REVISIONS
LTR
DESCRIPTION
DATE (YR-MO-DA)
APPROVED
A
B
C
Added case outline letter U to the drawing. Removed ESDS
requirements from drawing. Editorial changes throughout.
Changes in accordance with NOR 5962-R117-92
Redrawn with changes. Add device type 05. Add software data
protect. Added vendor CAGE 60395 and 61394 as approved sources.
Editorial changes throughout.
Changes in accordance with NOR 5962-R216-93
Updated boilerplate. Removed data retention and endurance tests
from drawing. Removed programming specifics from drawing. - glg
90-01-26
92-01-27
92-12-18
M. A. Frye
M. A. Frye
M.A. Frye
D
E
93-08-20
00-08-07
M.A. Frye
Raymond Monnin
REV
SHEET
REV
SHEET
REV STATUS
OF SHEETS
PMIC N/A
E
15
E
16
E
17
E
18
REV
SHEET
PREPARED BY
Kenneth Rice
CHECKED BY
Ray Monnin
E
19
E
1
E
2
E
3
E
4
E
5
E
6
E
7
E
8
E
9
E
10
E
11
E
12
E
13
E
14
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216
STANDARD
MICROCIRCUIT
DRAWING
THIS DRAWING IS AVAILABLE
FOR USE BY ALL
DEPARTMENTS
AND AGENCIES OF THE
DEPARTMENT OF DEFENSE
AMSC N/A
APPROVED BY
Michael A. Frye
MICROCIRCUIT, MEMORY, DIGITAL, CMOS,
32K x 8 EEPROM, MONOLITHIC SILICON
DRAWING APPROVAL DATE
89-02-13
REVISION LEVEL
E
SIZE
A
SHEET
1 OF
19
5962-E397-00
CAGE CODE
67264
5962-88634
DSCC FORM 2233
APR 97
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
1. SCOPE
1.1 Scope. This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in
accordance with MIL-PRF-38535, appendix A.
1.2 Part or Identifying Number (PIN). The complete PIN shall be as shown in the following example:
5962-88634
|
|
|
|
Drawing number
01
|
|
|
|
Device type
(see 1.2.1)
U
|
|
|
|
Case outline
(see 1.2.2)
X
|
|
|
|
Lead finish per
MIL-M-38510
1.2.1 Device type(s). The device type(s) shall identify the circuit function as follows:
Device
type
01
02
03
04
05
Generic
number
See 6.6
See 6.6
See 6.6
See 6.6
See 6.6
Circuit
function
32K x 8 EEPROM
32K x 8 EEPROM
32K x 8 EEPROM
32K x 8 EEPROM
32K x 8 EEPROM
Access Write
time
speed
120 ns 10 ms
120 ns 3 ms
90 ns 10 ms
90 ns
3 ms
70 ns 10 ms
Write mode
byte/page
byte/page
byte/page
byte/page
byte/page
End of write indicator
DATA polling/toggle bit
DATA polling/toggle bit
DATA polling/toggle bit
DATA polling/toggle bit
DATA polling/toggle bit
Endurance
10,000 cycles
10,000 cycles
10,000 cycles
10,000 cycles
10,000 cycles
1.2.2 Case outline(s). The case outline(s) shall be as designated in MIL-STD-1835 and as follows:
Outline letter
U
X
Y
Z
Descriptive designator
See figure 1
GDIP1-T28 or CDIP2-T28
CQCC1-N32
CDFP4-F28
Terminals
28
28
32
28
Package style
Pin grid array
Dual-in-line
Rectangular leadless chip carrier
Flat pack
1.3 Absolute maximum ratings. 1/
Supply voltage range (V
CC
) ........................................................-0.3 V dc to +6.25 V dc
Storage temperature range........................................................-65°C to +150°C
Maximum power dissipation (P
D
) ...............................................1.0 W
Lead temperature (soldering, 10 seconds) ................................+300°C
Junction temperature (T
J
) 2/ .....................................................+175°C
Thermal resistance, junction-to-case (
"
JC
) ................................See MIL-STD-1835
Input voltage range (V
IL
, V
IH
)......................................................-0.3 V dc to +6.25 V dc
Data retention ............................................................................20 years (minimum)
Endurance..................................................................................10,000 cycles (minimum)
Chip clear voltage (V
h
) ...............................................................13.0 V dc
1.4 Recommended operating conditions. 1/
Supply voltage range (V
CC
) ........................................................+4.5 V dc to +5.5 V dc
Case operating temperature range (T
C
).....................................-55°C to +125°C
Input voltage, low range (V
IL
) .....................................................-0.1 V dc to +0.8 V dc
Input voltage, high range (V
IH
) ...................................................+2.0 V dc to V
CC
+ 0.3 V dc
1/ All voltages are referenced to V
SS
(ground).
