(Standard type)
TESTING
VDE
(Reinforced type)
GU (General Use)-E Type
[1-Channel (Form B) Type]
PhotoMOS
RELAYS
4. Low-level off state leakage current
The SSR has an off state leakage current
of several milliamperes, whereas the Pho-
toMOS relay has only 100 pA even with
the rated load voltage of 400 V
(AQV414E).
5. Reinforced insulation 5,000 V type
also available.
More than 0.4 mm internal insulation dis-
tance between inputs and outputs. Con-
forms to EN41003, EN60950 (reinforced
insulation).
,
,
8.8±0.05
.346±.002
6.4±0.05
.252±.002
3.9±0.2
.154±.008
8.8±0.05
.346±.002
,
,
Cross section of the normally-closed type of
power MOS
6.4±0.05
.252±.002
Passivation membrane
Intermediate
Source electrode Gate electrode
insulating
membrane
Gate
oxidation
membrane
3.6±0.2
.142±.008
N
+
P
+
N
+
N
+
P
+
N
+
N–
mm
inch
Drain
electrode
1
2
3
N
+
6
5
4
FEATURES
1. Low on resistance for normally-
closed type
This has been realized thanks to the built-
in MOSFET processed by our proprietary
method, DSD (Double-diffused and Se-
lective Doping) method.
2. Controls low-level analog signals
PhotoMOS relays feature extremely low
closed-circuit offset voltage to enable
control of low-level analog signals without
distortion.
3. High sensitivity, low ON resistance
Can control a maximum 0.13 A load cur-
rent with a 5 mA input current. Low ON re-
sistance of 18
Ω
(AQV410EH). Stable
operation because there are no metallic
contact parts.
TYPICAL APPLICATIONS
• Security equipment
• Telepone equipment (Dial pulse)
• Measuring equipment
TYPES
Part No.
Output rating*
Type
I/O isolation
voltage
Through hole
terminal
Tube packing style
AQV414E
AQV410EH
AQV414EH
AQV414EA
AQV410EHA
AQV414EHA
Surface-mount terminal
Tape and reel packing style
Picked from the Picked from the
1/2/3-pin side
4/5/6-pin side
AQV414EAX
AQV410EHAX
AQV414EHAX
AQV414EAZ
AQV410EHAZ
AQV414EHAZ
Packing quantity
Load
voltage
400 V
350 V
400 V
Load
current
120 mA
130 mA
120 mA
Tube
1 tube contains
50 pcs.
1 batch contains
500 pcs.
Tape and reel
AC/DC
type
1,500 V AC
(Standard)
5,000 V AC
(Reinforced)
1,000 pcs.
*Indicate the peak AC and DC values.
Note: For space reasons, the package type indicator "X" and "Z" are omitted from the seal.
RATING
1. Absolute maximum ratings (Ambient temperature: 25
°
C
77
°
F)
Item
LED forward current
LED reverse voltage
Peak forwrd current
Power dissipation
Load voltage (peak AC)
Continuous load current
Output
Peak load current
Power dissipation
Total power dissipation
I/O isolation voltage
Temperature
limits
Operating
Storage
I
peak
P
out
P
T
V
iso
T
opr
T
stg
Symbol
I
F
V
R
I
FP
P
in
V
L
I
L
A
B
C
Type of
connection
AQV414E(A)
AQV410EH(A) AQV414EH(A)
50 mA
3V
1A
75 mW
350 V
0.13 A
0.15 A
0.17 A
0.4 A
500 mW
550 mW
5,000 V AC
Remarks
Input
f = 100 Hz, Duty factor = 0.1%
400 V
0.12 A
0.13 A
0.15 A
0.3 A
400 V
0.12 A
0.13 A
0.15 A
0.3 A
A connection: Peak AC, DC
B,C connection: DC
A connection: 100 ms (1 shot),
V
L
= DC
1,500 V AC
5,000 V AC
Non-condensing at low
temperatures
–40
°
C to +85
°
C
–40
°
F to +185
°
F
–40
°
C to +100
°
C
–40
°
F to +212
°
F
125
AQV414E, AQV41
r
EH
2. Electrical characteristics (Ambient temperature: 25
°
C
77
°
F)
Item
LED operate (OFF) current
Input
LED reverse (ON) current
LED dropout voltage
Typical
Maximum
Minimum
Typical
Typical
Maximum
Typical
Maximum
Typical
On resistance
Output
Maximum
Typical
R
on
Maximum
Off state leakage current
Operate
(OFF) time*
Reverse
(ON) time*
Maximum
Typical
Maximum
Typical
Maximum
Typical
Maximum
Minimum
I
Leak
T
off
T
on
C
iso
R
iso
—
—
—
—
—
C
R
on
B
Type of
Symbol connec-
tion
I
Foff
I
Fon
V
F
R
on
—
—
—
A
AQV414E(A)
1.45 mA
AQV410EH(A) AQV414EH(A)
1.9 mA
3.0 mA
1.75 mA
Condition
I
L
= Max.
I
L
= Max.
I
F
= 5 mA
I
F
= 0 mA
I
L
= Max.
Within 1 s on time
I
F
= 0 mA
I
L
= Max.
Within 1 s on time
I
F
= 0 mA
I
L
= Max.
Within 1 s on time
I
F
= 5 mA
V
L
= Max.
I
F
= 0 mA
¨
5 mA
I
L
= Max.
I
F
= 5 mA
¨
0 mA
I
L
= Max.
f = 1 MHz
V
B
= 0
500 V DC
For type of connection, see Page 32.
