There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
−
V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on T
J(pk)
= 150_C; T
C
is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
J(pk)
v
150_C. T
J(pk)
may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
Figure 5. Active Region Safe Operating Area
3.0
2.0
t
s
′
1.0
t, TIME (
μ
s)
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.03
t
f
@ V
CC
= 10 V
t
f
@ V
CC
= 30 V
300
I
B1
= I
B2
I
C
/I
B
= 10
t
s
′
= t
s
- 1/8 t
f
T
J
= 25°C
T
J
= + 25°C
200
CAPACITANCE (pF)
100
C
eb
70
50
C
cb
0.05 0.07 0.1
0.2 0.3
0.5 0.7 1.0
I
C
, COLLECTOR CURRENT (AMP)
2.0
3.0
30
0.1
0.2 0.3
0.5
1.0
2.0 3.0 5.0
10
V
R
, REVERSE VOLTAGE (VOLTS)
20 30 40
Figure 6. Turn−Off Time
Figure 7. Capacitance
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3
MJF31C (NPN), MJF32C (PNP)
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
500
300
hFE, DC CURRENT GAIN
T
J
= 150°C
25°C
- 55°C
V
CE
= 2.0 V
2.0
T
J
= 25°C
1.6
I
C
= 0.3 A
1.0 A
3.0 A
100
70
50
30
1.2
0.8
10
7.0
5.0
0.3
0.5 0.7 1.0
0.03 0.05 0.07 0.1
I
C
, COLLECTOR CURRENT (AMP)
0.4
3.0
0
1.0
2.0
5.0
10
20
50
100
I
B
, BASE CURRENT (mA)
200
500 1000
Figure 8. DC Current Gain
1.4
1.2
V, VOLTAGE (VOLTS)
1.0
0.8
0.6
0.4
0.2
V
CE(sat)
@ I
C
/I
B
= 10
0.1
0.2 0.3 0.5
1.0
2.0 3.0
V
BE(sat)
@ I
C
/I
B
= 10
V
BE
@ V
CE
= 2.0 V
T
J
= 25°C
θ
V, TEMPERATURE COEFFICIENTS (mV/
°
C)
+ 2.5
+ 2.0
+ 1.5
+ 1.0
+ 0.5
0
- 0.5
- 1.0
- 1.5
- 2.0
Figure 9. Collector Saturation Region
*APPLIES FOR I
C
/I
B
≤
h
FE
/2
T
J
= - 65°C TO + 150°C
*q
VC
FOR V
CE(sat)
q
VB
FOR V
BE
0
0.003 0.005 0.01 0.02 0.03 0.05
- 2.5
0.003 0.005 0.01 0.02
0.05
0.1
0.2 0.3 0.5
1.0
2.0 3.0
I
C
, COLLECTOR CURRENT (AMPS)
I
C
, COLLECTOR CURRENT (AMP)
Figure 10. “On” Voltages
10
3
IC, COLLECTOR CURRENT (
μ
A)
10
2
10
1
10
0
10
-1
10
-2
V
CE
= 30 V
T
J
= 150°C
R BE , EXTERNAL BASE-EMITTER RESISTANCE (OHM
10
7
Figure 11. Temperature Coefficients
10
6
10
5
10
4
10
3
10
2
20
I
C
≈
I
CES
I
C
= 10 x I
CES
V
CE
= 30 V
100°C
REVERSE
25°C
I
CES
0
+ 0.1 + 0.2 + 0.3 + 0.4 + 0.5 + 0.6
FORWARD
I
C
= 2 x I
CES
(TYPICAL I
CES
VALUES
OBTAINED FROM FIGURE 12)
40
60
80
100
120
140
160
10
-3
- 0.4 - 0.3 - 0.2 - 0.1
V
BE
, BASE-EMITTER VOLTAGE (VOLTS)
T
J
, JUNCTION TEMPERATURE (°C)
Figure 12. Collector Cut−Off Region
Figure 13. Effects of Base−Emitter Resistance
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4
MJF31C (NPN), MJF32C (PNP)
PACKAGE DIMENSIONS
TO−220 FULLPAK
CASE 221D−03
ISSUE J
−T−
F
Q
A
1 2 3
SEATING
PLANE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH
3. 221D-01 THRU 221D-02 OBSOLETE, NEW
STANDARD 221D-03.
INCHES
MIN
MAX
0.617
0.635
0.392
0.419
0.177
0.193
0.024
0.039
0.116
0.129
0.100 BSC
0.118
0.135
0.018
0.025
0.503
0.541
0.048
0.058
0.200 BSC
0.122
0.138
0.099
0.117
0.092
0.113
0.239
0.271
MILLIMETERS
MIN
MAX
15.67
16.12
9.96
10.63
4.50
4.90
0.60
1.00
2.95
3.28
2.54 BSC
3.00
3.43
0.45
0.63
12.78
13.73
1.23
1.47
5.08 BSC
3.10
3.50
2.51
2.96
2.34
2.87
6.06
6.88
−B−
C
S
U
H
K
−Y−
G
N
L
D
3 PL
M
J
R
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
U
0.25 (0.010)
B
M
Y
STYLE 2:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
ON Semiconductor
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