Metal may be exposed on the top or bottom of this product. This will not affect any quality, reliability or electrical spec.
SG-8002CA
#4
#3
#3
1.4
#4
5.0
±0.2
2.6
E 125.000
PHC935C
#1
Pin map
Pin
Connection
1
OE or
ST
2
GND
3
OUT
4
V
CC
4.2
5.08
0 Min.
(0.75)
3.8
(0.75)
5.08
7.0
±0.2
#2
+0.1
-0.15
#2
5.08
#1
5.08
36
1.4
http://www.epsontoyocom.co.jp
2.0
Crystal oscillator
SG-8002 Series Specifications
Item
Page
Model
Current
Consump
tion
Supply
Voltage
4.5 V to 5.5 V
15 pF
Output load condition
Output rise time
Output fall time
3.0 ns Max.
(20 % V
CC
to 80 % V
CC
,L_CMOS=Max.)
3.0 ns Max.
(20 % V
CC
to 80 % V
CC
,
L_CMOS=Max.)
2.0 ns Max.
(0.8 V to 2.0 V,L_CMOS or L_TTL=Max.)
4.0 ns Max.
(0.4 V to 2.4 V,L_CMOS or L_TTL=Max.)
3.0 ns Max.
(20 % V
CC
to 80 % V
CC
,L_CMOS≤25)
4.0 ns Max.
(20 % V
CC
to 80 % V
CC
,L_CMOS=Max.)
3.0 ns Max.
(20 % V
CC
to 80 % V
CC
,L_CMOS≤15)
4.0 ns Max.
(20 % V
CC
to 80 % V
CC
,L_CMOS=Max.)
2.0 ns Max.
(0.8 V to 2.0 V,L_CMOS or L_TTL=Max.)
4.0 ns Max.
(0.4 V to 2.4 V,L_CMOS or L_TTL=Max.)
3.0 ns Max.
(20 % V
CC
to 80 % V
CC
,L_CMOS≤25)
4.0 ns Max.
(20 % V
CC
to 80 % V
CC
,L_CMOS=Max.)
3.0 ns Max.
(20 % V
CC
to 80 % V
CC
,L_CMOS≤15)
4.0 ns Max.
(20 % V
CC
to 80 % V
CC
,L_CMOS=Max.)
2.0 ns Max.
(0.8 V to 2.0 V,L_CMOS≤25)
4.0 ns Max.
(0.4 V to 2.4 V,L_CMOS or L_TTL=Max.)
3.0 ns Max.
(20 % V
CC
to 80 % V
CC
,L_CMOS≤25)
4.0 ns Max.
(20 % V
CC
to 80 % V
CC
,L_CMOS=Max.)
3.0 ns Max.
(20 % V
CC
to 80 % V
CC
,L_CMOS≤15)
4.0 ns Max.
(20 % V
CC
to 80 % V
CC
,L_CMOS=Max.)
2.0 ns Max.
(0.8 V to 2.0 V,L_TTL=Max.)
4.0 ns Max.
(0.4 V to 2.4 V,L_TTL=Max.)
Symmetry
Function
PH
35 mA
35
SG-8002LB
(SOJ 4-pin)
SH
SC
Max.
40 % to 60 %(50 % V
CC
, L_CMOS=15 pF,
f
0
≤80
MHz/-40 °C to+85 °C)
45 % to 55 %(50 % V
CC
, L_CMOS=15 pF, V
CC
=3.0 V to 3.6 V,
f
0
≤40
MHz)
40 % to 60 %(50 % V
CC
, L_CMOS=15 pF, V
CC
=3.0 V to 3.6 V,
f
0
≤125
MHz)
↑
(50 % V
CC
, L_CMOS=15 pF, V
CC
=2.7 V to 3.6 V,
f
0
≤66.7
MHz)
45 % to 55 %(1.4 V, L_TTL=5 TTL+15 pF,
f
0
≤66.7
MHz/-20 °C to +70 °C)
↑
(1.4 V, L_TTL=5 TTL+15 pF,
f
0
≤40.0
MHz/-40 °C to +85 °C)
40 % to 60 %(1.4 V, L_TTL=5 TTL+15 pF,
f
0
≤125
MHz/-20 °C to +70 °C)
↑
↑
(1.4 V, L_CMOS=25 pF,
f
0
≤66.7
MHz/-20 °C to +70 °C)
(1.4 V, L_CMOS=15 pF,
f
0
≤55.0
MHz/-40 °C to +85 °C)
OE
ST
OE
ST
OE
ST
OE
ST
OE
ST
OE
ST
OE
ST
OE
ST
OE
ST
OE
ST
OE
ST
OE
ST
OE
PC
28 mA
Max.
