MJD31, MJD31C (NPN),
MJD32, MJD32C (PNP)
Complementary Power
Transistors
DPAK For Surface Mount Applications
Designed for general purpose amplifier and low speed switching
applications.
Features
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•
•
•
•
•
•
Lead Formed for Surface Mount Applications in Plastic Sleeves
Straight Lead Version in Plastic Sleeves (“1” Suffix)
Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix)
Electrically Similar to Popular TIP31 and TIP32 Series
Epoxy Meets UL 94, V−0 @ 0.125 in
ESD Ratings: Human Body Model, 3B
u
8000 V
Machine Model, C
u
400 V
•
These are Pb−Free Packages
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
MJD31, MJD32
MJD31C, MJD32C
Collector−Base Voltage
MJD31, MJD32
MJD31C, MJD32C
Emitter−Base Voltage
Collector Current
−
Continuous
−
Peak
Base Current
Total Power Dissipation @ T
C
= 25°C
Derate above 25°C
Total Power Dissipation @ T
A
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
V
EB
I
C
I
B
P
D
P
D
T
J
, T
stg
V
CB
Symbol
V
CEO
Max
40
100
40
100
5
3
5
1
15
0.12
1.56
0.012
−65
to
+ 150
Unit
Vdc
1 2
SILICON
POWER TRANSISTORS
3 AMPERES
40 AND 100 VOLTS
15 WATTS
MARKING
DIAGRAMS
4
3
4
DPAK
CASE 369C
STYLE 1
AYWW
J3xxG
Vdc
1
Vdc
Adc
Adc
W
W/°C
W
W/°C
°C
2
DPAK−3
CASE 369D
STYLE 1
3
A
Y
WW
xx
G
YWW
J3xxG
= Site Code
= Year
= Work Week
= 1, 1C, 2, or 2C
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 8 of this data sheet.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient*
Lead Temperature for Soldering Purposes
Symbol
R
qJC
R
qJA
T
L
Max
8.3
80
260
Unit
°C/W
°C/W
°C
*These ratings are applicable when surface mounted on the minimum pad sizes
recommended.
©
Semiconductor Components Industries, LLC, 2011
February, 2011
−
Rev. 8
1
Publication Order Number:
MJD31/D
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1. Pulse Test: Pulse Width
v
300
ms,
Duty Cycle
v
2%.
2. f
T
=
⎪h
fe
⎪•
f
test
.
DYNAMIC CHARACTERISTICS
ON CHARACTERISTICS
(Note 1)
OFF CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
(T
C
= 25_C unless otherwise noted)
Emitter Cutoff Current
(V
BE
= 5 Vdc, I
C
= 0)
Collector Cutoff Current
(V
CE
= Rated V
CEO
, V
EB
= 0)
Collector Cutoff Current
(V
CE
= 40 Vdc, I
B
= 0)
(V
CE
= 60 Vdc, I
B
= 0)
Collector−Emitter Sustaining Voltage (Note 1)
(I
C
= 30 mAdc, I
B
= 0)
Small−Signal Current Gain
(I
C
= 0.5 Adc, V
CE
= 10 Vdc, f = 1 kHz)
Current Gain
−
Bandwidth Product (Note 2)
(I
C
= 500 mAdc, V
CE
= 10 Vdc, f
test
= 1 MHz)
Base−Emitter On Voltage
(I
C
= 3 Adc, V
CE
= 4 Vdc)
Collector−Emitter Saturation Voltage
(I
C
= 3 Adc, I
B
= 375 mAdc)
DC Current Gain
(I
C
= 1 Adc, V
CE
= 4 Vdc)
(I
C
= 3 Adc, V
CE
= 4 Vdc)
MJD31, MJD31C (NPN), MJD32, MJD32C (PNP)
Characteristic
MJD31, MJD32
MJD31C, MJD32C
MJD31, MJD32
MJD31C, MJD32C
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V
CEO(sus)
Symbol
V
CE(sat)
V
BE(on)
ICES
I
CEO
I
EBO
h
FE
h
fe
f
T
Min
40
100
20
25
10
3
−
−
−
−
−
Max
1.8
1.2
20
50
−
50
−
−
1
−
−
mAdc
mAdc
mAdc
MHz
Unit
Vdc
Vdc
Vdc
−
−
2
MJD31, MJD31C (NPN), MJD32, MJD32C (PNP)
TYPICAL CHARACTERISTICS
T
A
T
C
2.5 25
PD, POWER DISSIPATION (WATTS)
25
ms
+11 V
0
1.5 15
T
A
(SURFACE MOUNT)
T
C
-9 V
t
r
, t
f
≤
10 ns
DUTY CYCLE = 1%
51
-4 V
D
1
R
B
V
CC
+ 30 V
R
C
SCOPE
2 20
1 10
0.5
5
0
0
25
50
75
100
T, TEMPERATURE (°C)
125
150
R
B
and R
C
VARIED TO OBTAIN DESIRED CURRENT LEVELS
D
1
MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE I
B
≈
100 mA
MSD6100 USED BELOW I
B
≈
100 mA
REVERSE ALL POLARITIES FOR PNP.
