1.2V Drive Pch MOSFET
RZB002P02
Structure
Silicon P-channel MOSFET
Dimensions
(Unit : mm)
VMN3
0.22
(3)
Features
1) High speed switing.
2) Ultra small package(VMN3).
3) Ultra low voltage drive(1.2V drive).
0.1
1.0
0.8
0.1
0.16
(1)
(2)
0.17
0.35
0.6
0.37
Application
Switching
Abbreviated
symbol : YK
Packaging specifications
Package
Type
Code
Basic ordering unit (pieces)
RZB002P02
Taping
T2L
8000
Inner circuit
(3)
Absolute maximum ratings
(Ta = 25C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body Diode)
Power dissipation
Channel temperature
Range of storage temperature
*1 Pw10s, Duty cycle1%
*2 Each terminal mounted on a recommended land.
Symbol
V
DSS
V
GSS
Limits
20
10
200
Unit
V
V
mA
mA
mA
mA
mW
C
C
(1)
(2)
(1) GATE
(2) SOURCE
(3) DRAIN
Continuous
Pulsed
Continuous
Pulsed
I
D
I
DP
I
S
I
SP
P
D
Tch
Tstg
*1
800
100
800
150
150
55
to +150
*1
*2
Thermal resistance
Parameter
Channel to Ambient
* Each terminal mounted on a recommended land.
Symbol
Rth (ch-a)
*
Limits
833
Unit
C
/ W
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©2010 ROHM Co., Ltd. All rights reserved.
1/5
2010.11 - Rev.A
RZB002P02
Electrical characteristics
(Ta = 25C)
Parameter
Gate-source leakage
Zero gate voltage drain current
Gate threshold voltage
Symbol
I
GSS
I
DSS
V
GS (th)
Min.
-
20
-
0.3
-
Static drain-source on-state
resistance
-
*
R
DS (on)
-
-
-
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
*Pulsed
Typ.
-
-
-
-
0.8
1.0
1.3
1.6
2.4
-
115
10
6
6
4
17
17
1.4
0.3
0.3
Max.
10
-
1
1.0
1.2
1.5
2.2
3.5
9.6
-
-
-
-
-
-
-
-
-
-
-
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Unit
A
V
A
V
Conditions
V
GS
=10V, V
DS
=0V
I
D
=1mA, V
GS
=0V
V
DS
=20V, V
GS
=0V
V
DS
=10V, I
D
=100A
I
D
=200mA, V
GS
=4.5V
I
D
=100mA, V
GS
=2.5V
I
D
=100mA, V
GS
=1.8V
I
D
=40mA, V
GS
=1.5V
I
D
=10mA, V
GS
=1.2V
I
D
=200mA, V
DS
=10V
V
DS
=10V
V
GS
=0V
f=1MHz
I
D
=100mA, V
DD
10V
V
GS
=4.5V
R
L
=100
R
G
=10
I
D
=200mA, V
DD
V
GS
=4.5V
10V
Data Sheet
Drain-source breakdown voltage V
(BR)DSS
l Y
fs
l *
C
iss
C
oss
C
rss
t
d(on)
*
t
r
*
t
d(off)
*
t
f
*
Q
g
*
Q
gs
*
Q
gd
*
0.2
-
-
-
-
-
-
-
-
-
-
Body
diode characteristics
(Source-Drain) (Ta = 25C)
Parameter
Forward Voltage
*Pulsed
Symbol
V
SD
*
Min.
-
Typ.
-
Max.
1.2
Unit
V
Conditions
I
s
=200mA, V
GS
=0V
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©2010 ROHM Co., Ltd. All rights reserved.