2/ Maximum junction temperature shall not be exceeded except for allowable short duration burn-in screening conditions in
accordance with method 5004 of MIL-STD-883.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
A
REVISION LEVEL
E
5962-88634
SHEET
2
2. APPLICABLE DOCUMENTS
2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part
of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the
issue of the Department of Defense Index of Specifications and Standards (DoDISS) and supplement thereto, cited in the
solicitation.
SPECIFICATION
DEPARTMENT OF DEFENSE
MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.
STANDARDS
DEPARTMENT OF DEFENSE
MIL-STD-883 - Test Method Standard Microcircuits.
MIL-STD-973 - Configuration Management.
MIL-STD-1835 - Interface Standard For Microcircuit Case Outlines.
HANDBOOKS
DEPARTMENT OF DEFENSE
MIL-HDBK-103 - List of Standard Microcircuit Drawings (SMD's).
MIL-HDBK-780 - Standard Microcircuit Drawings.
(Unless otherwise indicated, copies of the specification, standards, and handbooks are available from the Standardization
Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)
2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text
of this drawing shall take precedence. Nothing in this document, however, supersedes applicable laws and regulations unless
a specific exemption has been obtained.
3. REQUIREMENTS
3.1 Item requirements. The individual item requirements shall be in accordance with MIL-PRF-38535, appendix A for non-
JAN class level B devices and as specified herein. Product built to this drawing that is produced by a Qualified Manufacturer
Listing (QML) certified and qualified manufacturer or a manufacturer who has been granted transitional certification to MIL-PRF-
38535 may be processed as QML product in accordance with the manufacturers approved program plan and qualifying activity
approval in accordance with MIL-PRF-38535. This QML flow as documented in the Quality Management (QM) plan may make
modifications to the requirements herein. These modifications shall not affect form, fit, or function of the device. These
modifications shall not affect the PIN as described herein. A "Q" or "QML" certification mark in accordance with MIL-PRF-
38535 is required to identify when the QML flow option is used.
3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified
in MIL-PRF-38535 and herein.
3.2.1 Terminal connections. The terminal connections shall be as specified on figure 2.
3.2.2 Truth table(s). The truth table(s) for unprogrammed devices shall be as specified on figure 3.
3.2.2.1 Programmed devices. The requirements for supplying programmed devices are not part of this drawing.
3.2.3 Case outlines. The case outlines shall be in accordance with figure 1 and 1.2.2 herein.
3.3 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are
as specified in table I and shall apply over the full case operating temperature range.
3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical
tests for each subgroup are described in table I.
3.5 Marking. Marking shall be in accordance with MIL-PRF-38535, appendix A. The part shall be marked with the PIN
listed in 1.2 herein. In addition, the manufacturer's PIN may also be marked as listed in MIL-HDBK-103 (see 6.6 herein). For
packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the
option of not marking the "5962-" on the device.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
A
REVISION LEVEL
E
5962-88634
SHEET
3
TABLE I. Electrical performance characteristics.
Test
|
| Symbol
|
|
|
