TSC742A
High Voltage NPN Transistor
TO-220
Pin Definition:
1. Base
2. Collector
3. Emitter
PRODUCT SUMMARY
BV
CEO
BV
CBO
I
C
V
CE(SAT)
400V
950V
4A
1.5V @ I
C
=35A, I
B
=0.1A
Features
●
●
High Voltage Capability
High Switching Speed
Block Diagram
Structure
●
●
Silicon Triple Diffused Type
NPN Silicon Transistor
Ordering Information
Part No.
TSC742ACZ C0
Package
TO-220
Packing
50pcs / Tube
Absolute Maximum Rating
(T
A
= 25
o
C unless otherwise noted)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage @ V
BE
=0V
Emitter-Base Voltage
Collector Current
Collector Peak Current (tp <5ms)
Base Current
Base Peak Current (tp <5ms)
Power Total Dissipation @ Tc=25ºC
Maximum Operating Junction Temperature
Storage Temperature Range
Note:
Single Pulse. P
W
= 300uS, Duty
≤2%
Symbol
V
CBO
V
CES
V
EBO
I
C
I
CM
I
B
I
BM
P
DTOT
T
J
T
STG
Limit
950V
400V
15
4
8
2
4
70
+150
-55 to +150
Unit
V
V
V
A
A
A
A
W
o
o
C
C
Thermal Performance
Parameter
Thermal Resistance - Junction to Case
Thermal Resistance - Junction to Ambient
Symbol
RӨ
JC
RӨ
JA
Limit
1.8
62.5
Unit
o
o
C/W
C/W
1/6
Version: A11
TSC742A
High Voltage NPN Transistor
Electrical Specifications
(T
A
= 25
o
C unless otherwise noted)
Parameter
Static
Collector-Base Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Gain
I
C
=0.5mA
I
C
=5mA
I
E
=1mA
V
CE
=400V, I
B
=0
V
CB
=950V, I
E
=0
I
C
=1A, I
B
=0.2A
I
C
=3.5A, I
B
=1A
I
C
=3.5A, I
B
=1A
V
CE
=5V, I
C
= 0.1A
V
CE
=5V, I
C
= 0.5A
V
CE
=3V, I
C
= 0.8A
Resistive Load Switching Time (Ratings)
Rise Time
Storage Time
V
CC
=125V, I
C
=2A,
I
B1
=-I
B2
=-0.4A,
t
r
t
STG
t
f
--
--
0.17
--
--
2
6
0.5
uS
uS
uS
h
FE
BV
CBO
BV
CEO
BV
EBO
I
CEO
I
CBO
V
CE(SAT)
1
V
CE(SAT)
2
V
BE(SAT)
1
950
400
15
--
--
---
---
--
35
35
25
--
--
--
--
--
--
--
--
--
--
--
--
--
--
10
10
0.5
1.5
1.5
100
--
50
V
V
V
uA
uA
V
V
V
Conditions
Symbol
Min
Typ
Max
Unit
t
P
=300uS, V
BE(OFF)
=-5V
Fall Time
Notes:
Pulsed duration =380uS, duty cycle
≤2%
2/6
Version: A11
TSC742A
High Voltage NPN Transistor
Electrical Characteristics Curve
(T
A
= 25
o
C, unless otherwise noted)
Figure 1. Static Characteristics
Figure 2. DC Current Gain
Figure 3. DC Current Gain
Figure 4. Power Derating
Figure 5. Collector-Emitter Saturation Voltage
Figure 6. Base-Emitter Saturation Voltage
3/6
Version: A11
TSC742A
High Voltage NPN Transistor
Electrical Characteristics Curve
(T
A
= 25
o
C, unless otherwise noted)
Figure 7. Reverse Bias SOA
Figure 8. Safety Operating Area
4/6
Version: A11
TSC742A
High Voltage NPN Transistor
TO-220 Mechanical Drawing
TO-220 DIMENSION
MILLIMETERS
INCHES
MIN
MAX
MIN
MAX
10.000
10.500
0.394
0.413
3.740
3.910
0.147
0.154
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
2.440
-
0.381
2.345
4.690
12.700
8.382
14.224
3.556
0.508
27.700
2.032
0.255
5.842
2.940
6.350
1.106
2.715
5.430
14.732
9.017
16.510
4.826
1.397
29.620
2.921
0.610
6.858
0.096
-
0.015
0.092
0.092
0.500
0.330
0.560
0.140
0.020
1.060
0.080
0.010
0.230
0.116
0.250
0.040
0.058
0.107
0.581
0.355
0.650
0.190
0.055
1.230
0.115
0.024
0.270
Marking Diagram
Y
= Year Code
M
= Month Code
(A=Jan,
B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug,
I=Sep, J=Oct, K=Nov, L=Dec)
= Month Code for Halogen Free Product
(O=Jan,
P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug,
W=Sep, X=Oct, Y=Nov, Z=Dec)
L
= Lot Code
5/6
Version: A11
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