Data Sheet
4V Drive Nch + Nch MOSFET
MP6K12
Structure
Silicon N-channel MOSFET
Features
1) Low on-resistance.
2) High power package(MPT6).
3) Low voltage drive(4V drive).
Dimensions
(Unit : mm)
MPT6
(Duel)
(6)
(5)
(4)
(1)
(2)
(3)
Application
Switching
Packaging specifications
Type
MP6K12
Package
Code
Basic ordering unit (pieces)
Taping
TCR
1000
Inner circuit
(6)
(5)
∗1
(4)
∗2
∗2
Absolute maximum ratings
(Ta = 25C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body Diode)
Power dissipation
Channel temperature
Range of storage temperature
*1 Pw10s, Duty cycle1%
*2 Mounted on a ceramic board.
Symbol
V
DSS
V
GSS
Limits
30
20
5
Unit
V
V
A
A
A
A
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Drain
(4) Tr2 Source
(5) Tr2 Gate
(6) Tr1 Drain
∗1
(1)
(2)
(3)
∗1
ESD PROTECTION DIODE
∗2
BODY DIODE
Continuous
Pulsed
Continuous
Pulsed
I
D
I
DP
I
s
I
sp
P
D
Tch
Tstg
*1
12
1.6
12
*1
*2
2.0
W / TOTAL
1.4
W / ELEMENT
150
C
55
to
150
C
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© 2011 ROHM Co., Ltd. All rights reserved.
1/6
2011.04 - Rev.A
MP6K12
Electrical characteristics
(Ta = 25C)
<It is the same ratings for Tr1 and Tr2.>
Parameter
Gatesource leakage
Drainsource breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drainsource onstate
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turnon delay time
Rise time
Turnoff delay time
Fall time
Total gate charge
Gatesource charge
Gatedrain charge
*Pulsed
Data Sheet
Symbol
I
GSS
V
(BR)DSS
I
DSS
V
GS (th)
R
DS (on)
*
Min.
30
1.0
2.5
Typ.
30
40
45
250
90
45
6
27
26
5
4.0
1.2
1.2
Max.
10
1
2.5
42
56
63
Unit
A
V
A
V
Conditions
V
GS
=20V, V
DS
=0V
I
D
=1mA, V
GS
=0V
V
DS
=30V, V
GS
=0V
V
DS
=10V, I
D
=1mA
I
D
=5.0A, V
GS
=10V
m I
D
=5.0A, V
GS
=4.5V
I
D
=5.0A, V
GS
=4.0V
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
I
D
=5.0A, V
DS
=10V
V
DS
=10V
V
GS
=0V
f=1MHz
I
D
=2.5A, V
DD
15V
V
GS
=10V
R
L
=6.0
R
G
=10
I
D
=5.0A, V
DD
15V
V
GS
=5V
l Y
fs
l *
C
iss
C
oss
C
rss
t
d(on)
*
t
r
*
t
d(off)
*
t
f
*
Q
g
*
Q
gs
*
Q
gd
*
Body
diode characteristics
(Source-Drain) (Ta = 25C)
<It is the same ratings for Tr1 and Tr2.>
Parameter
Forward Voltage
*Pulsed
Symbol
V
SD
*
Min.
Typ.
Max.
1.2
Unit
V
Conditions
Is=5.0A, V
GS
=0V
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© 2011 ROHM Co., Ltd. All rights reserved.
2/6
2011.04 - Rev.A
MP6K12
Electrical
characteristic curves
(Ta=25C)
Fig.1 Typical Output Characteristics (
I
)
5
V
GS
= 10V
V
GS
= 4.5V
V
GS
= 4.0V
V
GS
= 3.0V
T
a
=25°C
Pulsed
Data Sheet
Fig.2 Typical Output Characteristics (II)
5
V
GS
= 2.5V
4
DRAIN CURRENT : I
D
[A]
V
GS
= 10V
V
GS
= 4.5V
V
GS
= 4.0V
V
GS
= 2.8V
4
DRAIN CURRENT : I
D
[A]
3
V
GS
= 2.5V
3
2
2
1
V
GS
= 2.0V
0
0
0.2
0.4
0.6
0.8
1
1
V
GS
= 2.0V
T
a
=25°C
Pulsed
0
0
2
4
6
8
10
DRAIN-SOURCE VOLTAGE : V
DS
[V]
DRAIN-SOURCE VOLTAGE : V
DS
[V]
Fig.3 Typical Transfer Characteristics
10
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(
on
)[mW]
V
DS
= 10V
Pulsed
T
a
= 125°C
T
a
= 75°C
T
a
= 25°C
T
a
=
-
25°C
1000
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current (
I
)
T
a
=25°C
Pulsed
DRAIN CURRENT : I
D
[A]
1
0.1
100
.
