HGTP2N120BND, HGT1S2N120BNDS
Data Sheet
December 2001
12A, 1200V, NPT Series N-Channel IGBT
with Anti-Parallel Hyperfast Diode
The HGTP2N120BND and HGT1S2N120BNDS are
N
on-
P
unch
T
hrough (NPT) IGBT designs. They are new
members of the MOS gated high voltage switching IGBT
family. IGBTs combine the best features of MOSFETs and
bipolar transistors. This device has the high input impedance
of a MOSFET and the low on-state conduction loss of a
bipolar transistor. The IGBT used is the development type
TA49312. The Diode used is the development type
TA49056.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly Developmental Type TA49310.
Features
• 12A, 1200V, T
C
= 25
o
C
• 1200V Switching SOA Capability
• Typical Fall Time . . . . . . . . . . . . . . . . 160ns at T
J
= 150
o
C
• Short Circuit Rating
• Low Conduction Loss
•
Thermal Impedance
SPICE Model
www.fairchildsemi.com
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Packaging
JEDEC TO-220AB (ALTERNATE VERSION)
E
COLLECTOR
(FLANGE)
Ordering Information
PART NUMBER
HGTP2N120BND
HGT1S2N120BNDS
PACKAGE
TO-220AB
TO-263AB
BRAND
2N120BND
2N120BND
C
G
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in Tape and Reel, i.e.,
HGT1S2N120BNDS9A.
JEDEC TO-263AB
Symbol
C
G
E
G
COLLECTOR
(FLANGE)
E
FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,598,461
4,682,195
4,803,533
4,888,627
4,417,385
4,605,948
4,684,413
4,809,045
4,890,143
4,430,792
4,620,211
4,694,313
4,809,047
4,901,127
4,443,931
4,631,564
4,717,679
4,810,665
4,904,609
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
4,587,713
4,644,637
4,801,986
4,883,767
©2001 Fairchild Semiconductor Corporation
HGTP2N120BND, HGT1S2N120BNDS Rev. B
HGTP2N120BND, HGT1S2N120BNDS
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
HGTP2N120BND
HGT1S2N120BNDS
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
CES
Collector Current Continuous
At T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C25
At T
C
= 110
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
CM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GEM
Switching Safe Operating Area at T
J
= 150
o
C (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA
Power Dissipation Total at T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Power Dissipation Derating T
C
> 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, see Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
Short Circuit Withstand Time (Note 2) at V
GE
= 15V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t
SC
Short Circuit Withstand Time (Note 2) at V
GE
= 12V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t
SC
300
260
8
15
o
C
o
C
UNITS
V
A
A
A
V
V
W
W/
o
C
o
C
1200
12
5.6
20
±
20
±
30
12A at 1200V
104
0.83
-55 to 150
µ
s
µ
s
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Pulse width limited by maximum junction temperature.
2. V
CE(PK)
= 840V, T
J
= 125
o
C, R
G
= 51
Ω
.