3.0 V to 3.6 V
15 pF
(2.7 V to 3.6 V)
5 TTL+15 pF (
f
0
≤125
MHz/-20 °C to+70 °C)
25 pF (
f
0
≤66.7
MHz/-20 °C to+70 °C)
5 TTL+15 pF (
f
0
≤40
MHz/-40 °C to +85 °C)
15 pF(
f
0
≤55
MHz/-40 °C to +85 °C)
SG-8002CA
(SON)
SG-8002JA
(SOJ 4-pin)
SG-8002DB
(DIP 14-pin)
SG-8002DC
(DIP 8-pin)
PT
ST
45 mA
PH
SH
PC
28 mA 3.0 V to 3.6 V
SC
PT
ST
45 mA
4.5 V to 5.5 V
Max.
Max.
36
37
38
4.5 V to 5.5 V
25 pF
50 pF
15 pF
25 pF
15 pF
(
f
0
≤125
MHz/-20 °C to+70 °C)
(
f
0
≤66.7
MHz/-20 °C to+70 °C)
(
f
0
≤55
MHz/-40 °C to+85 °C)
(
f
0
≤40
MHz/-40 °C to+85 °C)
(
f
0
≤66.7
MHz/2.7 to 3.6 V)
45 % to 55 %(50 % V
CC
, L_CMOS=25 pF,
f
0
≤66.7
MHz/-20 °C to +70 °C)
↑
(50 % V
CC
, L_MOS=25 pF,
f
0
≤40.0
MHz/-40 °C to +85 °C)
40 % to 60 %(50 % V
CC
, L_CMOS=25 pF,
f
0
≤125
MHz/-20 °C to +70 °C)
↑
(50 % V
CC
, L_CMOS=50 pF,
f
0
≤66.7
MHz/-20 °C to+70 °C)
↑
(50 % V
CC
, L_CMOS=15 pF,
f
0
≤55.0
MHz/-40 °C to +85 °C)
15 pF
(2.7 V to 3.6 V)
30 pF
(
f
0
≤125
MHz/3.0 to 3.6 V)
(
f
0
≤40
MHz/3.0 to 3.6 V)
40 % to 60 %(50 % V
CC
, L_CMOS=15 pF, V
CC
=3.0 V to 3.6 V,
f
0
≤125
MHz)
↑
(50 % V
CC
, L_CMOS=15 pF, V
CC
=2.7 V to 3.6 V,
f
0
≤66.7
MHz)
45 % to 55 %(1.4 V,L_TTL=5 TTL+15 pF,
f
0
≤66.7
MHz/-20 °C to+70 °C)
40 % to 60 %(1.4 V,L_TTL=5 TTL+15 pF,
f
0
≤90.0
MHz/-20 °C to+70 °C)
↑
(1.4 V,L_CMOS=25 pF,
f
0
≤66.7
MHz/-20 °C to +70 °C)
↑
(1.4 V,L_CMOS=15 pF,
f
0
≤125
MHz/-20 °C to +70 °C)
45 % to 55 %(50 % V
CC
,
L_CMOS=25 pF,
f
0
≤66.7
MHz/-20 °C to +70 °C)
40 % to 60 %(50 % V
CC
, L_CMOS=15 pF,
f
0
≤125
MHz/-20 °C to +70 °C)
↑
(50 % V
CC
, L_CMOS=25 pF,
f
0
≤90
MHz/-20 °C to +70 °C)
↑
(50 % V
CC
, L_CMOS=50 pF,
f
0
≤50
MHz/-20 °C to +70 °C)
45 % to 55 %(50 % V
CC
, L_CMOS=30 pF, V
CC
=3.0 V to 3.6 V,
f
0
≤40
MHz)
