TSC4505
High Voltage NPN Transistor
SOT-23
Pin Definition:
1. Base
2. Emitter
3. Collector
PRODUCT SUMMARY
BV
CEO
BV
CBO
I
C
V
CE(SAT)
400V
400V
300mA
0.1V @ I
C
/ I
B
= 10mA / 1mA
Features
●
●
Low V
CE(SAT)
0.15V @ I
C
/ I
B
= 10mA / 10mA (Typ.)
Complementary part with TSA1759
Ordering Information
Part No.
TSC4505CX RF
TSC4505CX RFG
Package
SOT-23
SOT-23
Packing
3Kpcs / 7” Reel
3Kpcs / 7” Reel
Structure
●
●
Epitaxial Planar Type
NPN Silicon Transistor
Note:
“G” denotes Halogen Free Product.
Absolute Maximum Rating
(T
A
= 25
o
C unless otherwise noted)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
SOT-23
Operating Junction Temperature
Operating Junction and Storage Temperature Range
Note:
Single pulse, Pw=20ms, Duty≤50%
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
D
T
J
T
STG
Limit
400
400
6
300
0.225
+150
- 55 to +150
Unit
V
V
V
mA
W
o
o
C
C
Electrical Specifications
(T
A
= 25
o
C unless otherwise noted)
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector-Emitter Reverse Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Transfer Ratio
Transition Frequency
Output Capacitance
Conditions
I
C
= 50uA, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 50uA, I
C
= 0
V
CB
= 400V, I
E
= 0
V
CE
= 300V, R
EB
= 4kΩ
V
EB
= 6V, I
C
= 0
I
C
/ I
B
= 10mA / 1mA
I
C
/ I
B
= 10mA / 1mA
V
CE
= 10V, I
C
= 10mA
V
CE
=10V, I
C
=-10mA,
f=10MHz
V
CB
= 10V, I
E
= 0, f=1MHz
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
CER
I
EBO
V
CE(SAT)
V
BE(SAT)
h
FE
f
T
Cob
Min
400
400
6
--
--
--
--
--
100
--
--
Typ
--
--
--
--
--
--
0.1
--
--
20
7
Max
--
--
--
10
20
10
0.5
1.5
270
--
--
Unit
V
V
V
uA
nA
uA
V
V
MHz
pF
1/4
Version: B11
TSC4505
High Voltage NPN Transistor
Electrical Characteristics Curve
(T
A
= 25
o
C, unless otherwise noted)
Figure 1. DC Current Gain
Figure 2. V
CE(SAT)
v.s. Ic
Figure 3. V
BE(SAT)
v.s. Ic
Figure 4. Power Derating Curve
2/4
Version: B11
TSC4505
High Voltage NPN Transistor
SOT-23 Mechanical Drawing
DIM
A
A1
B
C
D
E
F
G
H
I
SOT-23 DIMENSION
MILLIMETERS
INCHES
MIN
MAX
MIN
MAX.
1.00 BSC
0.039 BSC
2.00 BSC
0.079 BSC
2.10
2.75
0.083
0.108
0.063
1.20
1.60
0.047
2.80
3.04
0.110
0.120
0.051
0.89
1.30
0.035
0.01
0.10
0.000
0.004
0.020
0.30
0.50
0.012
0.007
0.08
0.18
0.003
0.024
0.30
0.60
0.012
3/4
Version: B11
TSC4505
High Voltage NPN Transistor
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
4/4
Version: B11
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