Electrical Specifications
PARAMETER
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
CES
I
CES
TEST CONDITIONS
I
C
= 250
µ
A, V
GE
= 0V
V
CE
= 1200V
T
C
= 25
o
C
T
C
= 125
o
C
T
C
= 150
o
C
MIN
1200
-
-
-
-
-
6.0
-
12
-
-
-
-
-
-
-
-
-
TYP
-
-
50
-
2.45
3.6
6.8
-
-
10.2
24
32
21
11
185
100
370
195
MAX
-
250
-
0.6
2.7
4.2
-
±
250
-
-
30
39
25
15
240
130
500
270
UNITS
V
µ
A
µ
A
mA
V
V
V
nA
A
V
nC
nC
ns
ns
ns
ns
µ
J
µ
J
Collector to Emitter Breakdown Voltage
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
V
CE(SAT)
I
C
= 2.3A,
V
GE
= 15V
T
C
= 25
o
C
T
C
= 150
o
C
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
Gate to Emitter Plateau Voltage
On-State Gate Charge
V
GE(TH)
I
GES
SSOA
V
GEP
Q
G(ON)
I
C
= 40
µ
A, V
CE
= V
GE
V
GE
=
±
20V
T
J
= 150
o
C, R
G
= 51
Ω,
V
GE
= 15V,
L = 400
µ
H, V
CE(PK)
= 1200V
I
C
= 2.3A, V
CE
= 600V
I
C
= 10A,
V
CE
= 600V
V
GE
= 15V
V
GE
= 20V
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy
Turn-Off Energy (Note 3)
t
d(ON)I
t
rI
t
d(OFF)I
t
fI
E
ON
E
OFF
IGBT and Diode at T
J
= 25
o
C
I
CE
= 2.3A
V
CE
= 960V
V
GE
= 15V
R
G
= 51
Ω
L = 5mH
Test Circuit (Figure 20)
©2001 Fairchild Semiconductor Corporation
HGTP2N120BND, HGT1S2N120BNDS Rev. B
HGTP2N120BND, HGT1S2N120BNDS
Electrical Specifications
PARAMETER
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy
Turn-Off Energy (Note 3)
Diode Forward Voltage
Diode Reverse Recovery Time
T
C
= 25
o
C, Unless Otherwise Specified
(Continued)
SYMBOL
t
d(ON)I
t
rI
t
d(OFF)I
t
fI
E
ON
E
OFF
V
EC
t
rr
I
EC
= 2.3A
I
EC
= 2.3A, dl
EC
/dt = 200A/µs
I
EC
= 1A, dl
EC
/dt = 200A/µs
Thermal Resistance Junction To Case
R
θJC
IGBT
Diode
NOTE:
3. Turn-Off Energy Loss (E
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (I
CE
= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
TEST CONDITIONS
IGBT and Diode at T
J
= 150
o
C
I
CE
= 2.3A
V
CE
= 960V
V
GE
= 15V
R
G
= 51
Ω
L = 5mH
Test Circuit (Figure 20)
MIN
-
-
-
-
-
-
-
-
-
-
-
TYP
25
11
195
160
725
280
-
52
38
-
-
MAX
30
15
260
200
1000
380
3.2
60
44
1.20
2.5
UNITS
ns
ns
ns
ns
µ
J
µ
J
V
ns
ns
o
C/W
o
C/W
Typical Performance Curves
12
I
CE
, DC COLLECTOR CURRENT (A)
Unless Otherwise Specified
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
14
12
10
8
6
4
2
0
T
J
= 150
o
C, R
G
= 51Ω, V
GE
= 15V, L = 1mH
V
GE
= 15V
10
8
6
4
2
0
25
50
75
100
125
T
C
, CASE TEMPERATURE (
o
C)
150
0
200
400
600
800
1000
1200
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
1400
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
©2001 Fairchild Semiconductor Corporation
HGTP2N120BND, HGT1S2N120BNDS Rev. B
HGTP2N120BND, HGT1S2N120BNDS
Typical Performance Curves
f
MAX
, OPERATING FREQUENCY (kHz)
Unless Otherwise Specified
(Continued)
t
SC
, SHORT CIRCUIT WITHSTAND TIME (µs)
V
CE
= 840V, R
G
= 51Ω, T
J
= 125
o
C
I
SC
, PEAK SHORT CIRCUIT CURRENT (A)
7
5
25
40
T
J
= 150
o
C, R
G
= 51Ω, L = 5mH, V
CE
= 960V
T
C
= 75
o
C, V
GE