40 % to 60 %(50 % V
CC
, L_CMOS=15 pF, V
CC
=3.0 V to 3.6 V,
f
0
≤125
MHz)
↑
(50 % V
CC
, L_CMOS=15 pF, V
CC
=2.7 V to 3.6 V,
f
0
≤66.7
MHz)
45 % to 55 %(1.4 V, L_TTL=5 TTL+15 pF,
f
0
≤66.7
MHz/-20 °C to+70 °C)
40 % to 60 %(1.4 V, L_TTL=5 TTL+15 pF,
f
0
≤90
MHz/-20 °C to +70 °C)
↑
(1.4 V, L_CMOS=25 pF,
f
0
≤66.7
MHz/-20 °C to +70 °C)
↑
↑
(1.4 V, L_CMOS=15 pF,
f
0
≤125
MHz/-20 °C to +70 °C)
(1.4 V, L_CMOS=15 pF,
f
0
≤40
MHz/-40 °C to +85 °C)
45 % to 55 %(50 % V
CC
, L_CMOS=30 pF, V
CC
=3.0 V to 3.6 V,
f
0
≤40
MHz)
5TTL + 15 pF (
f
0
≤90
MHz/-20 to+70 °C)
15 pF (
f
0
≤125
MHz/-20 °C to +70 °C)
25 pF (
f
0
≤66.7
MHz/-20 °C to+70 °C)
(
f
0
≤125
MHz/-20 °C to+70 °C)
(
f
0
≤90
MHz/-20 °C to+70 °C)
(
f
0
≤66.7
MHz/-20 °C to+70 °C)
(
f
0
≤66.7
MHz/2.7 to 3.6 V)
37
SG-8002JC
(SOJ 4-pin)
PH
SH
PC
SC
PT
ST
Max.
15 pF
25 pF
50 pF
15 pF
28 mA
Max.
3.0 V to 3.6 V
15 pF (
f
0
≤125
MHz/3.0 to 3.6 V)
(2.7 V to 3.6 V)
30 pF
(
f
0
≤40
MHz/3.0 to3.6 V)
15 pF (
f
0
≤125
MHz/-20 °C to +70 °C )
25 pF (
f
0
≤66.7
MHz/-20 °C to+70 °C)
5TTL + 15 pF (
f
0
≤
90 MHz/-20 °C to +70 °C)
15 pF
(
f
0
≤40
MHz/-40 °C to +85 °C)
36
SG-8002JF
(SOJ 4-pin)
45 mA
PH
Max.
4.5 V to 5.5 V
15 pF
25 pF
50 pF
15 pF
(
f
0
≤125
MHz/-20 °C to+70 °C )
(
f
0
≤90
MHz/-20 °C to+70 °C)
(
f
0
≤50
MHz/-20 °C to+70 °C)
(
f
0
≤40
MHz/-40 °C to+85 °C)
45 % to 55 %(50 % V
CC
, L_CMOS=25 pF,
f
0
≤66.7
MHz/-20 °C to +70 °C)
40 % to 60 %(50 % V
CC
, L_CMOS=25 pF,
f
0
≤90.0
MHz/-20 °C to +70 °C)
↑
↑
↑
(50 % V
CC
, L_CMOS=50 pF,
f
0
≤50.0
MHz/-20 °C to+70 °C)
(50 % V
CC
, L_CMOS=15 pF,
f
0
≤125
MHz/-20 °C to+70 °C)
(50 % V
CC
, L_CMOS=15 pF,
f
0
≤40
MHz/-40 °C to+85 °C)
SH
PC
SC
PT
ST
40 mA
34
SG-8002CE
(SON)
Max.
4.5 V to 5.5 V
28 mA
Max.
