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BZD27-C15

产品描述Trans Voltage Suppressor Diode, 150W, 15V V(RWM), Unidirectional, 1 Element, Silicon, ROHS COMPLIANT, PLASTIC, MINIMELF-2
产品类别分立半导体    二极管   
文件大小113KB,共4页
制造商EIC [EIC discrete Semiconductors]
标准  
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BZD27-C15概述

Trans Voltage Suppressor Diode, 150W, 15V V(RWM), Unidirectional, 1 Element, Silicon, ROHS COMPLIANT, PLASTIC, MINIMELF-2

BZD27-C15规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证符合
厂商名称EIC [EIC discrete Semiconductors]
零件包装代码MELF
包装说明O-PELF-R2
针数2
Reach Compliance Codecompliant
ECCN代码EAR99
最小击穿电压13.8 V
外壳连接ISOLATED
配置SINGLE
二极管元件材料SILICON
二极管类型TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码O-PELF-R2
最大非重复峰值反向功率耗散150 W
元件数量1
端子数量2
最高工作温度175 °C
最低工作温度-65 °C
封装主体材料PLASTIC/EPOXY
封装形状ROUND
封装形式LONG FORM
峰值回流温度(摄氏度)NOT SPECIFIED
极性UNIDIRECTIONAL
最大功率耗散0.8 W
最大重复峰值反向电压15 V
表面贴装YES
技术ZENER
端子形式WRAP AROUND
端子位置END
处于峰值回流温度下的最长时间NOT SPECIFIED

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Certificate TH97/10561QM
Certificate TW00/17276EM
BZD27 Series
FEATURES :
* High maximum operating temperature
* Low leakage current
* Excellent stability
* Zener working voltage range: 3.6 to 270 V for 46 types
* Transient suppressor stand-off voltage range:
6.2 to 430 V for 45 types
VOLTAGE REGULATOR DIODES
MELF (Plastic)
Cathode Mark
φ
0.102 (2.6)
0.094 (2.4)
0.022(0.55)
0.205(5.2)
0.189(4.8)
* Pb / RoHS Free
MECHANICAL DATA :
* Case : Molded plastic
* Terminals : Plated Terminals, solderable per
MIL-STD-750 Method 2026
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.116 gram
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS
Parameter
Total Power dissipation
BZD27-C3V6 to BZD27-C6V8
BZD27-C7V5 to BZD27-C510
Total Power dissipation
BZD27-C3V6 to BZD27-C6V8
BZD27-C7V5 to BZD27-C510
Non-repetitive peak reverse
power dissipation
Non-repetitive peak reverse power
dissipation (BZD27-C7V5 to -C510)
Forward voltage
Junction and Storage Temperature Range
BZD27-C3V6 to BZD27-C6V8
BZD27-C7V5 to BZD27-C510
T
J
, T
STG
-65
-65
+200
+175
°C
P
ZSM
P
RSM
V
F
P
tot
PCB mounted
Tamb = 60 °C, see Fig. 1
Tamb = 55 °C, see Fig. 2
tp = 100 µs; square pulse;
Tj = 25°C prior to surge; see Fig. 5
10/1000 µs exponential pulse (see Fig. 5)
Tj = 25°C prior to surge
I
F
= 0.2 A; Tj = 25 °C; see Fig. 3
-
-
-
-
-
0.8
0.8
300
150
1.2
W
W
V
W
P
tot
Symbol
Condition
Ttp = 105 °C; see Fog. 1 and 2
Min.
-
-
Max.
1.7
2.3
Unit
W
THERMAL CHARACTERISTICS
Parameter
Thermal resistance from junction to tie-point
BZD27-C3V6 to BZD27-C6V8
BZD27-C7V5 to BZD27-C510
Thermal resistance from junction to ambient
BZD27-C3V6 to BZD27-C6V8
BZD27-C7V5 to BZD27-C510
Note :
(1) Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer
40 µm on an must space.
Symbol
R
th j-tp
Condition
Value
55
30
Unit
K/W
R
th j-a
Note 1
175
150
K/W
Page 1 of 4
Rev. 01 : November 7, 2006

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