1.2V Drive Nch MOSFET
RUC002N05
Structure
Silicon N-channel MOSFET
Dimensions
(Unit : mm)
SST3
<SOT-23>
Features
1) High speed switing.
2) Small package(SST3).
3)Ultra low voltage drive(1.2V drive).
Abbreviated symbol : RH
Application
Switching
Packaging specifications
Package
Type
Code
Basic ordering unit (pieces)
RUC002N05
Taping
T116
3000
Inner circuit
(3)
∗1
∗2
Absolute maximum ratings
(Ta = 25C)
Symbol
Parameter
Drain-source voltage
V
DSS
Gate-source voltage
V
GSS
Continuous
I
D
Drain current
Pulsed
I
DP
*1
Continuous
I
S
Source current
(Body Diode)
Pulsed
I
SP
*1
Power dissipation
P
D
*2
Channel temperature
Range of storage temperature
*1 Pw10s, Duty cycle1%
*2 Each terminal mounted on a recommended land.
(2)
(1)
∗1
BODY DIODE
∗2
ESD PROTECTION DIODE
Limits
50
8
200
800
150
800
200
150
55
to +150
Unit
V
V
mA
mA
mA
mA
mW
C
C
(1) SOURCE
(2) GATE
(3) DRAIN
Tch
Tstg
Thermal resistance
Parameter
Channel to ambient
* Each terminal mounted on a recommended land.
Symbol
Rth (ch-a)
*
Limits
625
Unit
C
/ W
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○
2010 ROHM Co., Ltd. All rights reserved.
1/5
2010.06 - Rev.B
RUC002N05
Electrical characteristics
(Ta = 25C)
Parameter
Gate-source leakage
Zero gate voltage drain current
Gate threshold voltage
Symbol
I
GSS
I
DSS
V
GS (th)
Min.
-
50
-
0.3
-
Static drain-source on-state
resistance
-
*
R
DS (on)
-
-
-
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
*Pulsed
Data Sheet
Typ.
-
-
-
-
1.6
1.7
1.9
2.0
2.4
-
25
6
3
4
6
15
55
Max.
10
-
1
1.0
2.2
2.4
2.7
4.0
7.2
-
-
-
-
-
-
-
-
Unit
A
V
A
V
Conditions
V
GS
=8V, V
DS
=0V
I
D
=1mA, V
GS
=0V
V
DS
=50V, V
GS
=0V
V
DS
=10V, I
D
=1mA
I
D
=200mA, V
GS
=4.5V
I
D
= 200mA, V
GS
=2.5V
Drain-source breakdown voltage V
(BR)DSS
I
D
= 100mA, V
GS
=1.8V
I
D
=40mA, V
GS
=1.5V
I
D
=20mA, V
GS
=1.2V
l Y
fs
l*
C
iss
C
oss
C
rss
t
d(on)
*
t
r
*
t
d(off)
*
t
f
*
0.4
-
-
-
-
-
-
-
S
pF
pF
pF
ns
ns
ns
ns
I
D
=200mA, V
DS
=10V
V
DS
=10V
V
GS
=0V
f=1MHz
I
D
=100mA, V
DD
30V
V
GS
=4.5V
R
L
=300
R
G
=10
Body
diode characteristics
(Source-Drain) (Ta = 25C)
Parameter
Forward voltage
*Pulsed
Symbol
V
SD
*
Min.
-
Typ.
-
Max.
1.2
Unit
V
Conditions
I
s
=200mA, V
GS
=0V
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2010 ROHM Co., Ltd. All rights reserved.
