HGTP2N120BN, HGTD2N120BNS,
HGT1S2N120BNS
Data Sheet
January 2000
File Number
4696.2
12A, 1200V, NPT Series N-Channel IGBT
The HGTP2N120BN, HGTD2N120BNS, and
HGT1S2N120BNS are
N
on-
P
unch
T
hrough (NPT) IGBT
designs. They are new members of the MOS gated high
voltage switching IGBT family. IGBTs combine the best
features of MOSFETs and bipolar transistors. This device
has the high input impedance of a MOSFET and the low
on-state conduction loss of a bipolar transistor.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly Developmental Type TA49312.
Features
• 12A, 1200V, T
C
= 25
o
C
• 1200V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . .160ns at T
J
= 150
o
C
• Short Circuit Rating
• Low Conduction Loss
• Avalanche Rated
•
Thermal Impedance
SPICE Model
Temperature Compensating
SABER™ Model
www.intersil.com
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Ordering Information
PART NUMBER
HGTP2N120BN
HGTD2N120BNS
HGT1S2N120BNS
PACKAGE
TO-220AB
TO-252AA
TO-263AB
BRAND
2N120BN
2N120BN
2N120BN
Packaging
JEDEC TO-220AB
E
C
COLLECTOR
(FLANGE)
G
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB and TO-252AA variant in Tape and Reel,
e.g., HGT1S2N120BNS9A.
Symbol
C
JEDEC TO-252AA
COLLECTOR
(FLANGE)
G
E
E
G
JEDEC TO-263AB
COLLECTOR
(FLANGE)
G
E
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,598,461
4,682,195
4,803,533
4,888,627
4,417,385
4,605,948
4,684,413
4,809,045
4,890,143
4,430,792
4,620,211
4,694,313
4,809,047
4,901,127
4,443,931
4,631,564
4,717,679
4,810,665
4,904,609
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
4,587,713
4,644,637
4,801,986
4,883,767
©2001 Fairchild Semiconductor Corporation
HGTP2N120BN, HGTD2N120BNS, HGT1S120BNS Rev. A
HGTP2N120BN, HGTD2N120BNS, HGT1S120BNS
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
HGTP2N120BN,
HGTD2N120BNS
HGT1S2N120BNS
1200
12
5.6
20
±
20
±
30
12A at 1200V
104
0.83
18
-55 to 150
300
260
8
15
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV
CES
Collector Current Continuous
At T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C25
At T
C
= 110
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
CM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GEM
Switching Safe Operating Area at T
J
= 150
o
C (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA
Power Dissipation Total at T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Power Dissipation Derating T
C
> 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Forward Voltage Avalanche Energy (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AV
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, see Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
pkg
Short Circuit Withstand Time (Note 3) at V
GE
= 15V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
SC
Short Circuit Withstand Time (Note 3) at V
GE
= 12V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
SC
UNITS
V
A
A
A
V
V
W
W/
o
C
mJ
o
C
o
C
o
C
µ
s
µ
s
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Pulse width limited by maximum junction temperature.
2. I
CE
= 3A, L = 4mH, T
J
= 25
o
C.
3. V
CE(PK)
= 840V, T
J
= 125
o
C, R
G
= 51
Ω
.
