TSC236
High Voltage NPN Transistor
TO-220
ITO-220
Pin Definition:
1. Base
2. Collector
3. Emitter
PRODUCT SUMMARY
BV
CEO
BV
CBO
I
C
V
CE(SAT)
400V
700V
4A
1.3V @ I
C
/ I
B
= 2.5A / 0.6A
Features
●
●
High Voltage
High Speed Switching
Block Diagram
Structure
●
●
Silicon Triple Diffused Type
NPN Silicon Transistor
Ordering Information
Part No.
TSC236CZ C0
TSC236CI C0
Package
TO-220
ITO-220
Packing
50pcs / Tube
50pcs / Tube
Absolute Maximum Rating
(Ta = 25
o
C unless otherwise noted)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Total Power Dissipation
Operating Junction Temperature
Operating Junction and Storage Temperature Range
Note: Single Pulse. P
W
= 300uS, Duty
≤2%
DC
Pulse
DC
Pulse
TO-220
ITO-220
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
tot
T
J
T
STG
Limit
700V
400V
9
4
8
2
4
75
30
+150
- 55 to +150
Unit
V
V
V
A
A
W
o
o
C
C
1/6
Version: A07
TSC236
High Voltage NPN Transistor
Electrical Specifications
(Ta = 25
o
C unless otherwise noted)
Parameter
Static
Collector-Base Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Gain
Dynamic
Frequency
Output Capacitance
V
CE
=10V, I
C
=0.5A
V
CB
=10V, f =0.1MHz
V
CC
=125V, I
C
=2A,
I
B1
=I
B2
=0.4A, t
P
=25uS
Duty Cycle
≤1%
f
T
Cob
t
ON
t
STG
t
f
4
--
--
--
--
--
65
0.2
2.2
0.2
--
--
0.5
3
0.5
MHz
pF
uS
uS
uS
I
C
=1mA, I
B
=0
I
C
=10mA, I
E
=0
I
E
=0.1mA, I
C
=0
V
CE
=400V, I
B
=0
V
CB
=700V, I
E
=0
V
EB
= 9V, I
C
=0
I
C
=0.8A, I
B
=0.1A
I
C
=2.5A, I
B
=0.6A
I
C
=1A, I
B
=0.2A
I
C
=2.5A, I
B
=0.5A
V
CE
=5V, I
C
= 10mA
V
CE
=5V, I
C
= 2.5A
BV
CBO
BV
CEO
BV
EBO
I
CEO
I
CBO
I
EBO
V
CE(SAT)1
V
CE(SAT)2
V
BE(SAT)1
V
BE(SAT)2
h
FE
700
400
9
--
--
--
--
--
--
--
15
8
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
250
1
1
1.1
1.3
1.2
1.3
32
28
V
V
V
uA
mA
mA
V
V
Conditions
Symbol
Min
Typ
Max
Unit
Resistive Load
Turn On Time
Storage Time
Fall Time
Note: pulse test: pulse width
≤
300uS, duty cycle
≤
2%
2/6
Version: A07
TSC236
High Voltage NPN Transistor
Electrical Characteristics Curve
(Ta = 25
o
C, unless otherwise noted)
Figure 1. Static Characteristics
Figure 2. DC Current Gain
Figure 3. V
CE(SAT)
v.s. V
BE(SAT
Figure 4. Power Derating
Figure 5. Reverse Bias SOA
Figure 6. Safety Operating Area
3/6
Version: A07
TSC236
High Voltage NPN Transistor
TO-220 Mechanical Drawing
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
TO-220 DIMENSION
MILLIMETERS
INCHES
MIN
MAX
MIN
MAX
9.31
10.550
0.366
0.415
3.740
3.910
0.147
0.154
2.440
2.940
0.096
0.116
2.22
3.22
0.087
0.127
0.78
0.98
0.030
0.038
2.34
2.65
0.092
0.104
4.69
5.31
0.184
0.209
12.32
13.88
0.485
0.546
8.74
9.26
0.344
0.364
15.07
16.07
0.593
0.632
4.35
4.65
0.171
0.183
1.16
1.40
0.045
0.055
27.39
30.35
1.078
1.194
1.785
2.675
0.070
0.105
1.50
1.75
0.059
0.068
5.75
7.65
0.226
0.301
Marking Diagram
Y
M
= Year Code
= Month Code
(A=Jan,
B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep,
J=Oct, K=Nov, L=Dec)
= Lot Code
L
4/6
Version: A07
TSC236
High Voltage NPN Transistor
ITO-220 Mechanical Drawing
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
ITO-220 DIMENSION
MILLIMETERS
INCHES
MIN
MAX
MIN
MAX
9.96
10.36
0.392
0.407
6.20 (typ.)
0.244 (typ.)
2.20 (typ.)
0.087 (typ.)
1.40 (typ.)
0.055 (typ.)
15.07
16.07
0.593
0.632
0.80 (typ.)
0.031 (typ.)
2.44
2.64
0.096
0.104
13.08
13.48
0.514
0.530
1.47 (max.)
0.057 (max.)
3.20
3.40
0.125
0.133
4.60
4.80
0.181
0.188
1.15 (typ.)
0.045 (typ.)
2.44
2.64
0.096
0.104
2.60
2.80
0.102
0.110
6.55
6.65
0.258
0.262
Marking Diagram
Y
M
= Year Code
= Month Code
(A=Jan,
B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep,
J=Oct, K=Nov, L=Dec)
= Lot Code
L
5/6
Version: A07
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