3.0 V to 3.6 V
15 pF(
f
0
≤125
MHz/3.0 to 3.6 V)
(2.7 V to 3.6 V)
30 pF(
f
0
≤40
MHz/3.0 to 3.6 V)
15 pF(
f
0
≤66.7
MHz/2.7 to 3.6 V)
45 % to 55 %(50 % V
CC
, CL=30 pF, V
CC
=3.0 V to 3.6 V,
f
0
≤40
MHz)
40 % to 60 %(50 % V
CC
, CL=15 pF, V
CC
=3.0 V to 3.6 V,
f
0
≤125
MHz)
↑
(50 % V
CC
, CL=15 pF, V
CC
=2.7 V to 3.6 V,
f
0
≤66.7
MHz)
45 % to 55 %(1.4 V, L_TTL=5 TTL+15 pF,
f
0
≤66.7
MHz/-20 °C to +70 °C)
↑
(1.4 V, L_TTL=5 TTL+15 pF,
f
0
≤27.0
MHz/-40 °C to + 85 °C)
40 % to 60 %(1.4 V, L_TTL=5 TTL+15 pF,
f
0
≤125
MHz/-20 °C to +70 °C)
5 TTL+15 pF (
f
0
≤125
MHz/-20 °C to + 70 °C)
5 TTL+15 pF (
f
0
≤27
MHz/-40 °C to +85 °C )
15 pF
25 pF
25 pF
(
f
0
≤125
MHz/-20 °C to +70 °C )
(
f
0
≤100
MHz/-20 °C to+70 °C )
(
f
0
≤27
MHz/-40 °C to +85 °C )
PH
SH
45 % to 55 %(50 % V
CC
, L_CMOS=25 pF,
f
0
≤66.7
MHz/-20 °C to +70 °C)
3.0 ns Max.
↑
(50 % V
CC
, L_CMOS=25 pF,
f
0
≤27.0
MHz/-40 °C to + 85 °C)
(20 % V
CC
to 80 % V
CC
,L_CMOS=Max.)
40 % to 60 %(50 % V
CC
, L_CMOS=15 pF,
f
0
≤125
MHz/-20 °C to +70 °C)
3.0 ns Max.
(20 % V
CC
to 80 % V
CC
,
L_CMOS=Max.)
45 % to 55 %(50 % V
CC
, L_CMOS=15 pF, V
CC
=3.0 V to 3.6 V,
PC
28 mA
SC
Max.
3.0 V to 3.6 V
15 pF (
f
0
≤66.7
MHz/2.7 to 3.6 V)
(2.7 V to 3.6 V)
15 pF (
f
0
≤125
MHz/3.0 to 3.6 V)
ST
f
0
≤40
MHz)
OE
40 % to 60 %(50 % V
CC
, L_CMOS=15 pF, V
CC
=3.0 V to 3.6 V,
f
0
≤125
MHz)
↑
(50 % V
CC
, L_CMOS=15 pF, V
CC
=2.7 V to 3.6 V,
f
0
≤66.7
MHz)
ST
►
TABLE OF FREQUENCY RANGE
Model
PT/ ST
PH/ SH
PC/SC
PH/ SH
SG-8002LB
PC/ SC
PT/ ST
PH/ SH
PC
SC
SG-8002CA
SG-8002JA
SG-8002DB
SG-8002DC
PT/ ST
PH/ SH
PC/ SC
PT/ ST
SG-8002JC
PH/ SH
PC/ SC
-6
Supply voltage
4.5 V to 5.5 V
3.0 V to 3.6 V
(2.7 V to 3.6 V)
5.0 V±0.5 V
3.3 V±0.3 V
4.5 V to 5.5 V
3.0 V to 3.6 V
(2.7 V to 3.6 V)
4.5 V to 5.5 V
3.0 V to 3.6 V
(2.7 V to 3.6 V)
4.5 V to 5.5 V
3.0 V to 3.6 V
(2.7 V to 3.6 V)
-6
Frequency tolerance
OperatingTemperature
B,C
M
B,C,M
B,C
M,L
B,C,M,L
B,C
M
B,C,M
B,C
M
B,C,M
B
C
B
C
Frequency
1 MHz
1.0 MHz
1.0 MHz
1.0 MHz
*2.7
V to 3.6 V : 1.0 MHz to 66.7 MHz
1.0 MHz
1.0 MHz
1.0 MHz
*2.7
V to 3.6 V : 1.0 MHz to 66.7 MHz
1.0 MHz
1.0 MHz
1.0 MHz
*2.7
V to 3.6 V : 1.0 MHz to 66.7 MHz
1.0 MHz
1.0 MHz
1.0 MHz
*2.7
V to 3.6 V : 1.0 MHz to 66.7 MHz
1.0 MHz
1.0 MHz
*2.7
V to 3.6 V : 1.0 MHz to 66.7 MHz
-6
-6
50 MHz
27 MHz
100 MHz
125 MHz
125 MHz
125 MHz
SG-8002CE
80 MHz
27 MHz
125 MHz
125 MHz
40 MHz
125 MHz
125 MHz
55 MHz
125 MHz
125 MHz
125 MHz
SG-8002JF
Frequency tolerance : B:±50×10 (-20 °C to +70 °C ), C:±100×10 (-20 °C to +70 °C ), M:±100×10 (-40 °C to +85 °C ), L:±50×10 (-40 °C to +85 °C )
http://www.epsontoyocom.co.jp
39
Crystal oscillator
SG-8002 series and HG-8002 series
■
PLL-PLL connection
Because we use a PLL technology, there are a few cases that the jitter value will increase when SG-8002 is connected to another
PLL-oscillator.