Figure 1. Power Derating
Figure 2. Switching Time Test Circuit
2
1
0.7
0.5
t, TIME (
μ
s)
0.3
t
r
@ V
CC
= 30 V
I
C
/I
B
= 10
T
J
= 25°C
3
2
t
s
′
1
t, TIME (
μ
s)
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.03
0.05 0.07 0.1
0.2
0.3
0.5 0.7
t
f
@ V
CC
= 10 V
t
f
@ V
CC
= 30 V
I
B1
= I
B2
I
C
/I
B
= 10
t
s
′
= t
s
- 1/8 t
f
T
J
= 25°C
t
r
@ V
CC
= 10 V
0.1
0.07
0.05
0.03
0.02
0.03
t
d
@ V
BE(off)
= 2 V
0.05 0.07 0.1
0.3
0.5 0.7
1
1
2
3
I
C
, COLLECTOR CURRENT (AMPS)
I
C
, COLLECTOR CURRENT (AMPS)
Figure 3. Turn−On Time
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
1
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
0.01
Figure 4. Turn−Off Time
D = 0.5
0.2
0.1
0.05
0.01
SINGLE PULSE
R
qJC(t)
= r(t) R
qJC
R
qJC
= 8.33°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
- T
C
= P
(pk)
q
JC(t)
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
0.02 0.03
0.05
0.1
0.2 0.3
0.5
1
2 3
5
t, TIME (ms)
10
20
30
50
100
200 300
500
1k
Figure 5. Thermal Response
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3
MJD31, MJD31C (NPN), MJD32, MJD32C (PNP)
TYPICAL CHARACTERISTICS
−
MJD31, MJD31C (NPN)
1000
150°C
h
FE
, DC CURRENT GAIN
V
CE
= 4 V
1000
150°C
h
FE
, DC CURRENT GAIN
V
CE
= 2 V
100
25°C
−55°C
100
25°C
−55°C
10
10
1
0.01
0.1
1
10
1
0.01
0.1
1
10
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
Figure 6. DC Current Gain at V
CE
= 4 V
0.6
V
CE(sat)
, COLL−EMITT SATURATION
VOLTAGE (V)
0.5
0.4
0.3
0.2
0.1
0
0.001
25°C
−55°C
0.01
0.1
1
150°C
V
BE(sat)
, BASE−EMITT SATURATION VOLTAGE (V)
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.001
Figure 7. DC Current Gain at V
CE
= 2 V
I
C
/I
B
= 10
I
C
/I
B
= 10
−55°C
25°C
150°C
10
I
C
, COLLECTOR CURRENT (A)
0.01
0.1
1
I
C
, COLLECTOR CURRENT (A)
10
Figure 8. Collector−Emitter Saturation Voltage
V
BE(on)
, BASE−EMITTER ON VOLTAGE (V)
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.001
0.01
0.1
1
150°C
−55°C
25°C
2
1.6
1.2
0.8
0.4
Figure 9. Base−Emitter Saturation Voltage
V
CE
= 5 V
T
A
=
25°C
100 mA
500 mA
I
C
= 3 A
1A
10
10 mA
0
0.01
0.1
1
10
100
1000
I
C
, COLLECTOR CURRENT (A)
I
B
, BASE CURRENT (mA)
Figure 10. Base-Emitter “On” Voltage
Figure 11. Collector Saturation Region
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4
MJD31, MJD31C (NPN), MJD32, MJD32C (PNP)
TYPICAL CHARACTERISTICS
−
MJD31, MJD31C (NPN)
1000
100
f
T
, CURRENT−GAIN
−
BANDWIDTH
PRODUCT (MHz)
V
CE
= 5 V
T
A
= 25°C
T
A
= 25°C
C
ib
C, CAPACITANCE (pF)
100
C
ob
10
10
1
0.1
1
10
V
R
, REVERSE VOLTAGE (V)
100
1
0.001
0.01
0.1
1
I
C
, COLLECTOR CURRENT (A)
10
Figure 12. Capacitance
10
I
C
, COLLECTOR CURRENT (A)
Figure 13. Current−Gain−Bandwidth Product
1
0.1
0.01
1
10
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
100
Figure 14. Safe Operating Area
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