V
GS
= 4.0V
V
GS
= 4.5V
V
GS
= 10V
0.01
0.001
0
1
2
3
10
0.1
1
DRAIN-CURRENT : I
D
[A]
10
GATE-SOURCE VOLTAGE : V
GS
[V]
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current (II)
1000
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(
on
)[mW]
V
GS
= 10V
Pulsed
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(
on
)[mW]
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current (III)
1000
V
GS
= 4.5V
Pulsed
T
a
= 125°C
T
a
= 75°C
T
a
= 25°C
T
a
=
-
25°C
100
T
a
= 125°C
T
a
= 75°C
T
a
= 25°C
T
a
=
-
25°C
100
10
0.1
1
DRAIN-CURRENT : I
D
[A]
10
10
0.1
1
DRAIN-CURRENT : I
D
[A]
10
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2011.04 - Rev.A
MP6K12
Data Sheet
Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current (IV)
1000
V
GS
= 4.0V
Pulsed
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(
on
)[mW]
FORWARD TRANSFER ADMITTANCE : |Yfs| [S]
10
Fig.8 Forward Transfer Admittance vs. Drain Current
V
DS
= 10V
Pulsed
100
T
a
= 125°C
T
a
= 75°C
T
a
= 25°C
T
a
=
-
25°C
1
T
a
= 125°C
T
a
= 75°C
T
a
= 25°C
T
a
=
-
25°C
10
0.1
1
DRAIN-CURRENT : I
D
[A]
10
0.1
0.01
0.1
1
10
DRAIN-CURRENT : I
D
[A]
Fig.9 Reverse Drain Current vs. Sourse-Drain Voltage
10
V
GS
=0V
Pulsed
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(
ON
)[mW]
80
100
Fig.10 Static Drain-Source On-State
Resistance vs. Gate Source Voltage
T
a
=25°C
Pulsed
I
D
= 2.5A
SOURCE CURRENT : Is [A]
1
I
D
= 5.0A
60
0.1
T
a
= 125°C
T
a
= 75°C
T
a
= 25°C
T
a
=
-
25°C
40
20
0.01
0
0.5
1
1.5
SOURCE-DRAIN VOLTAGE : V
SD
[V]
0
0
5
GATE-SOURCE VOLTAGE : V
GS
[V]
10
Fig.11 Switching Characteristics
1000
t
d(off)
t
f
SWITCHING TIME : t [ns]
T
a
=25°C
V
DD
=15V
V
GS
=10V
R
G
=10Ω
Pulsed
10
Fig.12 Dynamic Input Characteristics
GATE-SOURCE VOLTAGE : V
GS
[V]
8
100
6
t
d(on)
10
t
r
4
T
a
=25°C
V
DD
= 15V
I
D
= 5.0A
R
G
=10Ω
Pulsed
0
2
4
6
8
10
2
1
0.01
0.1
1
10
0
DRAIN-CURRENT : I
D
[A]
TOTAL GATE CHARGE : Qg [nC]
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4/6
2011.04 - Rev.A
MP6K12
Fig.13 Typical Capacitance
vs. Drain-Source Voltage
Data Sheet
Fig.14 Maximum Safe Operating Area
100
1000
C
iss
Operation in this area is limited by R
DS(ON)
(V
GS
=10V)
10
DRAIN CURRENT : I
D
(A)
CAPACITANCE : C [pF]
P
W
=100us
100
C
rss
C
oss
T
a
=25°C
f=1MHz
V
GS
=0V
10
0.01
0.1
1
10
100
1
P
W
= 1ms
P
W
=10ms
0.1
Ta=25°C
Single Pulse : 1Unit
Mounted on a ceramic board.
(30mm
×
30mm
×
0.8mm)
0.01
0.1
1
10
100
DC operation
DRAIN-SOURCE VOLTAGE : V
DS
[V]
Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width
10
Ta=25°C
Single Pulse : 1Unit
1
DRAIN-SOURCE VOLTAGE : V
DS
[V]
NORMARIZED TRANSIENT THERMAL
RESISTANCE : r (t)
0.1
0.01
Mounted on a ceramic board.
(30mm
×
30mm
×
0.8mm)
Rth
(ch-a)
=89.3°C/W
Rth
(ch-a)
(t)=r(t)×Rth
(ch-a)
0.01
0.1
1
10
100
1000
0.001
0.0001 0.001
PULSE WIDTH : Pw(s)
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5/6
2011.04 - Rev.A
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