In our experience, we are unable to recommend these products for the applications such as telecom carrier use or analog video
clock use. Please be careful checking in advance for these application (Jitter specification is Max.250 ps/CL=15 pF)
■
Remarks on noise management for power supply line
We do not recommend inserting filters or other devices in the power supply line as the counter measure of EMI noise reduction.
This device insertion might cause high-frequency impedance high in the power supply line and it affects oscillator stable drive.
When this measure is required, please evaluate circuitry and device behavior in the circuit and verify that it will not affect oscillation.
Start up time (0 % V
CC
to 90 % V
CC
) of power source should be more than
150
µs.
■
Jitter Specifications
Model
PT
/
PH
ST
/
SH
SC
/
PC
Supply
Voltage
5.0 V
±0.5
V
3.3 V
±0.3
V
Jitter Item
Cycle to cycle
Peak to peak
Cycle to cycle
Peak to peak
Specifications
150
ps Max.
200 ps Max.
200 ps Max.
250 ps Max.
200 ps Max.
250 ps Max.
Remarks
33 MHz
≤
f
0
≤
125
MHz, L_CMOS=15 pF
1.0
MHz
≤
f
0
< 33 MHz, L_CMOS=15 pF
33 MHz
≤
f
0
≤
125
MHz, L_CMOS=15 pF
1.0
MHz
≤
f
0
< 33 MHz, L_CMOS=15 pF
1.0
MHz
≤
f
0
≤
125
MHz, L_CMOS=15 pF
1.0
MHz
≤
f
0
≤
125
MHz, L_CMOS=15 pF
■
SG-8002 series Characteristics chart
50
40
I
CC
(mA)
30
20
10
0
50
40
I
_dis
(mA)
30
20
10
0
50
40
I
_std
(µA)
30
20
10
2.5
3.0 3.5 4.0 4.5 5.0
V
CC
(V)
5.5 6.0
20
40 60 80
100 120 140
Frequency(MHz)
Stand-by Current
20
40 60 80
100 120 140
Frequency(MHz)
Current consumption
(V
CC
=5.0V)
60
Symmetry (%)
55
50
45
40
0
60
Symmetry (%)
55
50
15
pF
50 pF
Symmetry 5.0 V CMOS Level
25 pF
3.0
Output Rise time (CMOS Level)
4.5 V
5.0 V
5.5 V
2.5
Rise time (ns)
15
pF
3.0 V
3.3 V
3.6 V
2.7 V
2.0
1.5
20
40 60 80
100 120 140
Frequency(MHz)
1.0
10
15
20 25 30 35 40 45
50 55
Disable Current
(V
CC
=5.0V)
Symmetry 3.3 V CMOS Level
3.0
30 pF
Load capacitance (pF)
Output Fall time (CMOS Level)
3.0 V
3.3 V
3.6 V
4.5 V
5.0 V
5.5 V
Fall Time (ns)
2.5
45
40
0
20
40 60 80
100 120 140
Frequency(MHz)
2.0
2.7 V
1.5
60
Symmetry (%)
55
50
45
40
0
Symmetry 5.0V TTL Level
1.0
10 15
20 25 30 35 40 45
50 55
Load capacitance (pF)
25 pF
15
pF
2.0
Rise Time (ns)
1.5
1.0
Output Rise time (TTL Level)
4.5 V
5.0 V
5.5 V
20
40 60 80
100 120 140
Frequency(MHz)
Additional Value (mA)
Output load vs. Additional Current consumption
20
V
CC
=5.0 V
18
25 pF
16
14
50 pF
12
15
pF
10
30 pF
8
6
4
2
Voltage coefficient [
V
CC
vs I
OP
,I
OE
]
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
2.5
3.0
I
OP
(Va)=Times(Va)×I
OP
(5.0V)
I
OE
(Va)=Times(Va)×I
OE
(5.0V)
10
2.0
Fall Time (ns)
15
20
25
Load capacitance (pF)
Output Fall time (TTL Level)
30
Times
1.5
4.5 V
5.0 V
5.5 V
1.0
0
20
40 60 80
100 120 140
Frequency(MHz)
3.5
4.0
4.5
5.0
5.5
6.0
V
CC
(V)
10
15
20
25
Load capacitance (pF)
30
40
http://www.epsontoyocom.co.jp
“3D STRATEGY” EPSON TOYOCOM
In order to meet customer needs in a rapidly advancing digital,
broadband and ubiquitous society, we are committed to offering
products that are one step ahead of the market and a rank above
the rest in quality. To achieve our goals, we follow a “3D (three
device) strategy” designed to drive both horizontal and vertical
growth. We will to grow our three device categories of “Timing
Devices”, ”Sensing Devices” and “Optical Devices”, and expand
vertical growth through a combination of products from these
categories.
