US5U3
Transistors
2.5V Drive Nch+SBD MOSFET
US5U3
Structure
Silicon N-channel MOSFET /
Schottky barrier diode
Dimensions
(Unit : mm)
TUMT5
2.0
Features
1) Nch MOSFET and schottky barrier diode
are put in TUMT5 package.
2) High-speed switching, Low On-resistance.
3) Low voltage drive (2.5V drive).
4) Built-in Low V
F
schottky barrier diode.
Abbreviated symbol : U03
Applications
Switching
Package specifications
Package
Type
US5U3
Code
Basic ordering unit (pieces)
Taping
TR
3000
Inner circuit
(5)
(4)
∗2
∗1
(1)
(2)
∗1
ESD protection diode
∗2
Body diode
(3)
Absolute maximum ratings
(Ta=25°C)
<MOSFET>
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Power dissipation
Channel temperature
∗1
Pw≤10µs, Duty cycle≤1%
∗2
Mounted on a ceramic board
(1)Gate
(2)Source
(3)Anode
(4)Cathode
(5)Drain
Continuous
Pulsed
Continuous
Pulsed
Symbol
V
DSS
V
GSS
I
D
I
DP
∗1
I
S
I
SP
∗1
P
D
Tch
∗2
Limits
30
12
±1.5
±6.0
0.6
6.0
0.7
150
Unit
V
V
A
A
A
A
W / ELEMENT
°C
<Di>
Parameter
Repetitive peak reverse voltage
Reverse voltage
Forward current
Forward current surge peak
Power dissipation
Junction temperature
∗1
60Hz 1cycle
∗2
Mounted on ceramic board
Symbol
V
RM
V
R
I
F
I
FSM
P
D
Tj
∗1
∗2
Limits
25
20
0.7
3.0
0.5
150
Unit
V
V
A
A
W / ELEMENT
°C
Rev.B
0.2Max.
1.3
1/3
US5U3
Transistors
<MOSFET and Di>
Parameter
Total power dissipation
Range of storage temperature
∗1
Mounted on a ceramic board
Symbol
P
D
∗1
Tstg
Limits
1.0
−55
to
+150
Unit
W / TOTAL
°C
Electrical characteristics
(Ta=25°C)
<MOSFET>
Parameter
Symbol
Min.
−
30
−
0.5
−
−
−
1.5
−
−
−
−
−
−
−
−
−
−
Typ.
−
−
−
−
170
180
240
−
80
14
12
7
9
15
6
1.6
0.5
0.3
Max.
10
−
1
1.5
240
250
340
−
−
−
−
−
−
−
−
2.2
−
−
Unit
µA
V
µA
V
mΩ
mΩ
mΩ
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Conditions
V
GS
=12V, V
DS
=0V
I
D
= 1mA, V
GS
=0V
V
DS
= 30V, V
GS
=0V
V
DS
= 10V, I
D
= 1mA
I
D
= 1.5A, V
GS
= 4.5V
I
D
= 1.5A, V
GS
= 4V
I
D
= 1.5A, V
GS
= 2.5V
V
DS
= 10V, I
D
= 1.5A
V
DS
= 10V
V
GS
=0V
f=1MHz
V
DD
15V
I
D
= 0.75A
V
GS
= 4.5V
R
L
= 20Ω
R
G
=10Ω
V
DD
15V, V
GS
= 4.5V
I
D
= 1.5A
R
L
= 10Ω, R
G
= 10Ω
I
GSS
Gate-source leakage
Drain-source breakdown voltage
V
(BR) DSS
I
DSS
Zero gate voltage drain current
Gate threshold voltage
V
GS (th)
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source
charge
Gate-drain
charge
∗Pulsed
R
DS (on)
∗
Y
fs
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
Q
g
Q
gs
Q
gd
∗
∗
∗
∗
∗
∗
∗
∗
<Body diode characteristics (Souce-drain)>
Parameter
Symbol Min.
Forward voltage
V
SD
−
Typ.
−
Max.
1.2
Unit
V
Conditions
I
S
= 0.6A, V
GS
=0V
<Di>
Parameter
Forward voltage
Reverse current
Symbol
V
F
I
R
Min.
−
−
Typ.
−
−
Max.
0.49
200
Unit
V
µA
I
F
= 0.7A
V
R
= 20V
Conditions
Rev.B
2/3
US5U3
Transistors
Electrical characteristics curves
1000
Ta=25°C
f=1MHz
V
GS
=0V
1000
Ciss
tf
GATE-SOURCE VOLTAGE : V
GS
(V)
SWITCHING TIME : t (ns)
CAPACITANCE : C (pF)
Ta=25°C
V
DD
=15V
V
GS
=4.5V
R
G
=10Ω
Pulsed
6
Ta=25°C
V
DD
=15V
5
I
D
=1.5A
R
G
=10Ω
Pulsed
100
Crss
Coss
100
td(off)
4
3
2
10
10
td(on)
tr
1
0
1
0.01
0.1
1
10
100
1
0.01
0.1
1
10
0
0.5
1
1.5
2
DRAIN-SOURCE VOLTAGE : V
DS
(V)
DRAIN CURRENT : I
D
(A)
TOTAL GATE CHARGE : Qg (nC)
Fig.1 Typical Capacitance
vs. Drain-Source Voltage
Fig.2 Switching Characteristics
Fig.3 Dynamic Input Characteristics
10
1.0
10
Ta=25°C
Pulsed
I
D
=1.5A
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS
(Ω)
V
DS
=10V
Pulsed
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
1
2
3
4
5
6
7
I
D
=0.75A
V
GS
=0V
Pulsed
1
Ta=125°C
75°C
25°C
−25°C
SOURCE CURRENT : I
S
(A)
DRAIN CURRENT : I
D
(A)
1
Ta=125°C
75°C
25°C
−25°C
0.1
0.1
0.01
0.001
0.0
0.5
1.0
1.5
2.0
2.5
8
9
10
0.01
0.0
0.5
1.0
1.5
GATE-SOURCE VOLTAGE : V
GS
(V)
GATE-SOURCE VOLTAGE : V
GS
(V)
SOURCE-DRAIN VOLTAGE : V
SD
(V)
Fig.4 Typical Transfer Characteristics
Fig.5 Static Drain-Source
On-State Resistance vs.
Gate source Voltage
Fig.6 Source Current vs.
Source-Drain Voltage
10
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS (on)
(Ω)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS (on)
(Ω)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS (on)
(Ω)
V
GS
=4.5V
Pulsed
10
V
GS
=4.0V
Pulsed
10
V
GS
=2.5V
Pulsed
1
Ta=125°C
75°C
25°C
−25°C
1
Ta=125°C
75°C
25°C
−25°C
1
Ta=125°C
75°C
25°C
−25°C
0.1
0.01
0.1
1
10
0.1
0.01
0.1
1
10
0.1
0.01
0.1
1
10
DRAIN CURRENT : I
D
(A)
DRAIN CURRENT : I
D
(A)
DRAIN CURRENT : I
D
(A)
Fig.7 Static Drain-Source
On-State Resistance
vs. Drain Current (
Ι
)
Fig.8 Static Drain-Source
On-State Resistance
vs. Drain Current (
ΙΙ
)
Fig.9 Static Drain-Source
On-State Resistance
vs. Drain Current (
ΙΙΙ
)
Rev.B
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
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