Midium Power Transistors (50V / 1A)
MP6X12
Structure
NPN Silicon epitaxial planar transistor
Dimensions
(Unit : mm)
MPT6
Features
1) Low saturation voltage
V
CE (sat)
= 0.35V (Max.) (I
C
/ I
B
= 500mA / 25mA)
2) High speed switching
(1) Tr.1
(2) Tr.1
(3) Tr.2
(4) Tr.2
(5) Tr.2
(6) Tr.1
Emitter
Base
Collector
Emitter
Base
Collector
(6)
(5)
(4)
(1)
(2)
(3)
Applications
Driver
Packaging specifications
Type
Package
Code
Basic ordering unit (pieces)
MPT6
TR
1000
Inner circuit
(6)
(5)
(4)
Absolute maximum ratings
(Ta = 25C)
<It
is the same ratings for the Tr.1 and Tr.2>
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
DC
Pulsed
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
D
P
D
T
j
T
stg
*1
*2
*2
Limits
50
50
6
1
2
2.0
1.4
150
-55 to 150
Unit
V
V
V
A
A
W/Total
W/Element
C
C
(1) Tr.1
(2) Tr.1
(3) Tr.2
(4) Tr.2
(5) Tr.2
(6) Tr.1
Emitter
Base
Collector
Emitter
Base
Collector
(1)
(2)
(3)
*1 Pw=10ms, Single Pulse
*2 Mounted on a 40 x 40 x 0.7[mm] ceramic board.
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1/5
2010.11 - Rev.A
MP6X12
Electrical characteristics
(Ta = 25C)
<It
is the same characteristics for the Tr.1 and Tr.2>
Parameter
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter staturation voltage
DC current gain
Transition frequency
Collector output capacitance
Turn-on time
Storage time
Fall time
*1 PULSED
*2 See switching time test circuit
Symbol
BV
CEO
BV
CBO
BV
EBO
I
CBO
I
EBO
*
1
V
CE(sat)
h
FE
f
T
*
1
Min.
50
50
6
-
-
-
180
-
-
-
-
-
Data Sheet
Typ.
-
-
-
-
-
130
-
360
7
40
410
75
Max.
-
-
-
1
1
350
450
-
-
-
-
-
Unit
V
V
V
A
A
-
MHz
pF
ns
ns
ns
Conditions
I
C
= 1mA
I
C
= 100μA
I
E
= 100μA
V
CB
= 50V
V
EB
= 4V
V
CE
= 2V, I
C
= 50mA
V
CE
= 10V
I
E
=-200mA, f=100MHz
V
CB
= 10V, I
E
=0A
f=1MHz
I
C
= 0.5A, I
B1
= 50mA,
_
I
B2
=-50mA, V
CC
~
10V
mV I
C
= 500mA, I
B
= 25mA
C
ob
t
on
*
2
t
stg
*
2
t
f
*
2
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©2010 ROHM Co., Ltd. All rights reserved.
2/5
2010.11 - Rev.A
MP6X12
5mA
4mA
0.5
Fig.1 Typical Output Characteristics
3.0mA
2.5mA
2.0mA
Data Sheet
Fig.2 DC Current Gain vs. Collector Current
1000
Ta=25°C
0.4
COLLECTOR CURRENT : I
C
[A]
1.5mA
DC CURRENT GAIN : h
FE
0.3
1.0mA
V
CE
=5V
2V
100
0.2
0.5mA
0.1
Ta=25°C
0.0
0
0.5
1
1.5
2
10
1
10
100
1000
10000
COLECTOR TO EMITTER VOLTAGE : V
CE
[V]
COLLECTOR CURRENT : I
C
[mA]
Fig.4 Collector-Emitter Saturation Voltage vs. Collector Current ( I )
1
Fig.3 DC Current Gain vs.Collector Current ( II )
1000
V
CE
=2V
COLLECTOR SATURATION VO
OLTAGE : V
CE
(sat)[V]
Ta=25°C
DC CURRENT GA :h
FE
AIN
0.1
I
C
/I
B
=10
20
50
Ta=125°C
100
75°C
25°C
-40°C
0.01
10
1
10
100
1000
10000
0.001
1
10
100
1000
10000
COLLECTOR CURRENT : I
C
[mA]
Fig.5 Collector-Emitter Saturation Voltage vs. Collector Current(II)
1
COLLECTOR SATURATION VOLTAGE :V
CE
(sat)[V]
10000
V
CE
=2V
COLLECTOR CURRENT : I
C
[mA]
Fig.6 Ground Emitter Propagation Characteristics
0.1
COLLECTOR CURRENT :I
C
[mA]
1000
Ta=125°C
75°C
100
25°C
-40°C
Ta=125°C
0.01
75°C
25°C
-40°C
I
C
/I
B
=20
0.001
1
10
100
1000
10000
10
1
0
0.5
1
1.5
COLLECTOR CURRENT : I
C
[mA]
BASE TO EMITTER VOLTAGE : V
BE
[V]
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©2010 ROHM Co., Ltd. All rights reserved.
3/5
2010.11 - Rev.A
MP6X12
Fig.7 Emitter input capacitance vs. Emitter-Base Voltage
Collector output capacitance vs. Collector-Base Voltage
1000
COLLECTOR OUTPUT CAPACITANCE : Cob[pF]
EMITTER INPUT CAPACITANCE : Cib[pF]
Ta=25°C
f=1MHz
I
E
=0A
I
C
=0A
100
Cib
Data Sheet
Fig.8 Gain Bandwidth Product vs. Emitter Current
1000
Ta=25°C
V
CE
=10V
TRANSITION FREQUENCY : fT[MHz]
100
10
Cob
1
0.1
1
10
COLLECTOR - BASE VOLTAGE : V
CB
[V]
EMITTER - BASE VOLTAGE : V
EB
[V]
100
10
10
100
EMITTER CURRENT : I
E
[mA]
1000
Fig.9 Safe Operating Area
10
1ms
COLLECTOR CURRE
ENT : I
C
[A]
1
10ms
100ms
0.1
DC Ta=25°C
(Mounted on a ceramic board)
Ta=25℃
When one element operated
Single non repetitive pulse
0.01
0.1
1
10
100
COLLECTOR TO EMITTER VOLTAGE :V
CE
[V]
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©2010 ROHM Co., Ltd. All rights reserved.
4/5
2010.11 - Rev.A
MP6X12
Switching time test circuit
Data Sheet
R
L
=20Ω
V
IN
I
B1
I
C
I
B2
Pw
~
50μs
_
DUTY CYCLE
1%
V
CC
_
~
10V
Pw
BASE CURENT WAVEFORM
I
B1
I
B2
t
on
90%
t
stg
t
f
COLLECTOR CURRENT
WAVEFORM
I
C
10%
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©2010 ROHM Co., Ltd. All rights reserved.
5/5
2010.11 - Rev.A
PCB设计
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