Electrical Specifications
PARAMETER
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
CES
BV
ECS
I
CES
TEST CONDITIONS
I
C
= 250
µ
A, V
GE
= 0V
I
C
= 10mA, V
GE
= 0V
V
CE
= BV
CES
T
C
= 25
o
C
T
C
= 125
o
C
T
C
= 150
o
C
T
C
= 25
o
C
T
C
= 150
o
C
MIN
1200
15
-
-
-
-
-
6.0
-
12
-
-
-
-
-
-
-
-
-
-
TYP
-
-
-
40
-
2.45
3.6
6.8
-
-
10.2
24
32
21
11
185
100
83
370
195
MAX
-
-
250
-
0.5
2.7
4.2
-
±
250
-
-
30
39
25
15
240
130
-
500
270
UNITS
V
V
µ
A
µ
A
mA
V
V
V
nA
A
V
nC
nC
ns
ns
ns
ns
µ
J
µ
J
µ
J
Collector to Emitter Breakdown Voltage
Emitter to Collector Breakdown Voltage
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
V
CE(SAT)
V
GE(TH)
I
GES
SSOA
V
GEP
Q
G(ON)
t
d(ON)I
t
rI
t
d(OFF)I
t
fI
E
ON1
E
ON2
E
OFF
I
C
= 2.3A,
V
GE
= 15V
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
Gate to Emitter Plateau Voltage
On-State Gate Charge
I
C
= 20
µ
A, V
CE
= V
GE
V
GE
=
±
20V
T
J
= 150
o
C, R
G
= 51
Ω,
V
GE
= 15V,
L = 400
µ
H, V
CE(PK)
= 1200V
I
C
= 2.3A, V
CE
= 0.5 BV
CES
I
C
= 2.3A,
V
CE
= 0.5 BV
CES
V
GE
= 15V
V
GE
= 20V
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 4)
Turn-On Energy (Note 4)
Turn-Off Energy (Note 5)
IGBT and Diode at T
J
= 25
o
C
I
CE
= 2.3A
V
CE
= 0.8 BV
CES
V
GE
= 15V
R
G
= 51
Ω
L = 5mH
Test Circuit (Figure 18)
©2001 Fairchild Semiconductor Corporation
HGTP2N120BN, HGTD2N120BNS, HGT1S120BNS Rev. A
HGTP2N120BN, HGTD2N120BNS, HGT1S120BNS
Electrical Specifications
PARAMETER
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 4)
Turn-On Energy (Note 4)
Turn-Off Energy (Note 5)
Thermal Resistance Junction To Case
NOTES:
4. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E
ON1
is the turn-on loss of the IGBT only. E
ON2
is the
turn-on loss when a typical diode is used in the test circuit and the diode is at the same T
J
as the IGBT. The diode type is specified in Figure 18.
5. Turn-Off Energy Loss (E
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (I
CE
= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
T
C
= 25
o
C, Unless Otherwise Specified
(Continued)
SYMBOL
t
d(ON)I
t
rI
t
d(OFF)I
t
fI
E
ON1
E
ON2
E
OFF
R
θJC
TEST CONDITIONS
IGBT and Diode at T
J
= 150
o
C
I
CE
= 2.3A
V
CE
= 0.8 BV
CES
V
GE
= 15V
R
G
= 51Ω
L = 5mH
Test Circuit (Figure 18)
MIN
-
-
-
-
-
-
-
-
TYP
25
11
195
160
83
725
280
-
MAX
30
15
260
200
-
1000
380
1.2
UNITS
ns
ns
ns
ns
µJ
µJ
µJ
o
C/W
Typical Performance Curves
12
I
CE
, DC COLLECTOR CURRENT (A)
Unless Otherwise Specified
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
14
12
10
8
6
4
2
0
V
GE
= 15V
10
8
6
4
2
0
T
J
= 150
o
C, R
G
= 51Ω, V
GE
= 15V, L = 1mH
25
50
75
100
125
150
0
200
400
600
800
1000
1200
1400
T
C
, CASE TEMPERATURE (
o
C)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
t
SC
, SHORT CIRCUIT WITHSTAND TIME (µs)
V
CE
= 840V, R
G
= 51Ω, T
J
= 125
o
C
20
35
I
SC
T
C
= 75
o
C, V
GE
= 15V, IDEAL DIODE
100
T
C
75
o
C
75
o
C
V
GE
15V
12V
t
SC
50
f
MAX1
= 0.05 / (t
d(OFF)I
+ t
d(ON)I
)
f
MAX2
= (P
D
- P
C
) / (E
ON2
+ E
OFF
)
P
C
= CONDUCTION DISSIPATION T
C
V
GE
(DUTY FACTOR = 50%)
110
o
C 15V
R
ØJC
= 1.2
o
C/W, SEE NOTES
110
o
C 12V
0.5
1.0
2.0
15
30
10
25
10
5
5.0
12
13
14
15
20
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
V
GE
, GATE TO EMITTER VOLTAGE (V)
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
