2.5V Drive Nch + Nch MOSFET
UM6K31N
Structure
Silicon N-channel MOSFET
Features
1) High speed switing.
2) Small package(UMT6).
3) Low voltage drive(2.5V drive).
(1)
Dimensions
(Unit : mm)
UMT6
(SC-88)
<SOT-363>
(6)
(5)
(4)
(2)
(3)
Application
Switching
Abbreviated symbol : K31
Packaging
specifications
Package
Type
Code
Basic ordering unit (pieces)
UM6K31N
Inner
circuit
Taping
TN
3000
(6)
(5)
∗1
(4)
Absolute
maximum ratings
(Ta = 25C)
Symbol
Parameter
∗2
∗2
∗1
(1)
(2)
(3)
∗1
ESD PROTECTION DIODE
∗2
BODY DIODE
(1) Tr1 SOURCE
(2) Tr1 GATE
(3) Tr2 DRAIN
(4) Tr2 SOURCE
(5) Tr2 GATE
(6) Tr1 DRAIN
Limits
60
20
250
1
125
1
Unit
V
V
mA
A
mA
A
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body Diode)
Power dissipation
Channel temperature
Range of storage temperature
*1 Pw10s, Duty cycle1%
*2 Each terminal mounted on a recommended land.
V
DSS
V
GSS
Continuous
Pulsed
Continuous
Pulsed
I
D
I
DP
I
s
I
sp
P
D
Tch
Tstg
*1
*1
*2
150
mW / TOTAL
120
mW / ELEMENT
150
C
55
to +150
C
Thermal
resistance
Parameter
Symbol
Rth (ch-a)
*
Limits
833
1042
Unit
°C
/ W /TOTAL
°C
/ W /ELEMENT
Channel to ambient
* Each terminal mounted on a recommended land.
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2010 ROHM Co., Ltd. All rights reserved.
1/5
2010.04 - Rev.A
UM6K31N
Electrical
characteristics
(Ta = 25C)
<It is the same ratings for Tr1 and Tr2.>
Data Sheet
Parameter
Gate-source leakage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
*Pulsed
Symbol
I
GSS
I
DSS
V
GS (th)
*
R
DS (on)
Min.
-
60
-
1.0
-
-
-
-
0.25
-
-
-
-
-
-
-
Typ.
-
-
-
-
1.7
2.1
2.3
3.0
-
15
4.5
2.0
3.5
5
18
28
Max.
10
-
1
2.3
2.4
3.0
3.2
12.0
-
-
-
-
-
-
-
-
Unit
A
V
A
V
Conditions
V
GS
=20V, V
DS
=0V
I
D
=1mA, V
GS
=0V
V
DS
=60V, V
GS
=0V
V
DS
=10V, I
D
=1mA
I
D
=250mA, V
GS
=10V
I
D
=250mA, V
GS
=4.5V
I
D
=250mA, V
GS
=4.0V
I
D
=10mA, V
GS
=2.5V
I
D
=250mA, V
DS
=10V
V
DS
=25V
V
GS
=0V
f=1MHz
I
D
=100mA, V
DD
30V
V
GS
=10V
R
L
300
R
G
=10
Drain-source breakdown voltage V
(BR)DSS
l Y
fs
l*
C
iss
C
oss
C
rss
t
d(on)
*
t
r
*
t
d(off)
*
t
f
*
S
pF
pF
pF
ns
ns
ns
ns
Body
diode characteristics
(Source-Drain) (Ta = 25C)
<It is the same ratings for Tr1 and Tr2.>
Parameter
Forward voltage
*Pulsed
Symbol
V
SD
*
Min.
-
Typ.
-
Max.
1.2
Unit
V
Conditions
I
s
=250mA, V
GS
=0V
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2010 ROHM Co., Ltd. All rights reserved.
