Adc, V
CE
= 4.0 Vdc)
DC Current Gain
(I
C
= 5.0 Adc, V
CE
= 3.0 Vdc)
DC Current Gain
(I
C
= 8.0 Adc, V
CE
= 4.0 Vdc)
DC Current Gain
(I
C
= 10 Adc, V
CE
= 3.0 Vdc)
Collector Cutoff Current (V
CE
= 100 Vdc, V
EB(off)
= 1.5 Vdc)
Collector Cutoff Current
(V
CE
= 100 Vdc, V
EB(off)
= 1.5 Vdc, T
C
= 125_C)
Small−Signal Current Gain
(I
C
= 1.0 Adc, V
CE
= 5.0 Vdc, f = 1.0 kHz)
Insulation Capacitance
(Collector−to−External Heatsink)
Output Capacitance (V
CB
= 10 Vdc, I
E
= 0, f = 1.0 MHz)
Small−Signal Current Gain
(I
C
= 1.0 Adc, V
CE
= 5.0 Vdc, f
test
= 1.0 MHz)
Base−Emitter On Voltage
(I
C
= 8.0 Adc, V
CE
= 4.0 Vdc)
Emitter Cutoff Current
(V
BE
= 5.0 Vdc, I
C
= 0)
Collector Cutoff Current
(V
CB
= 100 Vdc, I
E
= 0)
Collector Cutoff Current
(V
CE
= 80 Vdc, I
B
= 0)
Collector−Emitter Sustaining Voltage (Note 4)
(I
C
= 30 mAdc, I
B
= 0)
BASE
NPN
MJF6388
≈
8k
Characteristic
≈
120
COLLECTOR
EMITTER
MJF6388 (NPN), MJF6668 (PNP)
Figure 1. Darlington Schematic
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MJF6388
MJF6668
BASE
V
CEO(sus)
2
PNP
MJF6668
Symbol
V
CE(sat)
V
BE(sat)
V
BE(on)
C
c−hs
I
CBO
I
CEO
I
EBO
I
CEX
|h
fe
|
C
ob
h
FE
h
fe
≈
8k
≈
120
1000
3000
1000
200
100
COLLECTOR
Min
100
20
−
−
−
−
−
−
−
−
−
−
−
−
−
−
EMITTER
3.0 Typ
15000
−
−
−
Max
200
300
2.5
2.8
4.5
2.0
2.0
2.5
3.0
2.0
10
3.0
10
10
−
−
−
mAdc
mAdc
mAdc
mAdc
mAdc
Unit
Vdc
Vdc
Vdc
Vdc
pF
pF
−
−
−
MJF6388 (NPN), MJF6668 (PNP)
R
B
& R
C
VARIED TO OBTAIN DESIRED CURRENT LEVELS
D
1
, MUST BE FAST RECOVERY TYPES, e.g.,
MUR110 USED ABOVE I
B
≈
100 mA
MSD6100 USED BELOW I
B
≈
100 mA
V
1
APPROX.
+12 V
51
V
2
APPROX.
-8 V
t
r
, t
f
≤
10 ns
DUTY CYCLE = 1%
R
B
≈
8k
≈
120
V
CC
+ 30 V
R
C
TUT
SCOPE
D
1
25
ms
-4 V
FOR t
d
AND t
r
, D
1
IS DISCONNECTED
AND V
2
= 0
FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES.