©2001 Fairchild Semiconductor Corporation
HGTP2N120BN, HGTD2N120BNS, HGT1S120BNS Rev. A
I
SC
, PEAK SHORT CIRCUIT CURRENT (A)
f
MAX
, OPERATING FREQUENCY (kHz)
T
J
= 150
o
C, R
G
= 51Ω, L = 5mH, V
CE
= 960V
25
40
HGTP2N120BN, HGTD2N120BNS, HGT1S120BNS
Typical Performance Curves
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
10
Unless Otherwise Specified
(Continued)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
10
T
C
= -55
o
C
8
T
C
= 25
o
C
6
T
C
= 150
o
C
4
8
T
C
= 25
o
C
6
T
C
= -55
o
C
4
T
C
= 150
o
C
2
DUTY CYCLE < 0.5%, V
GE
= 12V
250
µ
s PULSE TEST
0
0
1
2
3
4
5
6
7
2
DUTY CYCLE < 0.5%, V
GE
= 15V
250
µ
s PULSE TEST
0
0
1
2
3
4
5
6
7
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
R
G
= 51
Ω
, L = 5mH, V
CE
= 960V
1.5
E
OFF
, TURN-OFF ENERGY LOSS (mJ)
2.0
E
ON2
, TURN-ON ENERGY LOSS (mJ)
400
350
300
250
200
150
100
50
0
0
R
G
= 51
Ω
, L = 5mH, V
CE
= 960V
T
J
= 150
o
C, V
GE
= 12V, V
GE
= 15V
T
J
= 150
o
C, V
GE
= 12V OR 15V
1.0
T
J
= 25
o
C, V
GE
= 12V OR 15V
0.5
T
J
= 25
o
C, V
GE
= 12V, V
GE
= 15V
0
0
1
2
3
4
5
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
1
2
3
4
5
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
45
t
dI
, TURN-ON DELAY TIME (ns)
40
35
30
25
20
40
R
G
= 51
Ω
, L = 5mH, V
CE
= 960V
35
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 12V
t
rI
, RISE TIME (ns)
30
25
20
15
10
5
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 15V
0
5
0
1
2
3
4
5
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
T
J
= 25
o
C OR T
J
= 150
o
C, V
GE
= 15V
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 12V
R
G
= 51Ω, L = 5mH, V
CE
= 960V
15
0
1
2
3
4
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
©2001 Fairchild Semiconductor Corporation
HGTP2N120BN, HGTD2N120BNS, HGT1S120BNS Rev. A
HGTP2N120BN, HGTD2N120BNS, HGT1S120BNS
Typical Performance Curves
450
t
d(OFF)I
, TURN-OFF DELAY TIME (ns)
400
t
fI
, FALL TIME (ns)
350
300
250
200
150
100
0
1
2
3
4
5
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
V
GE
= 12V, V
GE
= 15V, T
J
= 150
o
C
Unless Otherwise Specified
(Continued)
R
G
= 51Ω, L = 5mH, V
CE
= 960V
400
350
300
250
R
G
= 51Ω, L = 5mH, V
CE
= 960V
T
J
= 150
o
C, V
GE
= 12V OR 15V
200
150
100
50
V
GE
= 12V, V
GE
= 15V, T
J
= 25
o
C
T
J
= 25
o
C, V
GE
= 12V OR 15V
0
1
2
3
4
5
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
30
25
20
15
10
5
V
GE
, GATE TO EMITTER VOLTAGE (V)
DUTY CYCLE < 0.5%, V
CE
= 20V
250µs PULSE TEST
20
I
G(REF)
= 1mA, R
L
= 260Ω, T
C
= 25
o
C
15
V
CE
= 1200V
10
V
CE
= 400V
5
V
CE
= 800V
T
C
= 25
o
C
T
C
= 150
o
C
7
8
9
10
T
C
= -55
o
C
11
12
13
14
15
0
0
V
GE
, GATE TO EMITTER VOLTAGE (V)
0
5
10
15
20
25
30
35
Q
G
, GATE CHARGE (nC)
FIGURE 13. TRANSFER CHARACTERISTIC
FIGURE 14. GATE CHARGE WAVEFORMS
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
0.8
FREQUENCY = 1MHz
3.0
2.5
2.0
1.5
DUTY CYCLE < 0.5%, T
C
= 110
o
C
250µs PULSE TEST
C, CAPACITANCE (nF)
0.6
C
IES
0.4
V
GE
= 15V
V
GE
= 10V
1.0
0.5
0
0.2
C
OES
C
RES
0
5
10
15
20
25
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
FIGURE 16. COLLECTOR TO EMITTER ON-STATE VOLTAGE
©2001 Fairchild Semiconductor Corporation
HGTP2N120BN, HGTD2N120BNS, HGT1S120BNS Rev. A
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