0.3 mA
0.4 mA
0.3 mA
1.40 mA
1.8 mA
1.70 mA
1.14 V (1.25 V at I
F
= 50 mA)
1.5 V
26
Ω
18
Ω
25.2
Ω
50
Ω
20
Ω
25
Ω
10
Ω
12.5
Ω
1
µ
A
0.7 ms
2.0 ms
0.1 ms
1.0 ms
0.8 pF
35
Ω
13
Ω
17.5
Ω
6.5
Ω
8.8
Ω
10
µ
A
1.5 ms
3.0 ms
0.3 ms
1.5 ms
0.8 pF
1.5 pF
1,000 M
Ω
50
Ω
19
Ω
25
Ω
10
Ω
12.5
Ω
10
µ
A
1.3 ms
3.0 ms
0.3 ms
1.5 ms
0.8 pF
Switching
speed
Transfer
characteristics
I/O capacitance
Initial I/O isolation
resistance
Note: Recommendable LED forward current
Standard type I
F
= 5 mA
Reinforced type I
F
= 5 to 10 mA
*Operate/Reverse time
Input
Output
10%
90%
Toff
Ton
s
For Dimensions, see Page 27.
s
For Schematic and Wiring Diagrams, see Page 32.
s
For Cautions for Use, see Page 36.
REFERENCE DATA
1. Load current vs. ambient temperature char-
acteristics
Allowable ambient temperature: –40
°
C to +85
°
C
–40
°
F to +185
°
F
Type of connection: A
140
120
Load current, mA
100
80
60
40
10
20
AQV414E
0
–40 –20
0
20
40
60
80 85 100
Ambient temperature,
°C
0
–40
–20
0
20 40
60 80
85
Ambient temperature,
°C
0
–40
–20
0
20 40
60
80 85
Ambient temperature,
°C
AQV410EH
AQV414E(H)
2. On resistance vs. ambient temperature char-
acteristics
Measured portion: between terminals 4 and 6;
LED current: 0 mA; Load voltage: Max. (DC);
Continuous load current: Max. (DC)
50
3. Operate (OFF) time vs. ambient temperature
characteristics
LED current: 5mA; Load voltage: Max. (DC);
Continuous load current: Max. (DC)
5.0
Operate (OFF) time, ms
On resistance,
Ω
40
4.0
AQV410EH
AQV414EH
30
AQV414(EH)
3.0
20
AQV410EH
2.0
1.0
126
AQV414E, AQV41
r
EH
4. Reverse (ON) time vs. ambient temperature
characteristics
LED current: 5 mA; Load voltage: Max. (DC);
Continuous load current: Max. (DC)
0.8
5. LED operate (OFF) current vs. ambient tem-
perature characteristics
Load voltage: Max. (DC);
Continuous load current: Max. (DC)
LED operate (OFF) curremt, mA
5
6. LED reverse (ON) current vs. ambient tem-
perature characteristics
Load voltage: Max. (DC);
Continuous load current: Max. (DC)
5
LED reverse (ON) current, mA
Reverse (ON) time, ms
0.6
AQV410EH
AQV414EH
4
AQV410EH
AQV414EH
3
4
AQV410EH
AQV414EH
3
0.4
2
AQV414E
1
2
AQV414E
0.2
AQV414E
0
1
–40 –20
0
20 40
60
80 85
Ambient temperature,
°C
0
–40
–20
0
20
40
60
8085
Ambient temperature,
°C
0
–40 –20
0
20
40
60
80 85
Ambient temperature,
°C
7. LED dropout voltage vs. ambient tempera-
ture characteristics
LED current: 5 to 50 mA
1.5
LED dropout voltage, V
1.4
1.3
1.2
1.1
1.0
0
50mA
30mA
20mA
10mA
5mA
8. Voltage vs. current characteristics of output
at MOS portion
Measured portion: between terminals 4 and 6;
Ambient temperature: 25
°
C
77
°
F
140
AQV410EH
120
100
AQV414EH
80
60
AQV414E
40
20
–3 –2.5 –2 –1.5 –1 –0.5
0.5 1 1.5 2 2.5 3
–20
Voltage, V
–40
–60
–80
–100
–120
–140
Current, mA
9. Off state leakage current
Measured portion: between terminals 4 and 6;
LED current: 5 mA; Ambient temperature: 25°C
77°F
Off state leakage current, A
10
–3
10
–6
10
–9
10
–12
0
20
40
60
80
Load voltage, V
100
–40
–20
0
20
40 60
80 85
Ambient temperature,
°C
10. LED forward current vs. operate (OFF) time
characteristics
Measured portion: between terminals 4 and 6;
Load voltage: Max. (DC); Continuous load current:
Max. (DC); Ambient temperature: 25°C
77°F
10.0
Operate (OFF) time, ms
11. LED forward current vs. reverse (ON) time
characteristics
Measured portion: between terminals 4 and 6;
Load voltage: Max. (DC); Continuous load current:
Max. (DC); Ambient temperature: 25°C
77°F
0.5
AQV414EH
12. Applied voltage vs. output capacitance
characteristics
Measured portion: between terminals 4 and 6;
Frequency: 1 MHz;
Ambient temperature: 25°C
77°F
120
Output capacitance, pF
100
80
60
40
20
0
AQV410EH
AQV414EH
Reverse (ON) time, ms
8.0
0.4
6.0
0.3
AQV410EH
4.0
0.2
AQV414E
0.1
2.0
AQV414E
50
20
30
40
LED forward current, mA
0
10
0
0
10
20
30
40
50
LED forward current, mA
60
10
20
30
40
50
Applied voltage, V
5/7/2001
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127
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