Quartz devices have become crucial in the network environment
where products are increasingly intended for broadband,
ubiquitous applications and where various types of terminals can
transfer information almost immediately via LAN and WAN on a
global scale. Epson Toyocom Corporation addresses every single
aspect within a network environment. The new corporation offers
“Digital Convergence” solutions to problems arising with products
for consumer use, such as, core network systems and automotive
systems.
PROMOTION OF ENVIRONMENTAL MANAGEMENT SYSTEM
CONFORMING TO INTERNATIONAL STANDARDS
At Epson Toyocom, all environmental initiatives operate under the Plan-Do-Check-Action(PDCA) cycle designed to achieve continuous improvements.
The environmental management system (EMS) operates under the ISO 14001 environmental management standard.
All of our major manufacturing and non-manufacturing sites, in Japan and overseas, completed the acquisition of ISO 14001 certification.
In the future, new group companies will be expected to acquire the certification around the third year of operations.
ISO 14000 is an international standard for environmental
management that was established by the International
Standards Organization in 1996 against the background
of growing concern regarding global warming, destruction
of the ozone layer, and global deforestation.
WORKING FOR HIGH QUALITY
Epson Toyocom quickly began working to acquire company-wide ISO 9000 series certification, and has acquired ISO 9001 or ISO 9002 certification for
all targeted products manufactured in Japanese and overseas plants.
Epson Toyocom has acquired QS-9000 certification, which is of a higher level.
Also, TS 16949 certification, which is also of a higher level, has been acquired.
QS-9000 is an enhanced standard for quality
assurance systems formulated by leading
U.S.automobile manufacturers based on
the international ISO 9000 series.
ISO/TS 16949 is a global standard based on
QS-9000, a severe standard corresponding to
the requirements from the automobile industry.
Notice
●This
material is subject to change without notice.
●Any
part of this material may not be reproduced or duplicated in any form or any means without the written permission of Epson Toyocom.
●The
information, applied circuitry, programming, usage, etc., written in this material is intended for reference only. Epson Toyocom does not assume
any liability for the occurrence of infringing on any patent or copyright of a third party. This material does not authorize the licensing on for any patent
or intellectual copyrights.
●Any
product described in this material may contain technology or the subject relating to strategic products under the control of the Foreign
Exchange and Foreign Trade Law of Japan and may require an export license from the Ministry of International Trade and Industry or other
approval from another government agency.
●
You are requested not to use the products (and any technical information furnished, if any) for the development and/or manufacture of weapon of
mass destruction or for other military purposes. You are also requested that you would not make the products available to any third party who may
use the products for such prohibited purposes.
●These
products are intended for general use in electronic equipment. When using them in specific applications that require extremely high reliability,
such as the applications stated below, you must obtain permission from Epson Toyocom in advance.
/ Space equipment (artificial satellites, rockets, etc.) / Transportation vehicles and related (automobiles, aircraft, trains, vessels, etc.)
/ Medical instruments to sustain life / Submarine transmitters / Power stations and related / Fire work equipment and security equipment
/ traffic control equipment / and others requiring equivalent reliability.
●
In this new crystal master for Epson Toyocom, product codes and markings will remain as previously identified prior to the merger.
Due to the on-going strategy of gradual unification of part numbers, please review product codes and markings, as they will change during the
course of the coming months.
We apologize for the inconvenience, but we will eventually have a unified part numbering system for Epson Toyocom that will be user friendly.
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