Figure 2. Switching Times Test Circuit
NPN
MJF6388
7
5
3
t
s
t, TIME (
μ
s)
t
f
1
0.7
0.3
0.2
0.1
0.07
0.1
t
r
V
CC
= 30 V
I
C
/I
B
= 250
I
B1
= I
B2
T
J
= 25°C
0.2
10
7
5
3
2
1
0.7
0.5
0.3
0.2
PNP
MJF6668
V
CC
= 30 V
I
C
/I
B
= 250
I
B1
= I
B2
T
J
= 25°C
t
s
t
r
t, TIME (
μ
s)
t
d
t
d
t
f
1
0.5
2
I
C
, COLLECTOR CURRENT (AMPS)
5
10
0.1
0.1
0.2
3
0.5 0.7 1
2
0.3
I
C
, COLLECTOR CURRENT (AMPS)
5
7
10
Figure 3. Typical Switching Times
20
IC, COLLECTOR CURRENT (AMPS)
10
5
3
2
1
0.5
0.3
0.2
0.1
0.05
0.03
0.02
100
ms
1 ms
T
J
= 150°C
dc
5 ms
CURRENT LIMIT
SECONDARY BREAKDOWN LIMIT
THERMAL LIMIT @ T
C
= 25°C
(SINGLE PULSE)
1
5
20 30
2
3
10
50
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
100
Figure 4. Maximum Forward Bias
Safe Operating Area
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3
MJF6388 (NPN), MJF6668 (PNP)
1
r(t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
0.5
0.3
0.2
0.1
0.1
0.05
0.03
0.02
0.01
0.01 0.02
0.05
0.1
0.2 0.3 0.5
1
2 3
5
10
20 30 50
t, TIME (ms)
100 200 300 500
1K
2K 3K 5K
10K 20K 30K 50K 100K
0.05
SINGLE PULSE
D = 0.5
0.2
R
qJC
(t) = r(t) R
qJC
R
qJC
=
°C/W
MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
- T
C
= P
(pk)
R
qJC(t)
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
Figure 5. Thermal Response
1
SECOND BREAKDOWN
DERATING
POWER DERATING FACTOR
0.8
0.6
THERMAL
DERATING
0.4
0.2
0
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
−
V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 4 is based on T
J(pk)
= l50_C; T
C
is
variable depending on conditions. Secondary breakdown
pulse limits are valid for duty cycles to 10% provided T
J(pk)
< 150_C. T
J(pk)
may be calculated from the data in Figure 5.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by secondary breakdown.
160
20
40
60
80
100
120
140
T
C
, CASE TEMPERATURE (°C)
Figure 6. Maximum Power Derating
NPN
MJF6388
10,000
hfe , SMALL-SIGNAL CURRENT GAIN
5000
3000
2000
1000
500
300
200
100
50
30
20
10
1
2
5
10
20
50 100
f, FREQUENCY (kHz)
200
500 1000
T
C
= 25°C
V
CE
= 4 Vdc
I
C
= 3 Adc
10,000
hFE , SMALL-SIGNAL CURRENT GAIN
5000
2000
1000
500
200
100
50
20
10
1
2 3
5 7 10
20 30 50 70 100
f, FREQUENCY (kHz)
200 300 500 1000
T
C
= 25°C
V
CE
= 4 VOLTS
I
C
= 3 AMPS
PNP
MJF6668
Figure 7. Typical Small−Signal Current Gain
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4
MJF6388 (NPN), MJF6668 (PNP)
NPN
MJF6388
300
T
J
= 25°C
200
C, CAPACITANCE (pF)
C, CAPACITANCE (pF)
200
300
T
J
= 25°C
PNP
MJF6668
100
70
C
ib
50
C
ob
100
70
50
C
ib
C
ob
30
0.1
0.2
0.5
1
2
5
10
20
V
R
, REVERSE VOLTAGE (VOLTS)
50
100
30
0.1
0.2
0.5
1
2
5
10
20
V
R
, REVERSE VOLTAGE (VOLTS)
50
100
Figure 8. Typical Capacitance
20,000
V
CE
= 4 V
10,000
hFE, DC CURRENT GAIN
5000
3000
2000
1000
500
300
200
0.1
T
J
= 150°C
20,000
V
CE
= 4 V
10,000
hFE, DC CURRENT GAIN
7000
5000
3000
2000
25°C
1000
700
500
300
200
0.1
T
J
= 150°C
25°C
- 55°C
- 55°C
0.2
0.3
0.5 0.7
1
2
3
5
7
10
0.2
0.3
0.5 0.7
1
2
3
5
7
10
I
C
, COLLECTOR CURRENT (AMP)
I
C
, COLLECTOR CURRENT (AMP)
Figure 9. Typical DC Current Gain
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
3
T
J
= 25°C
2.6
I
C
= 2 A
4A
6A
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
3
T
J
= 25°C
2.6
I
C
= 2 A
4A
6A
2.2
2.2
1.8
1.8
1.4
1
0.3
1.4
1
0.3
0.5 0.7
1
2
3
5
7
10
20
30
I
B
, BASE CURRENT (mA)
0.5 0.7
1
2
3
5
7
10
20
30
I
B
, BASE CURRENT (mA)
Figure 10. Typical Collector Saturation Region
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