2/5
2010.04 - Rev.A
UM6K31N
Electrical
characteristic curves
0.5
Data Sheet
DRAIN CURRENT : I
D
[A]
DRAIN CURRENT : I
D
[A]
0.4
0.3
0.2
V
GS
= 2.8V
0.1
V
GS
= 2.5V
0
0
0.2
0.4
0.6
0.8
1
V
GS
= 10V
V
GS
= 4.5V
V
GS
= 4.0V
0.4
0.3
DRAIN CURRENT : I
D
[A]
Ta= 25C
Pulsed
0.5
V
GS
= 10V
V
GS
= 4.5V
V
GS
= 4.0V
Ta= 25C
Pulsed
1
V
DS
= 10V
Pulsed
Ta=125C
Ta=75C
Ta=25C
Ta= -25C
0.1
V
GS
= 2.8V
0.2
0.1
0
0
2
4
6
8
10
V
GS
= 2.5V
0.01
0.001
0.0001
0
1
2
3
GS
[V]
DRAIN-SOURCE VOLTAGE : V
DS
[V]
Fig.1 Typical Output Characteristics(Ⅰ)
DRAIN-SOURCE VOLTAGE : V
DS
[V]
Fig.2 Typical Output Characteristics(Ⅱ)
GATE-SOURCE VOLTAGE : V
Fig.3 Typical Transfer Characteristics
STATIC DRAIN-SOURCE ON-STATE
]
RESISTANCE : R
DS
(on)[
Ta= 25C
Pulsed
10
V
GS
= 2.5V
V
GS
= 4.0V
V
GS
= 4.5V
V
GS
= 10V
STATIC DRAIN-SOURCE ON-STATE
]
RESISTANCE : R
DS
(on)[
V
GS
= 10V
Pulsed
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(on)[
]
100
100
100
10
Ta=125C
Ta=75C
Ta=25C
Ta= -25C
V
GS
= 4.5V
Pulsed
10
Ta=125C
Ta=75C
Ta=25C
Ta= -25C
1
1
1
0.1
0.001
0.01
0.1
1
0.1
0.001
0.01
0.1
1
0.1
0.001
0.01
0.1
1
DRAIN-CURRENT : I
D
[A]
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅰ)
DRAIN-CURRENT : I
D
[A]
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅱ)
DRAIN-CURRENT : I
D
[A]
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅲ)
100
100
STATIC DRAIN-SOURCE ON-STATE
]
RESISTANCE : R
DS
(on)[
STATIC DRAIN-SOURCE ON-STATE
]
RESISTANCE : R
DS
(on)[
10
10
FORWARD TRANSFER
ADMITTANCE : |Yfs| [S]
V
GS
= 4.0V
Pulsed
Ta=125C
Ta=75C
Ta=25C
Ta= -25C
V
GS
= 2.5V
Pulsed
1
Ta=125C
Ta=75C
Ta=25C
Ta= -25C
V
DS
= 10V
Pulsed
0.1
1
1
Ta= -25C
Ta=25C
Ta=75C
Ta=125C
0.1
0.001
0.01
0.1
1
0.1
0.001
0.01
0.1
1
0.01
0.001
0.01
0.1
1
DRAIN-CURRENT : I
D
[A]
Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅳ)
DRAIN-CURRENT : I
D
[A]
Fig.8 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅳ)
DRAIN-CURRENT : I
D
[A]
Fig.9 Forward Transfer Admittance
vs. Drain Current
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2010 ROHM Co., Ltd. All rights reserved.
3/5
2010.04 - Rev.A
UM6K31N
1
8
1000
Data Sheet
REVERSE DRAIN CURRENT : Is [A]
SWITCHING TIME : t [ns]
V
GS
=0V
Pulsed
STATIC DRAIN-SOURCE ON-STATE
]
RESISTANCE : R
DS
(ON)[
Ta=25C
Pulsed
6
I
D
= 0.01A
4
I
D
= 0.25A
t
d(off)
t
f
100
Ta=25C
V
DD
= 30V
V
GS
=10V
R
G
=10
Pulsed
0.1
0.01
Ta=125C
Ta=75C
Ta=25C
Ta=-25C
10
2
t
d(on)
t
r
0.001
0
0.5
1
1.5
0
0
2.5
5
7.5
10
1
0.01
0.1
DRAIN-CURRENT : I
D
[A]
Fig.12 Switching Characteristics
1
SOURCE-DRAIN VOLTAGE : V
SD
[V]
Fig.10 Reverse Drain Current
vs. Sourse-Drain Voltage
GATE-SOURCE VOLTAGE : V
GS
[V]
Fig.11 Static Drain-Source On-State
Resistance vs. Gate Source Voltage
100
CAPACITANCE : C [pF]
Ta=25C
f=1MHz
V
GS
=0V
Ciss
10
Crss
Coss
1
0.01
0.1
1
10
100
DRAIN-SOURCE VOLTAGE : V
DS
[V]
Fig.13 Typical Capacitance
vs. Drain-Source Voltage
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2010 ROHM Co., Ltd. All rights reserved.
4/5
2010.04 - Rev.A
UM6K31N
Measurement
circuits
Data Sheet
Pulse width
V
GS
I
D
R
L
D.U.T.
R
G
V
DD
V
DS
V
GS
V
DS
50%
10%
10%
90%
t
d(on)
t
on
t
r
90%
50%
10%
90%
t
d(off)
t
off
t
f
Fig.1-1 Switching time measurement circuit
Fig.1-2 Switching waveforms
Notice
This product might cause chip aging and breakdown under the large electrified environment.
Please consider to design ESD protection circuit.
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c
○
2010 ROHM Co., Ltd. All rights reserved.
5/5
2010.04 - Rev.A
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