|
|
|I
CC1
|
|
|
|
|
|I
CC2
|
|
|
|
|
|I
CC3
|
|
|
|
|
|I
IH
|
|
|I
IL
|
|
|I
OHZ
|
|
|I
OLZ
|
|
|V
IL
|
|
|V
IH
|
|
|V
OL
|
|
|
|V
OH
|
|
|
|
Conditions
| -55°C < T
C
< +125°C,
|V
SS
= 0 V, 4.5 V < V
CC
< 5.5 V,
| unless otherwise specified 1/
|
|
|CE = OE = V
IL
, WE = V
IH
,
|all I/O's = 0.0 mA,
|inputs = V
CC
= 5.5 V,
|t
AVAV
= t
AVAV
(min)
|
|
|CE = V
IH
, OE = V
IL
,
|all I/O's = 0.0 mA,
|inputs = V
CC
- 0.3 V,
|f = 0.0 MHz
|
|
|CE = V
CC
- 0.3 V,
|all I/O's = 0.0 mA,
|inputs = V
IL
or V
CC
- 0.3 V,
|f = 0.0 MHz
|
|
|V
IN
= 5.5 V
|
|
|V
IN
= 0.1 V
|
|
|V
OUT
= 5.5 V, CE = V
IH
2/
|
|
|V
OUT
= 0.1 V, CE = V
IH
2/
|
|
|
|
|
|
|
|
|I
OL
= 6.0 mA, V
IH
= 2.0 V,
|V
CC
= 4.5 V, V
IL
= 0.8 V
|
|
|I
OH
= -4.0 mA, V
IH
= 2.0 V,
|V
CC
= 4.5 V, V
IL
= 0.8 V
|
|
| Group A
|subgroups
|
|
|
|
| 1, 2, 3
|
|
|
|
|
| 1, 2, 3
|
|
|
|
|
| 1, 2, 3
|
|
|
|
|
| 1, 2, 3
|
|
| 1, 2, 3
|
|
| 1, 2, 3
|
|
| 1, 2, 3
|
|
| 1, 2, 3
|
|
| 1, 2, 3
|
|
| 1, 2, 3
|
|
|
| 1, 2, 3
|
|
|
|Device
| types
|
|
|
|
| All
|
|
|
|
|
| 01,02
|
|
| 03,04,
| 05
|
| 01,02
|
|
| 03,04,
| 05
|
| All
|
|
| All
|
|
| All
|
|
| All
|
|
| All
|
|
| All
|
|
| All
|
|
|
| All
|
|
|
|
Limits
|
|
| Min
| Max
|
|
|
|
|
|
|
| 80
|
|
|
|
|
|
|
|
|
|
|
| 3
|
|
|
|
|
| 60
|
|
|
|
|
|350
|
|
|
|
|
| 60
|
|
|
|
|
| 10
|
|
|
|
|-10
|
|
|
|
|
|
| 10
|
|
|
|
|-10
|
|
|
|
|
| -0.1
| 0.8
|
|
|
|
| 2.0
|V
CC
|
|+0.3 V
|
|
|
| 0.45
|
|
|
|
|
|
| 2.4
|
|
|
|
|
|
| Unit
|
|
|
|
|
| mA
|
|
|
|
|
| mA
|
|
|
|
|
| µA
|
|
| mA
|
|
| µA
|
|
| µA
|
|
| µA
|
|
| µA
|
|
| V
|
|
| V
|
|
| V
|
|
|
| V
|
|
Supply current
(operating)
Supply current
(TTL standby)
Supply current
(CMOS standby)
Input leakage (high)
Input leakage (low)
Output leakage (high)
Output leakage (low)
Input voltage low
Input voltage high
Output voltage low
Output voltage high
See footnotes at end of table.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
A
REVISION LEVEL
E
5962-88634
SHEET
4
TABLE I. Electrical performance characteristics - Continued.
Test
|
| Symbol
|
|
|
|
|
|I
OE
|
|
|C
I
|
|
|
|
|C
O
|
|
|
|
|t
AVAV
|
|
|
|
|
|t
AVQV
|
|
|
|
|
|t
ELQV
|
|
|
|
|
|t
OLQV
|
|
|
|
|t
ELQX
|
|
|
|
Conditions
|
-55°C < T
C
< +125°C,
| V
SS
= 0 V, 4.5 V < V
CC
< 5.5 V,
|
unless otherwise specified 1/
|
|
|V
H
= 13 V
|
|
|V
I
= 0 V, V
CC
= 5.0 V,
|T
A
= +25°C, f = 1 MHz,
|see 4.3.1c 3/ 4/
|
|
|V
O
= 0 V, V
CC
= 5.0 V,
|T
A
= +25°C, f = 1 MHz,
|see 4.3.1c 3/ 4/
|
|
|See figure 4 5/
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
| Group A
|subgroups
|
|
|
|
| 1, 2, 3
|
|
| 4
|
|
|
|
| 4
|
|
|
|
|9, 10, 11
|
|
|
|
|
|9, 10, 11
|
|
|
|
|
|9, 10, 11
|
|
|
|
|
|9, 10, 11
|
|
|
|
|9, 10, 11
|
|
|
|Device
| types
|
|
|
|
| All
|
|
| All
|
|
|
|
| All
|
|
|
|
| 01,02
|
| 03,04
|
| 05
|
| 01,02
|
| 03,04
|
| 05
|
| 01,02
|
| 03,04
|
| 05
|
| 01,02
|
| 03,04,
| 05
|
| All
|
|
|
|
Limits
|
|
| Min
| Max
|
|
|
|
|
|
|-10
|100
|
|
|
|
|
| 10
|
|
|
|
|
|
|
|
|
| 10
|
|
|
|
|
|
|
|
|120
|
|
|
| 90
|
|
|
| 70
|
|
|
|
|120
|
|
|
| 90
|
|
|
| 70
|
|
|
|120
|
|
|
| 90
|
|
|
| 70
|
|
|
| 50
|
|
|
| 40
|
|
|
|
| 10
|
|
|
|
|
|
| Unit
|
|
|
|
|
| µA
|
|
| pF
|
|
|
|
| pF
|
|
|
|
| ns
|
|
|
|
|
| ns
|
|
|
|
|
| ns
|
|
|
|
|
| ns
|
|
|
|
| ns
|
|
OE high leakage
(chip erase)
Input capacitance
Output capacitance
Read cycle time
Address access time
Chip enable
access time
Output enable access
Chip enable to output
in low Z 4/
See footnotes at end of table.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
A
REVISION LEVEL
E
5962-88634
SHEET
5
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