2/5
2010.06 - Rev.B
RUC002N05
Electrical
characteristic curves
0.4
DRAIN CURRENT : I
D
[A]
DRAIN CURRENT : I
D
[A]
V
GS
= 4.5V
V
GS
= 2.5V
V
GS
=1.8V
V
GS
=1.5V
Data Sheet
0.4
DRAIN CURRENT : I
D
[A]
V
GS
= 4.5V
V
GS
= 2.5V
V
GS
=1.8V
V
GS
=1.5V
1
Ta=25°C
Pulsed
V
DS
= 10V
Pulsed
0.3
Ta=25°C
Pulsed
V
GS
= 1.2V
0.3
0.1
0.2
V
GS
= 1.0V
0.2
V
GS
=1.2V
V
GS
=1.0V
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= - 25°C
0.01
0.1
V
GS
= 0.8V
0.1
V
GS
=0.8V
0
0
0
0.2
0.4
0.6
0.8
1
0.001
0
2
4
6
8
10
0
0.5
1
1.5
2
DRAIN-SOURCE VOLTAGE : V
DS
[V]
Fig.1 Typical Output Characteristics(
I )
DRAIN-SOURCE VOLTAGE : V
DS
[V]
Fig.2 Typical Output Characteristics(
II )
GATE-SOURCE VOLTAGE : V
GS
[V]
Fig.3 Typical Transfer Characteristics
STATIC DRAIN-SOURCE ON-STATE
]
RESISTANCE : R
DS
(on)[
STATIC DRAIN-SOURCE ON-STATE
]
RESISTANCE : R
DS
(on)[
Ta= 25°C
Pulsed
STATIC DRAIN-SOURCE ON-STATE
]
RESISTANCE : R
DS
(on)[
100
100
V
GS
= 4.5V
Pulsed
10
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
100
V
GS
= 2.5V
Pulsed
10
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
10
V
GS
=1.2V
V
GS
= 1.5V
V
GS
= 1.8V
V
GS
= 2.5V
V
GS
= 4.5V
1
1
1
0.1
0.01
0.1
DRAIN-CURRENT : I
D
[A]
1
0.1
0.01
0.1
DRAIN-CURRENT : I
D
[A]
1
0.1
0.01
0.1
DRAIN-CURRENT : I
D
[A]
1
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current(
I )
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current(
II )
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current(
III )
STATIC DRAIN-SOURCE ON-STATE
]
RESISTANCE : R
DS
(on)[
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(on)[
]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on)[
]
100
V
GS
= 1.8V
Pulsed
100
100
10
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
V
GS
= 1.5V
Pulsed
10
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
V
GS
= 1.2V
Pulsed
10
1
1
1
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
0.1
0.01
0.1
DRAIN-CURRENT : I
D
[A]
1
0.1
0.01
0.1
DRAIN-CURRENT : I
D
[A]
1
0.1
0.01
0.1
DRAIN-CURRENT : I
D
[A]
1
Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current(
IV )
Fig.8 Static Drain-Source On-State
Resistance vs. Drain Current(
V )
Fig.9 Static Drain-Source On-State
Resistance vs. Drain Current(
VI )
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2010 ROHM Co., Ltd. All rights reserved.
3/5
2010.06 - Rev.B
RUC002N05
FORWARD TRANSFER ADMITTANCE : |Yfs| [S]
Data Sheet
STATIC DRAIN-SOURCE ON-STATE
]
RESISTANCE : R
DS
(ON)[
1
1
10
9
8
7
6
5
4
3
2
1
0
0
5
10
I
D
= 20mA
I
D
=200mA
Ta=25°C
Pulsed
Ta= -25°C
Ta=25°C
Ta=75°C
Ta=125°C
SOURCE CURRENT : I
s
[A]
V
DS
= 10V
Pulsed
V
GS
=0V
Pulsed
0.1
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
0.01
0.1
0.001
0.01
0.1
1
0
0.5
1
1.5
DRAIN-CURRENT : I
D
[A]
Fig.10 Forward Transfer Admittance
vs. Drain Current
SOURCE-DRAIN VOLTAGE : V
SD
[V]
Fig.11 Reverse Drain Current
vs. Sourse-Drain Voltage
GATE-SOURCE VOLTAGE : V
GS
[V]
Fig.12 Static Drain-Source On-State
Resistance vs. Gate Source Voltage
1000
1000
SWITCHING TIME : t [ns]
CAPACITANCE : C [pF]
t
f
100
t
d(off)
Ta=25°C
V
DD
=30V
V
GS
=4.5V
R
G
=10
Pulsed
100
Ta=25°C
f=1MHz
V
GS
=0V
C
iss
10
C
rss
10
t
r
1
C
oss
t
d(on)
1
0.01
0.1
DRAIN-CURRENT : I
D
[A]
Fig.13 Switching Characteristics
1
0.1
0.01
0.1
1
10
100
DRAIN-SOURCE VOLTAGE : V
DS
[V]
Fig.14 Typical Capacitance
vs. Drain-Source Voltage
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○
2010 ROHM Co., Ltd. All rights reserved.
4/5
2010.06 - Rev.B
RUC002N05
Measurement
circuits
Pulse width
V
GS
I
D
R
L
D.U.T.
R
G
V
DD
V
DS
Data Sheet
V
GS
V
DS
50%
10%
10%
90%
t
d(on)
t
on
t
r
90%
50%
10%
90%
t
d(off)
t
off
t
f
Fig.1-1 Switching time measurement circuit
Fig.1-2 Switching waveforms
Notice
This product might cause chip aging and breakdown under the large electrified environment.
Please consider to design ESD protection circuit.
www.rohm.com
c
○
2010 ROHM Co., Ltd. All rights reserved.
5/5
2010.06 - Rev.B
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