= 15V, IDEAL DIODE
100
T
C
75
o
C
75
o
C
V
GE
15V
12V
20
t
SC
I
SC
35
50
f
MAX1
= 0.05 / (t
d(OFF)I
+ t
d(ON)I
)
f
MAX2
= (P
D
- P
C
) / (E
ON
+ E
OFF
)
V
GE
P
C
= CONDUCTION DISSIPATION T
C
o
C 15V
(DUTY FACTOR = 50%)
110
R
ØJC
= 1.2
o
C/W, SEE NOTES
110
o
C 12V
0.5
15
30
10
25
10
5
12
13
14
15
V
GE
, GATE TO EMITTER VOLTAGE (V)
20
1.0
2.0
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
5.0
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
10
10
T
C
= -55
o
C
8
T
C
= 25
o
C
8
T
C
= 25
o
C
6
T
C
= -55
o
C
6
T
C
= 150
o
C
4
4
T
C
= 150
o
C
2
DUTY CYCLE < 0.5%, V
GE
= 12V
PULSE DURATION = 250µs
0
0
1
2
3
4
5
6
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
7
2
DUTY CYCLE < 0.5%, V
GE
= 15V
PULSE DURATION = 250µs
0
0
1
2
3
4
5
6
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
2.0
E
ON
, TURN-ON ENERGY LOSS (mJ)
E
OFF
, TURN-OFF ENERGY LOSS (µJ)
R
G
= 51Ω, L = 5mH, V
CE
= 960V
1.5
400
R
G
= 51Ω, L = 5mH, V
CE
= 960V
350
300
250
200
150
100
50
0
0
1
2
3
4
T
J
= 25
o
C, V
GE
= 12V OR 15V
T
J
= 150
o
C, V
GE
= 12V OR 15V
T
J
= 150
o
C, V
GE
= 12V, V
GE
= 15V
1.0
0.5
T
J
= 25
o
C, V
GE
= 12V, V
GE
= 15V
0
0
1
2
3
4
5
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
©2001 Fairchild Semiconductor Corporation
HGTP2N120BND, HGT1S2N120BNDS Rev. B
HGTP2N120BND, HGT1S2N120BNDS
Typical Performance Curves
45
R
G
= 51Ω, L = 5mH, V
CE
= 960V
t
dI
, TURN-ON DELAY TIME (ns)
40
35
30
25
20
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 15V
15
0
1
2
3
4
5
35
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 12V
t
rI
, RISE TIME (ns)
30
25
20
15
10
5
0
0
1
3
4
2
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
5
T
J
= 25
o
C OR T
J
= 150
o
C, V
GE
= 15V
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 12V
Unless Otherwise Specified
(Continued)
40
R
G
= 51Ω, L = 5mH, V
CE
= 960V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
450
t
d(OFF)I
, TURN-OFF DELAY TIME (ns)
400
350
300
250
200
150
100
0
R
G
= 51Ω, L = 5mH, V
CE
= 960V
400
350
300
250
R
G
= 51Ω, L = 5mH, V
CE
= 960V
V
GE
= 12V, V
GE
= 15V, T
J
= 150
o
C
t
fI
, FALL TIME (ns)
T
J
= 150
o
C, V
GE
= 12V OR 15V
200
150
100
50
V
GE
= 12V, V
GE
= 15V, T
J
= 25
o
C
3
2
1
4
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
5
T
J
= 25
o
C, V
GE
= 12V OR 15V
0
1
2
3
4
5
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
30
25
20
15
10
5
0
7
8
9
10
11
12
13
14
15
V
GE
, GATE TO EMITTER VOLTAGE (V)
V
GE
, GATE TO EMITTER VOLTAGE (V)
DUTY CYCLE < 0.5%, V
CE
= 20V
PULSE DURATION = 250µs
20
I
G (REF)
= 1mA, R
L
= 260Ω, T
C
= 25
o
C
15
V
CE
= 1200V
10
V
CE
= 400V
5
V
CE
= 800V
T
C
= 25
o
C
T
C
= 150
o
C
T
C
= -55
o
C
0
0
5
10
20
25
15
Q
G
, GATE CHARGE (nC)
30
35
FIGURE 13. TRANSFER CHARACTERISTIC
FIGURE 14. GATE CHARGE WAVEFORMS
©2001 Fairchild Semiconductor Corporation
HGTP2N120BND, HGT1S2N120BNDS Rev. B
stm32/stm8
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