2/5
2010.11 - Rev.A
RZB002P02
0.2
1
Data Sheet
0.2
DRAIN CURRENT : -I
D
[A]
DRAIN CURRENT : -I
D
[A]
0.15
0.15
0.1
V
GS
= -1.5V
0.05
V
GS
= -2.5V
V
GS
= -2.0V
V
GS
= -1.8V
V
GS
= -2.5V
V
GS
= -1.8V
V
GS
= -1.5V
DRAIN CURRENT : -I
D
[A]
V
GS
= -10.0V
V
GS
= -4.5V
V
GS
= -3.2V
Ta=25°C
Pulsed
V
GS
= -4.5V
Ta=25°C
Pulsed
0.1
V
DS
= -10V
Pulsed
0.1
V
GS
= -1.2V
0.01
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= - 25°C
V
GS
= -1.2V
0.05
0.001
V
GS
= -1.0V
0
V
GS
= -1.0V
0
0
0.2
0.4
0.6
0.8
1
0.0001
0
2
4
6
8
10
0
0.5
1
1.5
DRAIN-SOURCE VOLTAGE : -V
DS
[V]
Fig.1 Typical output characteristics(
Ⅰ)
DRAIN-SOURCE VOLTAGE : -V
DS
[V]
Fig.2 Typical output characteristics(
Ⅱ)
GATE-SOURCE VOLTAGE : -V
GS
[V]
Fig.3 Typical Transfer Characteristics
10000
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(ON)[m]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(ON)[m]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(ON)[m]
Ta=25°C
Pulsed
10000
10000
V
GS
= -4.5V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
V
GS
= -2.5V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
1000
V
GS
= -1.2V
V
GS
= -1.5V
V
GS
= -1.8V
V
GS
= -2.5V
V
GS
= -4.5V
100
0.001
0.01
0.1
1
1000
1000
100
0.001
0.01
0.1
1
100
0.001
0.01
0.1
1
DRAIN-CURRENT : -I
D
[A]
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current(
Ⅰ)
DRAIN-CURRENT : -I
D
[A]
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current(
Ⅱ)
DRAIN-CURRENT : -I
D
[A]
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current(
Ⅲ)
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(ON)[m]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(ON)[m]
10000
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(ON)[m]
10000
V
GS
= -1.8V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
V
GS
= -1.5V
Pulsed
10000
V
GS
= -1.2V
Pulsed
1000
1000
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
1000
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
100
0.001
0.01
0.1
1
100
0.001
0.01
DRAIN-CURRENT : -I
D
[A]
Fig.8 Static Drain-Source On-State
Resistance vs. Drain Current(
Ⅴ)
0.1
100
0.001
0.01
DRAIN-CURRENT : -I
D
[A]
Fig.9 Static Drain-Source On-State
Resistance vs. Drain Current(
Ⅵ)
0.1
DRAIN-CURRENT : -I
D
[A]
Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current(
Ⅳ)
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©2010 ROHM Co., Ltd. All rights reserved.
3/5
2010.11 - Rev.A
RZB002P02
Data Sheet
FORWARD TRANSFER ADMITTANCE : |Yfs| [S]
REVERSE DRAIN CURRENT : -Is [A]
1.0
V
DS
= -10V
Pulsed
1
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(ON)[]
V
GS
=0V
Pulsed
5
Ta=25°C
Pulsed
I
D
= -0.2A
3
I
D
= -0.01A
2
4
Ta=-25°C
Ta=25°C
Ta=75°C
Ta=125°
0.1
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
1
0.1
0.01
0.1
DRAIN-CURRENT : -I
D
[A]
Fig.10 Forward Transfer Admittance
vs. Drain Current
1
0.01
0
0.5
1
1.5
0
0
2
4
6
8
10
SOURCE-DRAIN VOLTAGE : -V
SD
[V]
Fig.11 Reverse Drain Current
vs. Sourse-Drain Voltage
GATE-SOURCE VOLTAGE : -V
GS
[V]
Fig.12 Static Drain-Source On-State
Resistance vs. Gate Source Voltage
1000
t
d
(off
SWITCHING TIME : t [ns]
100
t
GATE-SOURCE VOLTAGE : -V
GS
[V]
Ta=25°C
V
DD
= -10V
V
GS
=-4.5V
R
G
=10
Pulsed
5
1000
Ta=25°C
f=1MHz
V
GS
=0V
100
3
2
10
1
t
1
0.01
t
d
(on
Ta=25°C
V
DD
= -10V
I
D
= -0.2A
R
G
=10Ω
Pulsed
0
0.5
1
1.5
CAPACITANCE : C [pF]
4
Ciss
10
Coss
Crss
1
0.01
0.1
1
10
100
0
0.1
DRAIN-CURRENT : -I
D
[A]
Fig.13 Switching Characteristics
1
TOTAL GATE CHARGE : Qg [nC]
Fig.14 Dynamic Input Characteristics
DRAIN-SOURCE VOLTAGE : -V
DS
[V]
Fig.15 Typical Capacitance
vs. Drain-Source Voltage
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©2010 ROHM Co., Ltd. All rights reserved.
4/5
2010.11 - Rev.A
RZB002P02
Measurement circuits
Data Sheet
Pulse Width
V
GS
I
D
R
L
D.U.T.
V
DS
V
GS
10%
50%
10%
90%
50%
10%
90%
R
G
V
DD
V
DS
t
d(on)
t
on
90%
t
r
t
d(off)
t
off
t
f
Fig.1-1 Switching Time Measurement Circuit
Fig.1-2 Switching Waveforms
V
G
I
D
V
GS
R
L
I
G(Const.)
D.U.T.
V
DD
V
DS
Q
g
V
GS
Q
gs
Q
gd
Charge
Fig.2-1 Gate charge measurement circuit
Fig.2-2 Gate Charge Waveform
Notice
This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD
protection circuit.
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©2010 ROHM Co., Ltd. All rights reserved.
5/5
2010.11 - Rev.A
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